Christopher P. Dragon

Person

Tempe, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral insulated-gate bipolar transistor and method therefor
- Patent number 10,892,361
- Issue date Jan 12, 2021
- NXP USA, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated-gate bipolar transistor and method therefor
- Patent number 10,593,796
- Issue date Mar 17, 2020
- NXP USA, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with floating field plates
- Patent number 9,818,862
- Issue date Nov 14, 2017
- NXP USA, INC.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF power transistor device with metal electromigration design and m...
- Patent number 7,525,152
- Issue date Apr 28, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Christopher P. Dragon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency semiconductor device and method of manufacture
- Patent number 6,744,117
- Issue date Jun 1, 2004
- Motorola, Inc.
- Christopher P. Dragon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method of manufacture
- Patent number 6,020,611
- Issue date Feb 1, 2000
- Motorola, Inc.
- Gordon C. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic high frequency integrated circuit structure having a gro...
- Patent number 5,578,860
- Issue date Nov 26, 1996
- Motorola, Inc.
- Julio C. Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated well and method of making
- Patent number 5,394,007
- Issue date Feb 28, 1995
- Motorola, Inc.
- Robert H. Reuss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolated wells in the fabrication of BiCMOS devices
- Patent number 5,268,312
- Issue date Dec 7, 1993
- Motorola, Inc.
- Robert H. Reuss
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD THEREFOR
- Publication number 20200152787
- Publication date May 14, 2020
- NXP USA, Inc.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD THEREFOR
- Publication number 20190181262
- Publication date Jun 13, 2019
- NXP USA, Inc.
- Zihao M. Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Floating Field Plates
- Publication number 20170194488
- Publication date Jul 6, 2017
- FREESCALE SEMICONDUCTOR, INC.
- ZIHAO M. GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND M...
- Publication number 20070205506
- Publication date Sep 6, 2007
- Christopher P. Dragon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High frequency semiconductor device and method of manufacture
- Publication number 20030160324
- Publication date Aug 28, 2003
- Christopher P. Dragon
- H01 - BASIC ELECTRIC ELEMENTS

Christopher P. Dragon

Person

Patents Grantslast 30 patents

Lateral insulated-gate bipolar transistor and method therefor

Lateral insulated-gate bipolar transistor and method therefor

Semiconductor device with floating field plates

RF power transistor device with metal electromigration design and m...

High frequency semiconductor device and method of manufacture

Semiconductor component and method of manufacture

Monolithic high frequency integrated circuit structure having a gro...

Isolated well and method of making

Method of forming isolated wells in the fabrication of BiCMOS devices

Patents Applicationslast 30 patents

LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD THEREFOR

LATERAL INSULATED-GATE BIPOLAR TRANSISTOR AND METHOD THEREFOR

Semiconductor Device with Floating Field Plates

RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND M...

High frequency semiconductor device and method of manufacture