Christopher P. D'Emic

Person

Ossining, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor-on-insulator lateral heterojunction bipolar transisto...
- Patent number 10,236,366
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integration of III-N material on silicon
- Patent number 10,056,251
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator lateral heterojunction bipolar transisto...
- Patent number 9,887,278
- Issue date Feb 6, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...
- Patent number 9,691,886
- Issue date Jun 27, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,660,069
- Issue date May 23, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...
- Patent number 9,647,099
- Issue date May 9, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-integration of III-N material on silicon
- Patent number 9,601,583
- Issue date Mar 21, 2017
- Armonk Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,564,526
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,362,281
- Issue date Jun 7, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride integration with CMOS technology
- Patent number 9,331,076
- Issue date May 3, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor-based bio-sensor
- Patent number 9,110,014
- Issue date Aug 18, 2015
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Grant
Determination of isoelectric points of biomolecules using capacitiv...
- Patent number 9,103,770
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Grant
Field effect transistor-based bio-sensor
- Patent number 8,999,739
- Issue date Apr 7, 2015
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Grant
Field effect transistor-based bio sensor
- Patent number 8,994,077
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Grant
Determination of isoelectric points of biomolecules using capacitiv...
- Patent number 8,917,096
- Issue date Dec 23, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Grant
FET nanopore sensor
- Patent number 8,828,138
- Issue date Sep 9, 2014
- International Business Machines Corporation
- Stephen W. Bedell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Germanium lateral bipolar junction transistor
- Patent number 8,586,441
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of replacing silicon with metal in integrated circuit chip f...
- Patent number 8,580,635
- Issue date Nov 12, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium lateral bipolar junction transistor
- Patent number 8,558,282
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral bipolar junction transistor having a wide band gap emit...
- Patent number 8,557,670
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal/high-κ gate stacks with high mobility
- Patent number 8,153,514
- Issue date Apr 10, 2012
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) gate stack with high...
- Patent number 7,169,674
- Issue date Jan 30, 2007
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal/high-k gate stacks with high mobility
- Patent number 7,115,959
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrided ultra thin gate dielectrics
- Patent number 7,109,559
- Issue date Sep 19, 2006
- International Business Machines Corporation
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin germanium oxynitride gate dielectric for germanium-based devices
- Patent number 7,078,300
- Issue date Jul 18, 2006
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved plasma nitridation of ultra thin gate dielectrics
- Patent number 6,893,979
- Issue date May 17, 2005
- International Business Machines Corporation
- Mukesh V. Khare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) gate stack with high...
- Patent number 6,891,231
- Issue date May 10, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of passivating a metal-gated complementary metal oxide semi...
- Patent number 6,770,500
- Issue date Aug 3, 2004
- International Business Machines Corporation
- Alessandro Cesare Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming heavy nitrogen-doped ultra thin oxynitride gate...
- Patent number 6,642,156
- Issue date Nov 4, 2003
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of strained Si/SiGe on insulator by hydrogen induced la...
- Patent number 6,524,935
- Issue date Feb 25, 2003
- International Business Machines Corporation
- Donald F. Canaperi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
- Publication number 20180315591
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...
- Publication number 20180108763
- Publication date Apr 19, 2018
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...
- Publication number 20170092749
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
- Publication number 20170092483
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...
- Publication number 20160300935
- Publication date Oct 13, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...
- Publication number 20160300934
- Publication date Oct 13, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20160284832
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20160233244
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR WITH BASE EXTENSION REGION
- Publication number 20160087068
- Publication date Mar 24, 2016
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
- Publication number 20160020283
- Publication date Jan 21, 2016
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20150318283
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY
- Publication number 20150318276
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Can Bayram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR-BASED BIO-SENSOR
- Publication number 20150137191
- Publication date May 21, 2015
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Application
THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES
- Publication number 20150014752
- Publication date Jan 15, 2015
- International Business Machines Corporation
- CHRISTOPHER P. D'EMIC
- G01 - MEASURING TESTING
Information Patent Application
FET Nanopore Sensor
- Publication number 20140327446
- Publication date Nov 6, 2014
- Stephen W. Bedell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Field Effect Transistor-Based Bio Sensor
- Publication number 20140175522
- Publication date Jun 26, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Application
Field Effect Transistor-Based Bio-Sensor
- Publication number 20140179047
- Publication date Jun 26, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Application
DETERMINATION OF ISOELECTRIC POINTS OF BIOMOLECULES USING CAPACITIV...
- Publication number 20140132275
- Publication date May 15, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Application
DETERMINATION OF ISOELECTRIC POINTS OF BIOMOLECULES USING CAPACITIV...
- Publication number 20140132276
- Publication date May 15, 2014
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...
- Publication number 20140015051
- Publication date Jan 16, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...
- Publication number 20130256757
- Publication date Oct 3, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...
- Publication number 20130260526
- Publication date Oct 3, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...
- Publication number 20130140634
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...
- Publication number 20130049199
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...
- Publication number 20130049200
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET Nanopore Sensor
- Publication number 20110279125
- Publication date Nov 17, 2011
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
- Publication number 20080293259
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device structures (gate stacks) with charge compositions
- Publication number 20080017936
- Publication date Jan 24, 2008
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20060289903
- Publication date Dec 28, 2006
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin germanium oxynitride gate dielectric for germanium-based devices
- Publication number 20060202279
- Publication date Sep 14, 2006
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS

Christopher P. D'Emic

Person

Patents Grantslast 30 patents

Semiconductor-on-insulator lateral heterojunction bipolar transisto...

Hetero-integration of III-N material on silicon

Semiconductor-on-insulator lateral heterojunction bipolar transisto...

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...

Group III nitride integration with CMOS technology

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar tra...

Hetero-integration of III-N material on silicon

Group III nitride integration with CMOS technology

Group III nitride integration with CMOS technology

Group III nitride integration with CMOS technology

Field effect transistor-based bio-sensor

Determination of isoelectric points of biomolecules using capacitiv...

Field effect transistor-based bio-sensor

Field effect transistor-based bio sensor

Determination of isoelectric points of biomolecules using capacitiv...

FET nanopore sensor

Germanium lateral bipolar junction transistor

Method of replacing silicon with metal in integrated circuit chip f...

Germanium lateral bipolar junction transistor

SOI lateral bipolar junction transistor having a wide band gap emit...

Method of forming metal/high-κ gate stacks with high mobility

Complementary metal oxide semiconductor (CMOS) gate stack with high...

Method of forming metal/high-k gate stacks with high mobility

Nitrided ultra thin gate dielectrics

Thin germanium oxynitride gate dielectric for germanium-based devices

Method for improved plasma nitridation of ultra thin gate dielectrics

Complementary metal oxide semiconductor (CMOS) gate stack with high...

Process of passivating a metal-gated complementary metal oxide semi...

Method for forming heavy nitrogen-doped ultra thin oxynitride gate...

Preparation of strained Si/SiGe on insulator by hydrogen induced la...

Patents Applicationslast 30 patents

HETERO-INTEGRATION OF III-N MATERIAL ON SILICON

SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...

SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTO...

HETERO-INTEGRATION OF III-N MATERIAL ON SILICON

SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...

SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRA...

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

LATERAL BIPOLAR TRANSISTOR WITH BASE EXTENSION REGION

HETERO-INTEGRATION OF III-N MATERIAL ON SILICON

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY

FIELD EFFECT TRANSISTOR-BASED BIO-SENSOR

THIN BODY FET NANOPORE SENSOR FOR SENSING AND SCREENING BIOMOLECULES

FET Nanopore Sensor

Field Effect Transistor-Based Bio Sensor

Field Effect Transistor-Based Bio-Sensor

DETERMINATION OF ISOELECTRIC POINTS OF BIOMOLECULES USING CAPACITIV...

DETERMINATION OF ISOELECTRIC POINTS OF BIOMOLECULES USING CAPACITIV...

METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...

SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...

SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...

METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...

FET Nanopore Sensor

METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY

Semiconductor device structures (gate stacks) with charge compositions

Method of forming metal/high-k gate stacks with high mobility

Thin germanium oxynitride gate dielectric for germanium-based devices