Chuck Jang

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming ONO-type sidewall with reduced bird's beak
- Patent number 7,910,429
- Issue date Mar 22, 2011
- Promos Technologies, Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improving quality of high temperature oxide (HTO) forme...
- Patent number 7,323,729
- Issue date Jan 29, 2008
- ProMOS Technologies Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for simultaneously fabricating ONO-type memory cell, and gat...
- Patent number 7,297,597
- Issue date Nov 20, 2007
- Promos Technologies, Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision creation of inter-gates insulator
- Patent number 7,229,880
- Issue date Jun 12, 2007
- ProMOS Technologies Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of interpoly oxides in a non-volatile memor...
- Patent number 7,122,415
- Issue date Oct 17, 2006
- Promos Technologies, Inc.
- Chuck Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of air gap position in a dielectric layer
- Patent number 7,087,998
- Issue date Aug 8, 2006
- ProMOS Technology, Inc.
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improving quality of semiconductor oxide composition fo...
- Patent number 7,071,127
- Issue date Jul 4, 2006
- Promos Technologies, Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced thickness variation in a material layer deposited in narrow...
- Patent number 7,026,172
- Issue date Apr 11, 2006
- ProMOS Technologies, Inc.
- Tai-Peng Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Floating gate nitridation
- Patent number 7,001,810
- Issue date Feb 21, 2006
- ProMOS Technologies Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation without grooving
- Patent number 6,924,542
- Issue date Aug 2, 2005
- ProMOS Technologies, Inc.
- Hua Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a protective buffer layer for high temperature o...
- Patent number 6,893,920
- Issue date May 17, 2005
- Promos Technologies, Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of air gap position in a dielectric layer
- Patent number 6,881,668
- Issue date Apr 19, 2005
- Mosel Vitel, Inc.
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including SiON buffer layer
- Patent number 6,849,897
- Issue date Feb 1, 2005
- ProMOS Technologies Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench isolation without grooving
- Patent number 6,787,409
- Issue date Sep 7, 2004
- Mosel Vitelic, Inc.
- Hua Ji
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Precision creation of inter-gates insulator
- Publication number 20070264776
- Publication date Nov 15, 2007
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for improving quality of high temperature oxide (HTO) forme...
- Publication number 20060211270
- Publication date Sep 21, 2006
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for simultaneously fabricating ONO-type memory cell, and gat...
- Publication number 20060017092
- Publication date Jan 26, 2006
- ProMos Technologies Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposition of interpoly oxides in a non-volatile memor...
- Publication number 20060008997
- Publication date Jan 12, 2006
- Chuck Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming ONO-type sidewall with reduced bird's beak
- Publication number 20050227437
- Publication date Oct 13, 2005
- ProMos Technologies Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precision creation of inter-gates insulator
- Publication number 20050106793
- Publication date May 19, 2005
- Mosel Vitelic, Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of air gap position in a dielectric layer
- Publication number 20050051865
- Publication date Mar 10, 2005
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF AIR GAP POSITION IN A DIELECTRIC LAYER
- Publication number 20050051864
- Publication date Mar 10, 2005
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation without grooving
- Publication number 20050003630
- Publication date Jan 6, 2005
- Hua Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for improving quality of high temperature oxide (HTO) forme...
- Publication number 20040235295
- Publication date Nov 25, 2004
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Floating gate nitridation
- Publication number 20040185647
- Publication date Sep 23, 2004
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation without grooving
- Publication number 20040099906
- Publication date May 27, 2004
- Mosel Vitelic Corporation
- Hua Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a protective buffer layer for high temperature o...
- Publication number 20040053468
- Publication date Mar 18, 2004
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a protective buffer layer for high temperature o...
- Publication number 20040051135
- Publication date Mar 18, 2004
- Mosel Vitelic, Inc.
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Floating gate nitridation
- Publication number 20030153150
- Publication date Aug 14, 2003
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Floating gate nitridation
- Publication number 20030153149
- Publication date Aug 14, 2003
- Zhong Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced thickness variation in a material layer deposited in norrow...
- Publication number 20030077888
- Publication date Apr 24, 2003
- Tai-Peng Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Person

Patents Grantslast 30 patents

Method of forming ONO-type sidewall with reduced bird's beak

Methods for improving quality of high temperature oxide (HTO) forme...

Method for simultaneously fabricating ONO-type memory cell, and gat...

Precision creation of inter-gates insulator

Atomic layer deposition of interpoly oxides in a non-volatile memor...

Control of air gap position in a dielectric layer

Methods for improving quality of semiconductor oxide composition fo...

Reduced thickness variation in a material layer deposited in narrow...

Floating gate nitridation

Trench isolation without grooving

Method for forming a protective buffer layer for high temperature o...

Control of air gap position in a dielectric layer

Transistor including SiON buffer layer

Method of forming trench isolation without grooving

Patents Applicationslast 30 patents

Precision creation of inter-gates insulator

Methods for improving quality of high temperature oxide (HTO) forme...

Method for simultaneously fabricating ONO-type memory cell, and gat...

Atomic layer deposition of interpoly oxides in a non-volatile memor...

Method of forming ONO-type sidewall with reduced bird's beak

Precision creation of inter-gates insulator

Control of air gap position in a dielectric layer

CONTROL OF AIR GAP POSITION IN A DIELECTRIC LAYER

Trench isolation without grooving

Methods for improving quality of high temperature oxide (HTO) forme...

Floating gate nitridation

Trench isolation without grooving

Method for forming a protective buffer layer for high temperature o...

Method for forming a protective buffer layer for high temperature o...

Floating gate nitridation

Floating gate nitridation

Reduced thickness variation in a material layer deposited in norrow...