Chun Yu WONG

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Preventing dielectric void over trench isolation region
- Patent number 11,171,036
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap regions of a semiconductor device
- Patent number 11,018,221
- Issue date May 25, 2021
- GLOBALFOUNDRIES U.S. INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI structure with liner along lower portion of longitudinal sides...
- Patent number 10,910,276
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically oriented metal silicide containing e-fuse device
- Patent number 10,879,171
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned chamferless interconnect structures of semiconductor d...
- Patent number 10,804,199
- Issue date Oct 13, 2020
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically oriented metal silicide containing e-fuse device and met...
- Patent number 10,510,662
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor fins with different thickness gate dielectric
- Patent number 10,475,791
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned single diffusion break isolation with reduction of str...
- Patent number 10,468,481
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid material electrically programmable fuse and methods of forming
- Patent number 10,461,029
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins with single diffusion break facet improvement using epitaxial...
- Patent number 10,439,026
- Issue date Oct 8, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor (FinFET) and method of production thereof
- Patent number 10,418,285
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuses with nanowire fuse links and fabrication method...
- Patent number 10,332,834
- Issue date Jun 25, 2019
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via device having low stress, thin film gaps and me...
- Patent number 10,043,764
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of forming the same with metal laye...
- Patent number 9,761,481
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES, INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuses with nanowire fuse links and fabrication method...
- Patent number 9,601,428
- Issue date Mar 21, 2017
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating nanowire structures
- Patent number 9,508,795
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon via device having low stress, thin film gaps and me...
- Patent number 9,455,188
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of forming the same with multiple e...
- Patent number 9,245,790
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES, INC.
- Sarasvathi Thangaraju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D integrated circuit system with connecting via structure and meth...
- Patent number 8,637,993
- Issue date Jan 28, 2014
- GLOBALFOUNDRIES, INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF
- Publication number 20230317526
- Publication date Oct 5, 2023
- LIANG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION
- Publication number 20210111065
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP REGIONS OF A SEMICONDUCTOR DEVICE
- Publication number 20210050412
- Publication date Feb 18, 2021
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CHAMFERLESS INTERCONNECT STRUCTURES OF SEMICONDUCTOR D...
- Publication number 20200098688
- Publication date Mar 26, 2020
- GLOBALFOUNDRIES INC.
- YONGJUN SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE
- Publication number 20200020631
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FINS WITH DIFFERENT THICKNESS GATE DIELECTRIC
- Publication number 20190371796
- Publication date Dec 5, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SINGLE DIFFUSION BREAK ISOLATION WITH REDUCTION OF STR...
- Publication number 20190229183
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE AND MET...
- Publication number 20190139892
- Publication date May 9, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINS WITH SINGLE DIFFUSION BREAK FACET IMPROVEMENT USING EPITAXIAL...
- Publication number 20190115426
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MATERIAL ELECTRICALLY PROGRAMMABLE FUSE AND METHODS OF FORMING
- Publication number 20190067191
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FINFET WITH IMPROVED TOP SOURCE/DRAIN CONTACT
- Publication number 20190067474
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FUSES WITH NANOWIRE FUSE LINKS AND FABRICATION METHOD...
- Publication number 20170141031
- Publication date May 18, 2017
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND ME...
- Publication number 20160372425
- Publication date Dec 22, 2016
- GLOBALFOUNDRIES Inc.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FUSES WITH NANOWIRE FUSE LINKS AND FABRICATION METHOD...
- Publication number 20160284643
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING NANOWIRE STRUCTURES
- Publication number 20160225849
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND ME...
- Publication number 20140203446
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES INC.
- Huang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH METAL LAYE...
- Publication number 20140203449
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES, Inc.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH EMBEDDED I...
- Publication number 20140203827
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES, Inc.
- Sarasvathi Thangaraju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT SYSTEM WITH CONNECTING VIA STRUCTURE AND METH...
- Publication number 20130277854
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS

Chun Yu WONG

Person

Patents Grantslast 30 patents

Preventing dielectric void over trench isolation region

Air gap regions of a semiconductor device

STI structure with liner along lower portion of longitudinal sides...

Vertically oriented metal silicide containing e-fuse device

Self-aligned chamferless interconnect structures of semiconductor d...

Fin-type transistors with spacers on the gates

Vertically oriented metal silicide containing e-fuse device and met...

Transistor fins with different thickness gate dielectric

Self-aligned single diffusion break isolation with reduction of str...

Hybrid material electrically programmable fuse and methods of forming

Fins with single diffusion break facet improvement using epitaxial...

Fin field-effect transistor (FinFET) and method of production thereof

Semiconductor fuses with nanowire fuse links and fabrication method...

Through silicon via device having low stress, thin film gaps and me...

Integrated circuits and methods of forming the same with metal laye...

Semiconductor fuses with nanowire fuse links and fabrication method...

Methods of fabricating nanowire structures

Through silicon via device having low stress, thin film gaps and me...

Integrated circuits and methods of forming the same with multiple e...

3D integrated circuit system with connecting via structure and meth...

Patents Applicationslast 30 patents

METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF

PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION

AIR GAP REGIONS OF A SEMICONDUCTOR DEVICE

SELF-ALIGNED CHAMFERLESS INTERCONNECT STRUCTURES OF SEMICONDUCTOR D...

VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE

TRANSISTOR FINS WITH DIFFERENT THICKNESS GATE DIELECTRIC

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

SELF-ALIGNED SINGLE DIFFUSION BREAK ISOLATION WITH REDUCTION OF STR...

VERTICALLY ORIENTED METAL SILICIDE CONTAINING E-FUSE DEVICE AND MET...

FINS WITH SINGLE DIFFUSION BREAK FACET IMPROVEMENT USING EPITAXIAL...

HYBRID MATERIAL ELECTRICALLY PROGRAMMABLE FUSE AND METHODS OF FORMING

VERTICAL FINFET WITH IMPROVED TOP SOURCE/DRAIN CONTACT

SEMICONDUCTOR FUSES WITH NANOWIRE FUSE LINKS AND FABRICATION METHOD...

THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND ME...

SEMICONDUCTOR FUSES WITH NANOWIRE FUSE LINKS AND FABRICATION METHOD...

METHODS OF FABRICATING NANOWIRE STRUCTURES

THROUGH SILICON VIA DEVICE HAVING LOW STRESS, THIN FILM GAPS AND ME...

INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH METAL LAYE...

INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH EMBEDDED I...

3D INTEGRATED CIRCUIT SYSTEM WITH CONNECTING VIA STRUCTURE AND METH...