Chun-Chen Yeh

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 12,119,393
- Issue date Oct 15, 2024
- Adeia Semiconductor Solutions LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistor with wrap-around contacts
- Patent number 11,869,893
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor including symmetrical source/drain extension ju...
- Patent number 11,862,710
- Issue date Jan 2, 2024
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced source/drain coupling for CFET
- Patent number 11,688,646
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation failure resilient neuromorphic device
- Patent number 11,610,101
- Issue date Mar 21, 2023
- International Business Machines Corporation
- Youngseok Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical field effect transistor with self-aligned source and drain...
- Patent number 11,575,025
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source drain contact formation with trench metastabl...
- Patent number 11,562,906
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with uniform source/drain epitaxy
- Patent number 11,502,202
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random matrix hardware for machine learning
- Patent number 11,494,655
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Xiao Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 11,404,560
- Issue date Aug 2, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming replacement low-k spacer in tight pitch fin field effect tr...
- Patent number 11,374,111
- Issue date Jun 28, 2022
- International Business Machines Corporation
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom source-drain region
- Patent number 11,355,633
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet semiconductor devices with sigma shaped inner spacer
- Patent number 11,348,999
- Issue date May 31, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable vertical transistor bottom source-drain epitaxy
- Patent number 11,335,804
- Issue date May 17, 2022
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aspect ratio trapping in channel last process
- Patent number 11,309,408
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors having improved control of top source or drain...
- Patent number 11,239,342
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor including symmetrical source/drain extension ju...
- Patent number 11,239,343
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistor with wrap-around contacts
- Patent number 11,201,153
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor having partially self-limiting bottom isolatio...
- Patent number 11,183,558
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with self-aligned source and drain...
- Patent number 11,177,370
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,171,204
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-stage top source drain epitaxy formation for vertical field eff...
- Patent number 11,164,787
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced source/drain coupling for CFET
- Patent number 11,164,793
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device integrated with a FINFET transistor
- Patent number 11,158,636
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,152,460
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistors with reduced coupling effect
- Patent number 11,069,684
- Issue date Jul 20, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation for nanosheet devices
- Patent number 11,062,937
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional (2D) self-aligned contact (or via) to enable furthe...
- Patent number 11,056,386
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with dual inner airgap spacers
- Patent number 11,056,570
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit for CMOS based resistive processing unit
- Patent number 11,055,610
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Yulong Li
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
VTFET WITH CONTROLLED FIN HEIGHT
- Publication number 20240072164
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fork Sheet with Reduced Coupling Effect
- Publication number 20230178559
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PUNCH THROUGH STOPPER IN BULK FINFET DEVICE
- Publication number 20220336643
- Publication date Oct 20, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR INCLUDING SYMMETRICAL SOURCE/DRAIN EXTENSION JU...
- Publication number 20220130980
- Publication date Apr 28, 2022
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND DRAIN...
- Publication number 20220059677
- Publication date Feb 24, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR WITH WRAP-AROUND CONTACTS
- Publication number 20220052047
- Publication date Feb 17, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SOURCE/DRAIN COUPLING FOR CFET
- Publication number 20210366782
- Publication date Nov 25, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SOURCE/DRAIN COUPLING FOR CFET
- Publication number 20210296184
- Publication date Sep 23, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SEMICONDUCTOR DEVICES WITH SIGMA SHAPED INNER SPACER
- Publication number 20210288141
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND DRAIN...
- Publication number 20210273077
- Publication date Sep 2, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR WITH WRAP-AROUND CONTACTS
- Publication number 20210265348
- Publication date Aug 26, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR INCLUDING SYMMETRICAL SOURCE/DRAIN EXTENSION JU...
- Publication number 20210265488
- Publication date Aug 26, 2021
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR HAVING PARTIALLY SELF-LIMITING BOTTOM ISOLATIO...
- Publication number 20210249506
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE INTEGRATED WITH A FINFET TRANSISTOR
- Publication number 20210233910
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SOURCE-DRAIN REGION
- Publication number 20210210632
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE VERTICAL TRANSISTOR BOTTOM SOURCE-DRAIN EPITAXY
- Publication number 20210210631
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STAGE TOP SOURCE DRAIN EPITAXY FORMATION FOR VERTICAL FIELD EFF...
- Publication number 20210193527
- Publication date Jun 24, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH UNIFORM SOURCE/DRAIN EPITAXY
- Publication number 20210119051
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION FAILURE RESILIENT NEUROMORPHIC DEVICE
- Publication number 20210064974
- Publication date Mar 4, 2021
- International Business Machines Corporation
- Youngseok Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-DIMENSIONAL (2D) SELF-ALIGNED CONTACT (OR VIA) TO ENABLE FURTHE...
- Publication number 20200411376
- Publication date Dec 31, 2020
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH UNIFORM SOURCE/DRAIN EPITAXY
- Publication number 20200403099
- Publication date Dec 24, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC GATE EDGE SPACING FOR SRAM STRUCTURES
- Publication number 20200357805
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR HAVING IMPROVED BOTTOM ISOLATION
- Publication number 20200357884
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL ISOLATION FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20200312956
- Publication date Oct 1, 2020
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH TOP AND BOTTOM AIRGAP SPACERS
- Publication number 20200303497
- Publication date Sep 24, 2020
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED SOURCE DRAIN EPITAXY TO REDUCE SHORTS IN CMOS INTEGRATED C...
- Publication number 20200295200
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MECHANICALLY STABLE COMPLEMENTARY FIELD EFFECT TRANSISTORS
- Publication number 20200286788
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PUNCH THROUGH STOPPER IN BULK FINFET DEVICE
- Publication number 20200259002
- Publication date Aug 13, 2020
- Tessera, Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES WITH BOTTOM DIELECTRIC ISOLATION
- Publication number 20200227306
- Publication date Jul 16, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION FOR NANOSHEET DEVICES
- Publication number 20200227305
- Publication date Jul 16, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Chun-Chen Yeh

Person

Patents Grantslast 30 patents

Punch through stopper in bulk finFET device

Stacked field effect transistor with wrap-around contacts

Vertical transistor including symmetrical source/drain extension ju...

Reduced source/drain coupling for CFET

Formation failure resilient neuromorphic device

Vertical field effect transistor with self-aligned source and drain...

Low resistance source drain contact formation with trench metastabl...

Transistors with uniform source/drain epitaxy

Random matrix hardware for machine learning

Punch through stopper in bulk finFET device

Forming replacement low-k spacer in tight pitch fin field effect tr...

Vertical field effect transistor with bottom source-drain region

Nanosheet semiconductor devices with sigma shaped inner spacer

Scalable vertical transistor bottom source-drain epitaxy

Aspect ratio trapping in channel last process

Vertical transistors having improved control of top source or drain...

Vertical transistor including symmetrical source/drain extension ju...

Stacked field effect transistor with wrap-around contacts

Nanosheet transistor having partially self-limiting bottom isolatio...

Vertical field effect transistor with self-aligned source and drain...

High thermal budget compatible punch through stop integration using...

Two-stage top source drain epitaxy formation for vertical field eff...

Reduced source/drain coupling for CFET

Nanosheet device integrated with a FINFET transistor

High thermal budget compatible punch through stop integration using...

Stacked field effect transistors with reduced coupling effect

Dielectric isolation for nanosheet devices

Two-dimensional (2D) self-aligned contact (or via) to enable furthe...

Nanosheet transistor with dual inner airgap spacers

Circuit for CMOS based resistive processing unit

Patents Applicationslast 30 patents

VTFET WITH CONTROLLED FIN HEIGHT

Fork Sheet with Reduced Coupling Effect

PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

VERTICAL TRANSISTOR INCLUDING SYMMETRICAL SOURCE/DRAIN EXTENSION JU...

VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND DRAIN...

STACKED FIELD EFFECT TRANSISTOR WITH WRAP-AROUND CONTACTS

REDUCED SOURCE/DRAIN COUPLING FOR CFET

REDUCED SOURCE/DRAIN COUPLING FOR CFET

NANOSHEET SEMICONDUCTOR DEVICES WITH SIGMA SHAPED INNER SPACER

VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND DRAIN...

STACKED FIELD EFFECT TRANSISTOR WITH WRAP-AROUND CONTACTS

VERTICAL TRANSISTOR INCLUDING SYMMETRICAL SOURCE/DRAIN EXTENSION JU...

NANOSHEET TRANSISTOR HAVING PARTIALLY SELF-LIMITING BOTTOM ISOLATIO...

NANOSHEET DEVICE INTEGRATED WITH A FINFET TRANSISTOR

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SOURCE-DRAIN REGION

SCALABLE VERTICAL TRANSISTOR BOTTOM SOURCE-DRAIN EPITAXY

TWO-STAGE TOP SOURCE DRAIN EPITAXY FORMATION FOR VERTICAL FIELD EFF...

TRANSISTORS WITH UNIFORM SOURCE/DRAIN EPITAXY

FORMATION FAILURE RESILIENT NEUROMORPHIC DEVICE

TWO-DIMENSIONAL (2D) SELF-ALIGNED CONTACT (OR VIA) TO ENABLE FURTHE...

TRANSISTORS WITH UNIFORM SOURCE/DRAIN EPITAXY

ASYMMETRIC GATE EDGE SPACING FOR SRAM STRUCTURES

NANOSHEET TRANSISTOR HAVING IMPROVED BOTTOM ISOLATION

ELECTRICAL ISOLATION FOR NANOSHEET TRANSISTOR DEVICES

VERTICAL FIELD EFFECT TRANSISTOR WITH TOP AND BOTTOM AIRGAP SPACERS

CONFINED SOURCE DRAIN EPITAXY TO REDUCE SHORTS IN CMOS INTEGRATED C...

MECHANICALLY STABLE COMPLEMENTARY FIELD EFFECT TRANSISTORS

PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

FIN STRUCTURES WITH BOTTOM DIELECTRIC ISOLATION

DIELECTRIC ISOLATION FOR NANOSHEET DEVICES