Chun YAN

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Processing of workpieces using fluorocarbon plasma
- Patent number 11,651,977
- Issue date May 16, 2023
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Shanyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of utilizing a degassing chamber to reduce arsenic outgassin...
- Patent number 11,649,559
- Issue date May 16, 2023
- Applied Materials, Inc.
- Xinyu Bao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Processing of workpieces using deposition process and etch process
- Patent number 11,462,413
- Issue date Oct 4, 2022
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Shanyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon mandrel etch after native oxide punch-through
- Patent number 11,387,115
- Issue date Jul 12, 2022
- BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer etching process
- Patent number 11,276,560
- Issue date Mar 15, 2022
- Mattson Technology, Inc.
- Tsai Wen Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer open process by dual plasma
- Patent number 11,195,718
- Issue date Dec 7, 2021
- Beijing E-Town Semiconductor Technology Co., Ltd.
- Tsai Wen Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ozone treatment for selective silicon nitride etch over silicon
- Patent number 11,043,393
- Issue date Jun 22, 2021
- Mattson Technology, Inc.
- Shanyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated system and method for source/drain engineering
- Patent number 10,504,717
- Issue date Dec 10, 2019
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing native oxide and residue from a III-V group con...
- Patent number 10,438,796
- Issue date Oct 8, 2019
- Applied Materials, Inc.
- Chun Yan
- B08 - CLEANING
Information Patent Grant
UV radiation system and method for arsenic outgassing control in su...
- Patent number 10,332,739
- Issue date Jun 25, 2019
- Applied Materials, Inc.
- Chun Yan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of uniform channel formation
- Patent number 10,243,063
- Issue date Mar 26, 2019
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for wafer outgassing control
- Patent number 10,236,190
- Issue date Mar 19, 2019
- Applied Materials, Inc.
- Chun Yan
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Self-aligned process for sub-10nm fin formation
- Patent number 10,224,421
- Issue date Mar 5, 2019
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of epitaxial growth shape control for CMOS applications
- Patent number 10,205,002
- Issue date Feb 12, 2019
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for conditioning a processing chamber for steady etching rat...
- Patent number 10,177,017
- Issue date Jan 8, 2019
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and solutions for cleaning INGAAS (or III-V) substrates
- Patent number 10,147,596
- Issue date Dec 4, 2018
- Applied Materials, Inc.
- Chun Yan
- B08 - CLEANING
Information Patent Grant
Method and apparatus for wafer outgassing control
- Patent number 10,115,607
- Issue date Oct 30, 2018
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated system and method for source/drain engineering
- Patent number 10,090,147
- Issue date Oct 2, 2018
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated method for wafer outgassing reduction
- Patent number 10,043,667
- Issue date Aug 7, 2018
- Applied Materials, Inc.
- Chun Yan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming structures with V shaped bottom on silicon substrate
- Patent number 10,002,759
- Issue date Jun 19, 2018
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and solution for cleaning InGaAs (or III-V) substrates
- Patent number 9,905,412
- Issue date Feb 27, 2018
- Applied Materials, Inc.
- Chun Yan
- B08 - CLEANING
Information Patent Grant
Integrated process and structure to form III-V channel for sub-7nm...
- Patent number 9,865,706
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method in indium-gallium-arsenide channel height control...
- Patent number 9,852,903
- Issue date Dec 26, 2017
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for removing contamination from surfaces in substrate proce...
- Patent number 9,805,914
- Issue date Oct 31, 2017
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-containing substrate cleaning procedure
- Patent number 9,653,282
- Issue date May 16, 2017
- Applied Materials, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing native oxide and residue from a III-V group con...
- Patent number 9,653,291
- Issue date May 16, 2017
- Applied Materials, Inc.
- Chun Yan
- B08 - CLEANING
Information Patent Grant
Sputter etch processing for heavy metal patterning in integrated ci...
- Patent number 9,484,220
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Mark D. Hoinkis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of surface interface engineering
- Patent number 9,472,416
- Issue date Oct 18, 2016
- Applied Materials, Inc.
- Jim Zhongyi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper residue chamber clean
- Patent number 9,114,438
- Issue date Aug 25, 2015
- Applied Materials, Inc.
- Mark Hoinkis
- B08 - CLEANING
Information Patent Grant
Subtractive plasma etching of a blanket layer of metal or metal alloy
- Patent number 8,871,107
- Issue date Oct 28, 2014
- International Business Machines Corporation
- Nicholas C. M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Processing of Workpieces Using Flourocarbon Plasma
- Publication number 20210305071
- Publication date Sep 30, 2021
- Mattson Technology, Inc.
- Shanyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Etching Process
- Publication number 20210066047
- Publication date Mar 4, 2021
- Mattson Technology, Inc.
- Tsai Wen Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing Of Workpieces Using Deposition Process And Etch Process
- Publication number 20210020445
- Publication date Jan 21, 2021
- Mattson Technology, Inc.
- Shanyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Open Process By Dual Plasma
- Publication number 20210005456
- Publication date Jan 7, 2021
- Mattson Technology, Inc.
- Tsai Wen Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Plasma Gas Injection In A Separation Grid
- Publication number 20200243305
- Publication date Jul 30, 2020
- Mattson Technology, Inc.
- Weimin Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ozone Treatment for Selective Silicon Nitride Etch Over Silicon
- Publication number 20200234969
- Publication date Jul 23, 2020
- Mattson Technology, Inc.
- Shanyu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON MANDREL ETCH AFTER NATIVE OXIDE PUNCH-THROUGH
- Publication number 20200203182
- Publication date Jun 25, 2020
- Mattson Technology, Inc.
- Chun Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR WAFER OUTGASSING CONTROL
- Publication number 20190172728
- Publication date Jun 6, 2019
- Applied Materials, Inc.
- Xinyu BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES
- Publication number 20190169767
- Publication date Jun 6, 2019
- Applied Materials, Inc.
- Xinyu BAO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING
- Publication number 20190035623
- Publication date Jan 31, 2019
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONDITIONING A PROCESSING CHAMBER FOR STEADY ETCHING RAT...
- Publication number 20190013221
- Publication date Jan 10, 2019
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PROCESS FOR SUB-10NM FIN FORMATION
- Publication number 20180277649
- Publication date Sep 27, 2018
- Applied Materials, Inc.
- Zhiyuan YE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATE FORMATION FOR FULLY RELAXED SIGE GROWTH
- Publication number 20180211836
- Publication date Jul 26, 2018
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING
- Publication number 20180174825
- Publication date Jun 21, 2018
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SOLUTIONS FOR CLEANING INGAAS (OR III-V) SUBSTRATES
- Publication number 20180138032
- Publication date May 17, 2018
- Applied Materials, Inc.
- Chun YAN
- B08 - CLEANING
Information Patent Application
UV RADIATION SYSTEM AND METHOD FOR ARSENIC OUTGASSING CONTROL IN SU...
- Publication number 20180082835
- Publication date Mar 22, 2018
- Applied Materials, Inc.
- Chun YAN
- B08 - CLEANING
Information Patent Application
INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING
- Publication number 20180082836
- Publication date Mar 22, 2018
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR WAFER OUTGASSING CONTROL
- Publication number 20180082874
- Publication date Mar 22, 2018
- Applied Materials, Inc.
- Xinyu BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED METHOD FOR WAFER OUTGASSING REDUCTION
- Publication number 20180076031
- Publication date Mar 15, 2018
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES
- Publication number 20180073162
- Publication date Mar 15, 2018
- Applied Materials, Inc.
- Xinyu BAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL
- Publication number 20180033659
- Publication date Feb 1, 2018
- Applied Materials, Inc.
- Chun YAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF EPITAXIAL GROWTH SHAPE CONTROL FOR CMOS APPLICATIONS
- Publication number 20180033872
- Publication date Feb 1, 2018
- Applied Materials, Inc.
- Xinyu BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF UNIFORM CHANNEL FORMATION
- Publication number 20180033873
- Publication date Feb 1, 2018
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STRUCTURES WITH V SHAPED BOTTOM ON SILICON SUBSTRATE
- Publication number 20180033621
- Publication date Feb 1, 2018
- Applied Materials, Inc.
- Xinyu BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND MATERIAL FOR CMOS CONTACT AND BARRIER LAYER
- Publication number 20180019121
- Publication date Jan 18, 2018
- Applied Materials, Inc.
- Xinyu BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR WAFER OUTGASSING CONTROL
- Publication number 20170352557
- Publication date Dec 7, 2017
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING NATIVE OXIDE AND RESIDUE FROM A III-V GROUP CON...
- Publication number 20170229303
- Publication date Aug 10, 2017
- Applied Materials, Inc.
- Chun YAN
- B08 - CLEANING
Information Patent Application
SYSTEM AND METHOD IN INDIUM-GALLIUM-ARSENIDE CHANNEL HEIGHT CONTROL...
- Publication number 20170221706
- Publication date Aug 3, 2017
- Applied Materials, Inc.
- Chun YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SOLUTIONS FOR CLEANING INGAAS (OR III-V) SUBSTRATES
- Publication number 20170162379
- Publication date Jun 8, 2017
- Applied Materials, Inc.
- Chun YAN
- B08 - CLEANING
Information Patent Application
INTEGRATED PROCESS AND STRUCTURE TO FORM III-V CHANNEL FOR SUB-7NM...
- Publication number 20170133224
- Publication date May 11, 2017
- Applied Materials, Inc.
- Xinyu BAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Processing of workpieces using fluorocarbon plasma

Method of utilizing a degassing chamber to reduce arsenic outgassin...

Processing of workpieces using deposition process and etch process

Silicon mandrel etch after native oxide punch-through

Spacer etching process

Spacer open process by dual plasma

Ozone treatment for selective silicon nitride etch over silicon

Integrated system and method for source/drain engineering

Method for removing native oxide and residue from a III-V group con...

UV radiation system and method for arsenic outgassing control in su...

Method of uniform channel formation

Method for wafer outgassing control

Self-aligned process for sub-10nm fin formation

Method of epitaxial growth shape control for CMOS applications

Method for conditioning a processing chamber for steady etching rat...

Methods and solutions for cleaning INGAAS (or III-V) substrates

Method and apparatus for wafer outgassing control

Integrated system and method for source/drain engineering

Integrated method for wafer outgassing reduction

Method of forming structures with V shaped bottom on silicon substrate

Method and solution for cleaning InGaAs (or III-V) substrates

Integrated process and structure to form III-V channel for sub-7nm...

System and method in indium-gallium-arsenide channel height control...

Methods for removing contamination from surfaces in substrate proce...

Silicon-containing substrate cleaning procedure

Method for removing native oxide and residue from a III-V group con...

Sputter etch processing for heavy metal patterning in integrated ci...

Methods of surface interface engineering

Copper residue chamber clean

Subtractive plasma etching of a blanket layer of metal or metal alloy

Patents Applicationslast 30 patents

Processing of Workpieces Using Flourocarbon Plasma

Spacer Etching Process

Processing Of Workpieces Using Deposition Process And Etch Process

Spacer Open Process By Dual Plasma

Post Plasma Gas Injection In A Separation Grid

Ozone Treatment for Selective Silicon Nitride Etch Over Silicon

SILICON MANDREL ETCH AFTER NATIVE OXIDE PUNCH-THROUGH

METHOD AND APPARATUS FOR WAFER OUTGASSING CONTROL

DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING

METHOD FOR CONDITIONING A PROCESSING CHAMBER FOR STEADY ETCHING RAT...

SELF-ALIGNED PROCESS FOR SUB-10NM FIN FORMATION

TEMPLATE FORMATION FOR FULLY RELAXED SIGE GROWTH

INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING

METHODS AND SOLUTIONS FOR CLEANING INGAAS (OR III-V) SUBSTRATES

UV RADIATION SYSTEM AND METHOD FOR ARSENIC OUTGASSING CONTROL IN SU...

INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING

METHOD AND APPARATUS FOR WAFER OUTGASSING CONTROL

INTEGRATED METHOD FOR WAFER OUTGASSING REDUCTION

DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL

METHOD OF EPITAXIAL GROWTH SHAPE CONTROL FOR CMOS APPLICATIONS

METHOD OF UNIFORM CHANNEL FORMATION

METHOD OF FORMING STRUCTURES WITH V SHAPED BOTTOM ON SILICON SUBSTRATE

METHOD AND MATERIAL FOR CMOS CONTACT AND BARRIER LAYER

METHOD FOR WAFER OUTGASSING CONTROL

METHOD FOR REMOVING NATIVE OXIDE AND RESIDUE FROM A III-V GROUP CON...

SYSTEM AND METHOD IN INDIUM-GALLIUM-ARSENIDE CHANNEL HEIGHT CONTROL...

METHODS AND SOLUTIONS FOR CLEANING INGAAS (OR III-V) SUBSTRATES

INTEGRATED PROCESS AND STRUCTURE TO FORM III-V CHANNEL FOR SUB-7NM...