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Chuan C. Chang
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Warren, NJ, US
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last 30 patents
Information
Patent Grant
Nitrided silicon dioxide layers for semiconductor integrated circuits
Patent number
4,623,912
Issue date
Nov 18, 1986
AT&T Bell Laboratories
Chuan C. Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating MOS field effect transistors
Patent number
4,324,038
Issue date
Apr 13, 1982
Bell Telephone Laboratories, Incorporated
Chuan C. Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gold-tin-gold ohmic contact to N-type group III-V semiconductors
Patent number
4,179,534
Issue date
Dec 18, 1979
Bell Telephone Laboratories, Incorporated
Chuan C. Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fabrication of gallium arsenide MOS devices
Patent number
4,144,634
Issue date
Mar 20, 1979
Bell Telephone Laboratories, Incorporated
Chuan C. Chang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Technique for preparation of stoichiometric III-V compound semicond...
Patent number
4,026,741
Issue date
May 31, 1977
Bell Telephone Laboratories, Incorporated
Chuan Chung Chang
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR