Christopher Joseph Waskiewicz

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned top contact for vertical transistor
- Patent number 12,009,422
- Issue date Jun 11, 2024
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via interconnects including super vias
- Patent number 11,916,013
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-resistance top contact on VTFET
- Patent number 11,908,923
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for self-aligned contact rail formation
- Patent number 11,901,440
- Issue date Feb 13, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal film thickness determination using angled geometric featu...
- Patent number 11,876,023
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having an oxygen-blocking layer
- Patent number 11,876,124
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate N/P boundary control by active gate cut and recess
- Patent number 11,742,350
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top epitaxial layer and contact for VTFET
- Patent number 11,742,354
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local isolation of source/drain for reducing parasitic capacitance...
- Patent number 11,742,246
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,646,358
- Issue date May 9, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom spacer
- Patent number 11,646,373
- Issue date May 9, 2023
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully aligned via for interconnect
- Patent number 11,495,538
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having an oxygen-blocking top spacer
- Patent number 11,476,346
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically-passive magnetic signature and identification feature wit...
- Patent number 11,351,811
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Michael Rizzolo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,316,029
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Load leveler
- Patent number 11,263,059
- Issue date Mar 1, 2022
- International Business Machines Corporation
- Jonathan Fry
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and structure for forming fully-aligned via
- Patent number 11,244,861
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interconnect structure with enhanced corner co...
- Patent number 11,239,165
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom spacer
- Patent number 11,217,692
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via formation with robust hardmask removal
- Patent number 11,211,291
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective source/drain recess for improved performance, isolation,...
- Patent number 11,205,723
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Ardasheir Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts and liners having multi-segmented protective caps
- Patent number 11,171,051
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Jennifer Fullam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local isolation of source/drain for reducing parasitic capacitance...
- Patent number 11,152,265
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smart display apparatus and control system
- Patent number 11,113,533
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Marc A. Bergendahl
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Blockchain stochastic timer transaction synchronization
- Patent number 11,005,646
- Issue date May 11, 2021
- International Business Machines Corporation
- Jonathan Fry
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fin cut profile using fin base liner
- Patent number 10,985,025
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Eric R. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having straight bottom spacers
- Patent number 10,943,992
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around-contact structure for top source/drain in vertical FETS
- Patent number 10,892,336
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack reliability in vertical transport field effect transistors
- Patent number 10,833,172
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER
- Publication number 20240203904
- Publication date Jun 20, 2024
- International Business Machines Corporation
- FEE LI LIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICE WITHOUT DIELECTRIC INNER SPACER
- Publication number 20240186391
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL FILM THICKNESS DETERMINATION USING ANGLED GEOMETRIC FEATU...
- Publication number 20230197531
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION
- Publication number 20230187442
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR
- Publication number 20230144407
- Publication date May 11, 2023
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Late Gate Extension
- Publication number 20230139379
- Publication date May 4, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING TWO-DIMENSIONAL CHANNEL
- Publication number 20230105783
- Publication date Apr 6, 2023
- International Business Machines Corporation
- ANDREW GAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HARD MASK REMOVAL WITHOUT DAMAGING TOP EPITAXIAL LAYER
- Publication number 20230095956
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP EPITAXIAL LAYER AND CONTACT FOR VTFET
- Publication number 20230086681
- Publication date Mar 23, 2023
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PLANAR FIELD EFFECT TRANSISTORS WITH 2D MATERIAL CHANNELS
- Publication number 20230093343
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE N/P BOUNDARY CONTROL BY ACTIVE GATE CUT AND RECESS
- Publication number 20230086785
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR SELF-ALIGNED CONTACT RAIL FORMATION
- Publication number 20230064608
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA INTERCONNECTS INCLUDING SUPER VIAS
- Publication number 20230065078
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING LAYER
- Publication number 20220336627
- Publication date Oct 20, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20220262923
- Publication date Aug 18, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER
- Publication number 20220059696
- Publication date Feb 24, 2022
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...
- Publication number 20220037210
- Publication date Feb 3, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Aligned Via for Interconnect
- Publication number 20220020688
- Publication date Jan 20, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING TOP SPACER
- Publication number 20210408261
- Publication date Dec 30, 2021
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY-PASSIVE MAGNETIC SIGNATURE AND IDENTIFICATION FEATURE WIT...
- Publication number 20210370705
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Michael Rizzolo
- B42 - BOOKBINDING ALBUMS FILES SPECIAL PRINTED MATTER
Information Patent Application
CONTACTS AND LINERS HAVING MULTI-SEGMENTED PROTECTIVE CAPS
- Publication number 20210351073
- Publication date Nov 11, 2021
- International Business Machines Corporation
- Jennifer Fullam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING FULLY-ALIGNED VIA
- Publication number 20210327756
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20210328041
- Publication date Oct 21, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA FORMATION WITH ROBUST HARDMASK REMOVAL
- Publication number 20210313229
- Publication date Oct 7, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE WITH ENHANCED CORNER CONNECTION
- Publication number 20210287988
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER
- Publication number 20210217889
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...
- Publication number 20210035867
- Publication date Feb 4, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE TOP CONTACT ON VTFET
- Publication number 20210005735
- Publication date Jan 7, 2021
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SOURCE/DRAIN RECESS FOR IMPROVED PERFORMANCE, ISOLATION,...
- Publication number 20200411682
- Publication date Dec 31, 2020
- International Business Machines Corporation
- Ardasheir Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING STRAIGHT BOTTOM SPACERS
- Publication number 20200357894
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Christopher Joseph Waskiewicz

Person

Patents Grantslast 30 patents

Semiconductor structure having two-dimensional channel

Self aligned top contact for vertical transistor

Via interconnects including super vias

Low-resistance top contact on VTFET

Sacrificial fin for self-aligned contact rail formation

Conformal film thickness determination using angled geometric featu...

Vertical transistor having an oxygen-blocking layer

Metal gate N/P boundary control by active gate cut and recess

Top epitaxial layer and contact for VTFET

Local isolation of source/drain for reducing parasitic capacitance...

Sacrificial fin for contact self-alignment

Vertical field effect transistor with bottom spacer

Fully aligned via for interconnect

Vertical transistor having an oxygen-blocking top spacer

Optically-passive magnetic signature and identification feature wit...

Sacrificial fin for contact self-alignment

Load leveler

Method and structure for forming fully-aligned via

Method of forming an interconnect structure with enhanced corner co...

Vertical field effect transistor with bottom spacer

Via formation with robust hardmask removal

Selective source/drain recess for improved performance, isolation,...

Contacts and liners having multi-segmented protective caps

Local isolation of source/drain for reducing parasitic capacitance...

Smart display apparatus and control system

Blockchain stochastic timer transaction synchronization

Fin cut profile using fin base liner

Transistor having straight bottom spacers

Wrap-around-contact structure for top source/drain in vertical FETS

Gate stack reliability in vertical transport field effect transistors

Patents Applicationslast 30 patents

STRESS MODULATING PATTERN CONTAINING BONDING DIELECTRIC LAYER

GATE-ALL-AROUND DEVICE WITHOUT DIELECTRIC INNER SPACER

CONFORMAL FILM THICKNESS DETERMINATION USING ANGLED GEOMETRIC FEATU...

VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION

SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR

Late Gate Extension

SEMICONDUCTOR STRUCTURE HAVING TWO-DIMENSIONAL CHANNEL

HARD MASK REMOVAL WITHOUT DAMAGING TOP EPITAXIAL LAYER

TOP EPITAXIAL LAYER AND CONTACT FOR VTFET

STACKED PLANAR FIELD EFFECT TRANSISTORS WITH 2D MATERIAL CHANNELS

METAL GATE N/P BOUNDARY CONTROL BY ACTIVE GATE CUT AND RECESS

SACRIFICIAL FIN FOR SELF-ALIGNED CONTACT RAIL FORMATION

VIA INTERCONNECTS INCLUDING SUPER VIAS

VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING LAYER

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER

LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...

Fully Aligned Via for Interconnect

VERTICAL TRANSISTOR HAVING AN OXYGEN-BLOCKING TOP SPACER

OPTICALLY-PASSIVE MAGNETIC SIGNATURE AND IDENTIFICATION FEATURE WIT...

CONTACTS AND LINERS HAVING MULTI-SEGMENTED PROTECTIVE CAPS

METHOD AND STRUCTURE FOR FORMING FULLY-ALIGNED VIA

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

VIA FORMATION WITH ROBUST HARDMASK REMOVAL

INTERCONNECT STRUCTURE WITH ENHANCED CORNER CONNECTION

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER

LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...

LOW-RESISTANCE TOP CONTACT ON VTFET

SELECTIVE SOURCE/DRAIN RECESS FOR IMPROVED PERFORMANCE, ISOLATION,...

TRANSISTOR HAVING STRAIGHT BOTTOM SPACERS