Chu-Mei Lee

Person

Chu-Dung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin isolation structure for FinFET and method of forming the same
- Patent number 11,942,373
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu-An Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with oxidized ruthenium
- Patent number 11,756,825
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shen-Nan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin isolation structure for FinFET and method of forming the same
- Patent number 11,688,644
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu-An Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin isolation structure for FinFET and method of forming the same
- Patent number 10,998,239
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chu-An Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer polishing with separated chemical reaction and mechanical pol...
- Patent number 10,964,549
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Shen-Nan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium-containing semiconductor structure and method of manufact...
- Patent number 10,847,410
- Issue date Nov 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shen-Nan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Slurry and manufacturing semiconductor using the slurry
- Patent number 10,727,076
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Hung Liao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fin isolation structure for FinFET and method of forming the same
- Patent number 10,714,395
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chu-An Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive endpoint method for pad life effect on chemical mechanical...
- Patent number 9,333,619
- Issue date May 10, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-An Lee
- B24 - GRINDING POLISHING
Information Patent Grant
Photoresist mask-free oxide define region (ODR)
- Patent number 8,932,937
- Issue date Jan 13, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive endpoint method for pad life effect on chemical mechanical...
- Patent number 8,367,429
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-An Lee
- B24 - GRINDING POLISHING
Information Patent Grant
Polysilicon hard mask etch defect particle removal
- Patent number 6,852,472
- Issue date Feb 8, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic device with a redistribution layer having a step sh...
- Patent number 6,756,671
- Issue date Jun 29, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oversampling data recovery apparatus and method
- Patent number 6,611,219
- Issue date Aug 26, 2003
- Macronix International Co., Ltd.
- Chu-Hua Lee
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor wafer incorporating marks for inspecting first layer...
- Patent number 5,633,505
- Issue date May 27, 1997
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Jye Chung
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of inspecting first layer overlay shift in global alignment...
- Patent number 5,545,570
- Issue date Aug 13, 1996
- Taiwan Semiconductor Manufacturing Company
- Wen-Jye Chung
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME
- Publication number 20230274982
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-An LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME
- Publication number 20210265222
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-An LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210098283
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shen-Nan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME
- Publication number 20200365588
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-An LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POST CMP CLEANING APPARATUS AND POST CMP CLEANING METHODS
- Publication number 20200294821
- Publication date Sep 17, 2020
- Chen-Hao WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER POLISHING WITH SEPARATED CHEMICAL REACTION AND MECHANICAL POL...
- Publication number 20200176264
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Shen-Nan LEE
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
SLURRY AND MANUFACTURING SEMICONDUCTOR USING THE SLURRY
- Publication number 20200135486
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-HUNG LIAO
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200090983
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shen-Nan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME
- Publication number 20200091007
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-An LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPATIVE ENDPOINT METHOD FOR PAD LIFE EFFECT ON CHEMICAL MECHANICA...
- Publication number 20130146224
- Publication date Jun 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-An Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADAPTIVE ENDPOINT METHOD FOR PAD LIFE EFFECT ON CHEMICAL MECHANICAL...
- Publication number 20120231555
- Publication date Sep 13, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-An Lee
- G05 - CONTROLLING REGULATING
Information Patent Application
Pad open structure
- Publication number 20070045871
- Publication date Mar 1, 2007
- Sitronix Technology Corp.
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for whole-chip electrostatic-discharge protection
- Publication number 20060132995
- Publication date Jun 22, 2006
- Sitronix Technology Corp.
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon hard mask etch defect particle removal
- Publication number 20040081918
- Publication date Apr 29, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Microelectronic device with a redistribution layer having a step sh...
- Publication number 20040004284
- Publication date Jan 8, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Photoresist mask-free oxide define region (ODR)
- Publication number 20030214013
- Publication date Nov 20, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chu-Sheng Lee
- H01 - BASIC ELECTRIC ELEMENTS

Chu-Mei Lee

Person

Patents Grantslast 30 patents

Fin isolation structure for FinFET and method of forming the same

Semiconductor structure with oxidized ruthenium

Fin isolation structure for FinFET and method of forming the same

Fin isolation structure for FinFET and method of forming the same

Wafer polishing with separated chemical reaction and mechanical pol...

Ruthenium-containing semiconductor structure and method of manufact...

Slurry and manufacturing semiconductor using the slurry

Fin isolation structure for FinFET and method of forming the same

Adaptive endpoint method for pad life effect on chemical mechanical...

Photoresist mask-free oxide define region (ODR)

Adaptive endpoint method for pad life effect on chemical mechanical...

Polysilicon hard mask etch defect particle removal

Microelectronic device with a redistribution layer having a step sh...

Oversampling data recovery apparatus and method

Semiconductor wafer incorporating marks for inspecting first layer...

Method of inspecting first layer overlay shift in global alignment...

Patents Applicationslast 30 patents

FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME

FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME

POST CMP CLEANING APPARATUS AND POST CMP CLEANING METHODS

WAFER POLISHING WITH SEPARATED CHEMICAL REACTION AND MECHANICAL POL...

SLURRY AND MANUFACTURING SEMICONDUCTOR USING THE SLURRY

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME

ADAPATIVE ENDPOINT METHOD FOR PAD LIFE EFFECT ON CHEMICAL MECHANICA...

ADAPTIVE ENDPOINT METHOD FOR PAD LIFE EFFECT ON CHEMICAL MECHANICAL...

Pad open structure

Method for whole-chip electrostatic-discharge protection

Polysilicon hard mask etch defect particle removal

Microelectronic device with a redistribution layer having a step sh...

Photoresist mask-free oxide define region (ODR)