Chung-Chiang Min

Person

Hsinchu County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Etch stop layer for memory device formation
- Patent number 12,027,420
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Huang Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with flat-top bottom electrodes and methods for formi...
- Patent number 11,925,032
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chung-Chiang Min
- G11 - INFORMATION STORAGE
Information Patent Grant
Sidewall spacer structure for memory cell
- Patent number 11,818,962
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yao-Wen Chang
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,785,861
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench formation scheme for programmable metallization cell to prev...
- Patent number 11,785,786
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming memory cell
- Patent number 11,665,911
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and manufacturing technology
- Patent number 11,495,743
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chern-Yow Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with flat-top bottom electrodes and methods for formi...
- Patent number 11,437,431
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for memory device formation
- Patent number 11,380,580
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Huang Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,362,265
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench formation scheme for programmable metallization cell to prev...
- Patent number 11,342,379
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Grant
Sidewall spacer structure for memory cell
- Patent number 11,121,308
- Issue date Sep 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory cell
- Patent number 11,088,202
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing capacitor structure
- Patent number 10,872,895
- Issue date Dec 22, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory structure
- Patent number 10,825,825
- Issue date Nov 3, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 10,720,568
- Issue date Jul 21, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 10,454,021
- Issue date Oct 22, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming flash memory structure
- Patent number 10,355,011
- Issue date Jul 16, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control the common drain of a pair of control gates and t...
- Patent number 10,276,584
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming flash memory structure
- Patent number 9,859,295
- Issue date Jan 2, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure
- Patent number 9,799,665
- Issue date Oct 24, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Discrete storage element formation for thin-film storage device
- Patent number 9,786,674
- Issue date Oct 10, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure and method of manufacturing the same
- Patent number 9,711,508
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 9,673,204
- Issue date Jun 6, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control the common drain of a pair of control gates and t...
- Patent number 9,570,457
- Issue date Feb 14, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory structure
- Patent number 9,564,448
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned split gate flash memory
- Patent number 9,536,969
- Issue date Jan 3, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory structure and method of forming the same
- Patent number 9,048,316
- Issue date Jun 2, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MONOS semiconductor device
- Patent number 8,853,768
- Issue date Oct 7, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ETCH STOP LAYER FOR MEMORY DEVICE FORMATION
- Publication number 20240321635
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH FLAT-TOP BOTTOM ELECTRODES AND METHODS FOR FORMI...
- Publication number 20240172453
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chung-Chiang Min
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240023460
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL SPACER STRUCTURE FOR MEMORY CELL
- Publication number 20230389445
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Wen Chang
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20230380188
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND MANUFACTURING TECHNOLOGY
- Publication number 20220367811
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chern-Yow Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH FLAT-TOP BOTTOM ELECTRODES AND METHODS FOR FORMI...
- Publication number 20220359610
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Chung-Chiang Min
- G11 - INFORMATION STORAGE
Information Patent Application
ETCH STOP LAYER FOR MEMORY DEVICE FORMATION
- Publication number 20220319920
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Huang Huang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING MEMORY CELL
- Publication number 20220302209
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20220278170
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20220123207
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL SPACER STRUCTURE FOR MEMORY CELL
- Publication number 20210384413
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY CELL
- Publication number 20210359003
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND MANUFACTURING TECHNOLOGY
- Publication number 20210351348
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chern-Yow Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210343932
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH FLAT-TOP BOTTOM ELECTRODES AND METHODS FOR FORMI...
- Publication number 20210217811
- Publication date Jul 15, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Chung-Chiang Min
- G11 - INFORMATION STORAGE
Information Patent Application
ETCH STOP LAYER FOR MEMORY DEVICE FORMATION
- Publication number 20210134668
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Huang Huang
- G11 - INFORMATION STORAGE
Information Patent Application
SIDEWALL SPACER STRUCTURE FOR MEMORY CELL
- Publication number 20210111333
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY CELL
- Publication number 20210091139
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20200357851
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200251649
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY STRUCTURE
- Publication number 20190333926
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Ting SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180351081
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FLASH MEMORY STRUCTURE
- Publication number 20180122820
- Publication date May 3, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Ting SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING CAPACITOR STRUCTURE
- Publication number 20170287915
- Publication date Oct 5, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming semiconductor device structure
- Publication number 20170256553
- Publication date Sep 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170222128
- Publication date Aug 3, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- FU-TING SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FLASH MEMORY STRUCTURE
- Publication number 20170148803
- Publication date May 25, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Ting SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISCRETE STORAGE ELEMENT FORMATION FOR THIN-FILM STORAGE DEVICE
- Publication number 20170141120
- Publication date May 18, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS

Chung-Chiang Min

Person

Patents Grantslast 30 patents

Etch stop layer for memory device formation

Memory device with flat-top bottom electrodes and methods for formi...

Sidewall spacer structure for memory cell

Semiconductor structure and method of manufacturing the same

Trench formation scheme for programmable metallization cell to prev...

Method of forming memory cell

Buffer layer in memory cell to prevent metal redeposition

Non-volatile memory device and manufacturing technology

Memory device with flat-top bottom electrodes and methods for formi...

Etch stop layer for memory device formation

Semiconductor structure and method of manufacturing the same

Trench formation scheme for programmable metallization cell to prev...

Sidewall spacer structure for memory cell

Method of forming memory cell

Method of manufacturing capacitor structure

Flash memory structure

Semiconductor structure and method of manufacturing the same

Semiconductor structure and method of manufacturing the same

Method for forming flash memory structure

Method to control the common drain of a pair of control gates and t...

Method for forming flash memory structure

Method for forming semiconductor device structure

Discrete storage element formation for thin-film storage device

Capacitor structure and method of manufacturing the same

Semiconductor device structure and method for forming the same

Method to control the common drain of a pair of control gates and t...

Flash memory structure

Self-aligned split gate flash memory

Flash memory structure and method of forming the same

Method of fabricating MONOS semiconductor device

Patents Applicationslast 30 patents

ETCH STOP LAYER FOR MEMORY DEVICE FORMATION

MEMORY DEVICE WITH FLAT-TOP BOTTOM ELECTRODES AND METHODS FOR FORMI...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SIDEWALL SPACER STRUCTURE FOR MEMORY CELL

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

NON-VOLATILE MEMORY DEVICE AND MANUFACTURING TECHNOLOGY

MEMORY DEVICE WITH FLAT-TOP BOTTOM ELECTRODES AND METHODS FOR FORMI...

ETCH STOP LAYER FOR MEMORY DEVICE FORMATION

METHOD OF FORMING MEMORY CELL

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

SIDEWALL SPACER STRUCTURE FOR MEMORY CELL

METHOD OF FORMING MEMORY CELL

NON-VOLATILE MEMORY DEVICE AND MANUFACTURING TECHNOLOGY

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

MEMORY DEVICE WITH FLAT-TOP BOTTOM ELECTRODES AND METHODS FOR FORMI...

ETCH STOP LAYER FOR MEMORY DEVICE FORMATION

SIDEWALL SPACER STRUCTURE FOR MEMORY CELL

METHOD OF FORMING MEMORY CELL

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

FLASH MEMORY STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR FORMING FLASH MEMORY STRUCTURE

METHOD OF MANUFACTURING CAPACITOR STRUCTURE

Method for forming semiconductor device structure

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR FORMING FLASH MEMORY STRUCTURE

DISCRETE STORAGE ELEMENT FORMATION FOR THIN-FILM STORAGE DEVICE