Chun-Hung Lai

Person

Kamakura, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Sequential deselection of word lines for suppressing first read issue
- Patent number 9,830,994
- Issue date Nov 28, 2017
- SanDisk Technologies LLC
- Noriyuki Mitsuhira
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block erase for block programming in non-volatile memory
- Patent number 9,543,023
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Chun-hung Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Selected word line dependent select gate voltage during program
- Patent number RE45871
- Issue date Jan 26, 2016
- SanDisk Technologies Inc.
- Chun-Hung Lai
- 001 -
Information Patent Grant
Reduced current program verify in non-volatile memory
- Patent number 9,236,139
- Issue date Jan 12, 2016
- SanDisk Technologies Inc.
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic erase depth for improved endurance of non-volatile memory
- Patent number 9,214,240
- Issue date Dec 15, 2015
- SanDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Select gate bias during program of non-volatile storage
- Patent number 9,087,601
- Issue date Jul 21, 2015
- SanDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Partitioned erase and erase verification in non-volatile memory
- Patent number 8,958,249
- Issue date Feb 17, 2015
- SanDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Selected word line dependent select gate diffusion region voltage d...
- Patent number 8,804,430
- Issue date Aug 12, 2014
- SanDisk Technologies Inc.
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Selected word line dependent select gate voltage during program
- Patent number 8,638,608
- Issue date Jan 28, 2014
- SanDisk Technologies Inc.
- Chun-Hung Lai
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Partial Block Erase For Block Programming In Non-Volatile Memory
- Publication number 20160217860
- Publication date Jul 28, 2016
- SANDISK TECHNOLOGIES INC.
- Chun-hung Lai
- G11 - INFORMATION STORAGE
Information Patent Application
PARTITIONED ERASE AND ERASE VERIFICATION IN NON-VOLATILE MEMORY
- Publication number 20140247667
- Publication date Sep 4, 2014
- SANDISK TECHNOLOGIES INC.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC ERASE DEPTH FOR IMPROVED ENDURANCE OF NON-VOLATILE MEMORY
- Publication number 20140247666
- Publication date Sep 4, 2014
- SanDisk Technologies, Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
SELECT GATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE
- Publication number 20140160848
- Publication date Jun 12, 2014
- SandDisk Technologies Inc.
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE D...
- Publication number 20130250689
- Publication date Sep 26, 2013
- Chun-Hung Lai
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTED WORD LINE DEPENDENT SELECT GATE VOLTAGE DURING PROGRAM
- Publication number 20130250690
- Publication date Sep 26, 2013
- Chun-Hung Lai
- G11 - INFORMATION STORAGE

Chun-Hung Lai

Person

Patents Grantslast 30 patents

Sequential deselection of word lines for suppressing first read issue

Partial block erase for block programming in non-volatile memory

Selected word line dependent select gate voltage during program

Reduced current program verify in non-volatile memory

Dynamic erase depth for improved endurance of non-volatile memory

Select gate bias during program of non-volatile storage

Partitioned erase and erase verification in non-volatile memory

Selected word line dependent select gate diffusion region voltage d...

Selected word line dependent select gate voltage during program

Patents Applicationslast 30 patents

Partial Block Erase For Block Programming In Non-Volatile Memory

PARTITIONED ERASE AND ERASE VERIFICATION IN NON-VOLATILE MEMORY

DYNAMIC ERASE DEPTH FOR IMPROVED ENDURANCE OF NON-VOLATILE MEMORY

SELECT GATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE

SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE D...

SELECTED WORD LINE DEPENDENT SELECT GATE VOLTAGE DURING PROGRAM