Christopher Lawrence Rexer

Person

Mountain Top, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Superjunction structures for power devices
- Patent number 9,595,596
- Issue date Mar 14, 2017
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction structures for power devices
- Patent number 8,928,077
- Issue date Jan 6, 2015
- Fairchild Semiconductor Corporation
- JaeGil Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction structures for power devices and methods of manufacture
- Patent number 8,786,010
- Issue date Jul 22, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density FET with integrated Schottky
- Patent number 8,686,493
- Issue date Apr 1, 2014
- Fairchild Semiconductor Corporation
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and schottky diode structures
- Patent number 8,680,611
- Issue date Mar 25, 2014
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure related to a thick bottom dielectric (TBD) for trench-gat...
- Patent number 8,669,623
- Issue date Mar 11, 2014
- Fairchild Semiconductor Corporation
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double layer metal (DLM) power MOSFET
- Patent number 8,502,313
- Issue date Aug 6, 2013
- Fairchild Semiconductor Corporation
- Rohit Dikshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET with reduced on-resistance
- Patent number 8,362,550
- Issue date Jan 29, 2013
- Fairchild Semiconductor Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap device in parallel with a device that has a lower aval...
- Patent number 8,357,976
- Issue date Jan 22, 2013
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rugged semiconductor device architecture
- Patent number 8,124,981
- Issue date Feb 28, 2012
- Fairchild Semiconductor Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap device in parallel with a device that has a lower aval...
- Patent number 7,859,057
- Issue date Dec 28, 2010
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap device in parallel with a device that has a lower aval...
- Patent number 7,586,156
- Issue date Sep 8, 2009
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench gate field effect transistor with recessed...
- Patent number 7,504,306
- Issue date Mar 17, 2009
- Fairchild Semiconductor Corporation
- Steven Sapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a MOS-gated semiconductor device with a single dif...
- Patent number 6,080,614
- Issue date Jun 27, 2000
- John Manning Sauidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating UMOS semiconductor devices using a self-align...
- Patent number 5,940,689
- Issue date Aug 17, 1999
- Harris Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS-gated semiconductor devices
- Patent number 5,877,044
- Issue date Mar 2, 1999
- Harris Corporation
- John Manning Savidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping a JFET region in a MOS-gated semiconductor device
- Patent number 5,422,288
- Issue date Jun 6, 1995
- Harris Corporation
- John M. S. Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power FET with gate segments covering drain regions disposed in a h...
- Patent number 5,323,036
- Issue date Jun 21, 1994
- Harris Corporation
- John M. S. Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for improving current carrying capability in a se...
- Patent number 5,317,184
- Issue date May 31, 1994
- Harris Corporation
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE
- Publication number 20150187873
- Publication date Jul 2, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE
- Publication number 20150069567
- Publication date Mar 12, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
- Publication number 20140203355
- Publication date Jul 24, 2014
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
- Publication number 20120319197
- Publication date Dec 20, 2012
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Structures for Power Devices and Methods of Manufacture
- Publication number 20120273884
- Publication date Nov 1, 2012
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Structures for Power Devices and Methods of Manufacture
- Publication number 20120273871
- Publication date Nov 1, 2012
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Structures for Power Devices and Methods of Manufacture
- Publication number 20120273916
- Publication date Nov 1, 2012
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE LAYER METAL (DLM) POWER MOSFET
- Publication number 20120267714
- Publication date Oct 25, 2012
- Rohit Dikshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Trench Power MOSFET With Reduced On-Resistance
- Publication number 20120187474
- Publication date Jul 26, 2012
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE
- Publication number 20120156845
- Publication date Jun 21, 2012
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...
- Publication number 20110089432
- Publication date Apr 21, 2011
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Forming a Thick Bottom Dielectric (TBD) fo...
- Publication number 20100320534
- Publication date Dec 23, 2010
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...
- Publication number 20090315040
- Publication date Dec 24, 2009
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Forming a Thick Bottom Dielectric (TBD) fo...
- Publication number 20090315083
- Publication date Dec 24, 2009
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE
- Publication number 20090302327
- Publication date Dec 10, 2009
- Christopher L. Rexer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Trench Gate Field Effect Transistor with Recesse...
- Publication number 20090111227
- Publication date Apr 30, 2009
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY FET WITH INTEGRATED SCHOTTKY
- Publication number 20090090966
- Publication date Apr 9, 2009
- PAUL THORUP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched Shield Gate Power Semiconductor Devices and Methods of Man...
- Publication number 20080150020
- Publication date Jun 26, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power Semiconductor Devices Having Termination Structures and Metho...
- Publication number 20080135931
- Publication date Jun 12, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
AVALANCHE PROTECTION FOR WIDE BANDGAP DEVICES
- Publication number 20080042143
- Publication date Feb 21, 2008
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched-gate field effect transistors and methods of forming the same
- Publication number 20060267090
- Publication date Nov 30, 2006
- Steven Sapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214221
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214222
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Optimized trench power MOSFET with integrated schottky diode
- Publication number 20050199918
- Publication date Sep 15, 2005
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20050167742
- Publication date Aug 4, 2005
- Fairchild Semiconductor Corp.
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Christopher Lawrence Rexer

Person

Patents Grantslast 30 patents

Superjunction structures for power devices

Superjunction structures for power devices

Superjunction structures for power devices and methods of manufacture

High density FET with integrated Schottky

Field effect transistor and schottky diode structures

Structure related to a thick bottom dielectric (TBD) for trench-gat...

Double layer metal (DLM) power MOSFET

Trench power MOSFET with reduced on-resistance

Wide bandgap device in parallel with a device that has a lower aval...

Rugged semiconductor device architecture

Wide bandgap device in parallel with a device that has a lower aval...

Wide bandgap device in parallel with a device that has a lower aval...

Method of forming trench gate field effect transistor with recessed...

Method of making a MOS-gated semiconductor device with a single dif...

Method of fabricating UMOS semiconductor devices using a self-align...

Method of making MOS-gated semiconductor devices

Method of doping a JFET region in a MOS-gated semiconductor device

Power FET with gate segments covering drain regions disposed in a h...

Device and method for improving current carrying capability in a se...

Patents Applicationslast 30 patents

SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE

SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE

FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

Superjunction Structures for Power Devices and Methods of Manufacture

Superjunction Structures for Power Devices and Methods of Manufacture

Superjunction Structures for Power Devices and Methods of Manufacture

DOUBLE LAYER METAL (DLM) POWER MOSFET

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

Trench Power MOSFET With Reduced On-Resistance

METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE

WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...

Structure and Method for Forming a Thick Bottom Dielectric (TBD) fo...

WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVAL...

Structure and Method for Forming a Thick Bottom Dielectric (TBD) fo...

RUGGED SEMICONDUCTOR DEVICE ARCHITECTURE

Method for Forming Trench Gate Field Effect Transistor with Recesse...

HIGH DENSITY FET WITH INTEGRATED SCHOTTKY

Trenched Shield Gate Power Semiconductor Devices and Methods of Man...

Power Semiconductor Devices Having Termination Structures and Metho...

AVALANCHE PROTECTION FOR WIDE BANDGAP DEVICES

Trenched-gate field effect transistors and methods of forming the same

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Optimized trench power MOSFET with integrated schottky diode

Power semiconductor devices and methods of manufacture