Chung Foong TAN

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
LDMOS with improved breakdown voltage and with non-uniformed gate d...
- Patent number 10,032,902
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET
- Patent number 9,406,801
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with improved breakdown voltage
- Patent number 9,219,147
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with stressors
- Patent number 9,171,953
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with two gate stacks having different work functions for impr...
- Patent number 9,034,711
- Issue date May 19, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and method of...
- Patent number 8,975,708
- Issue date Mar 10, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system employing resistance altering techniques
- Patent number 8,969,151
- Issue date Mar 3, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel surface technique for fabrication of FinFET devices
- Patent number 8,896,072
- Issue date Nov 25, 2014
- GLOBALFOUNDRIES Singapore Pte, Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet
- Patent number 8,889,494
- Issue date Nov 18, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Patent number 8,824,208
- Issue date Sep 2, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS with improved breakdown voltage
- Patent number 8,748,271
- Issue date Jun 10, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory utilizing impact ionization and tunnelling and...
- Patent number 8,750,037
- Issue date Jun 10, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods to reduce gate contact resistance for AC reff reduction
- Patent number 8,674,457
- Issue date Mar 18, 2014
- Globalfoundries Singapore Pte., Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical transistor device and method of fabrication
- Patent number 8,629,503
- Issue date Jan 14, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with bandgap material and method of manuf...
- Patent number 8,563,386
- Issue date Oct 22, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with improved retention
- Patent number 8,530,310
- Issue date Sep 10, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nano-electro-mechanical system (NEMS) structures with actuatable se...
- Patent number 8,502,279
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
FinFET with stressors
- Patent number 8,492,235
- Issue date Jul 23, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance and method of...
- Patent number 8,470,700
- Issue date Jun 25, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Patent number 8,446,779
- Issue date May 21, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Grant
Channel surface technique for fabrication of FinFET devices
- Patent number 8,349,692
- Issue date Jan 8, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with a floating dielectric region and met...
- Patent number 8,242,559
- Issue date Aug 14, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical transistor device and method of fabrication
- Patent number 8,110,470
- Issue date Feb 7, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain-direct-on-insulator (SDOI) substrate and method of forming
- Patent number 7,998,835
- Issue date Aug 16, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a semiconductor device having embedded epit...
- Patent number 7,994,010
- Issue date Aug 9, 2011
- Chartered Semiconductor Manufacturing Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avoiding plasma charging in integrated circuits
- Patent number 7,846,800
- Issue date Dec 7, 2010
- Chartered Semiconductor Manufacturing, Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system employing grain size enlargement
- Patent number 7,833,888
- Issue date Nov 16, 2010
- Chartered Semiconductor Manufacturing Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for normalizing strain in a semiconductor device
- Patent number 7,816,274
- Issue date Oct 19, 2010
- Chartered Semiconductor Manufacturing Ltd.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End of range (EOR) secondary defect engineering using chemical vapo...
- Patent number 7,400,018
- Issue date Jul 15, 2008
- Chartered Semiconductor Manufacturing Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material architecture for the fabrication of low temperature transi...
- Patent number 7,169,675
- Issue date Jan 30, 2007
- Chartered Semiconductor Manufacturing, Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH STRESSORS
- Publication number 20160035873
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH IMPROVED BREAKDOWN VOLTAGE
- Publication number 20150325697
- Publication date Nov 12, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET
- Publication number 20150069512
- Publication date Mar 12, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH IMPROVED BREAKDOWN VOLTAGE
- Publication number 20140239391
- Publication date Aug 28, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY USING PYRAMIDAL NANOCRYSTALS AS ELECTRON STORAG...
- Publication number 20130328118
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Application
FINFET WITH STRESSORS
- Publication number 20130307038
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND METHOD OF...
- Publication number 20130270654
- Publication date Oct 17, 2013
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES
- Publication number 20130187242
- Publication date Jul 25, 2013
- Globalfoundries Singapore PTE, LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO-ELECTRO-MECHANICAL SYSTEM (NEMS) STRUCTURES ON BULK SUBSTRATES
- Publication number 20120292707
- Publication date Nov 22, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES
- Publication number 20120228676
- Publication date Sep 13, 2012
- Globalfoundries Singapore PTE, LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH IMPROVED BREAKDOWN VOLTAGE
- Publication number 20120228695
- Publication date Sep 13, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH IMPROVED BREAKDOWN VOLTAGE
- Publication number 20120228705
- Publication date Sep 13, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH STRESSORS
- Publication number 20120171832
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET
- Publication number 20120168913
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20120139046
- Publication date Jun 7, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chung Foong TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH BANDGAP MATERIAL AND METHOD OF MANUF...
- Publication number 20120119281
- Publication date May 17, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel methods to reduce gate contact resistance for AC reff reduction
- Publication number 20120038009
- Publication date Feb 16, 2012
- Globalfoundries Singapore PTE, LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with reduced contact resistance and method of...
- Publication number 20120018815
- Publication date Jan 26, 2012
- Globalfoundries Singapore PTE, LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH IMPROVED RETENTION
- Publication number 20110156121
- Publication date Jun 30, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Lee Wee Teo
- B82 - NANO-TECHNOLOGY
Information Patent Application
ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20110049625
- Publication date Mar 3, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Chung Foong TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Publication number 20110044115
- Publication date Feb 24, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory utilizing impact ionization and tunnelling and...
- Publication number 20100315884
- Publication date Dec 16, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH VERTICAL CONTROL GATE AND METHOD OF...
- Publication number 20100304556
- Publication date Dec 2, 2010
- Chartered Semiconductor Manufacturing LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND MET...
- Publication number 20100258868
- Publication date Oct 14, 2010
- Chartered Semiconductor Manufacturing LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM EMPLOYING GRAIN SIZE ENLARGEMENT
- Publication number 20090280629
- Publication date Nov 12, 2009
- Chartered Semiconductor Manufacturing LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR NORMALIZING STRAIN IN A SEMICONDUCTOR DEVICE
- Publication number 20090246920
- Publication date Oct 1, 2009
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING PLASMA CHARGING IN INTEGRATED CIRCUITS
- Publication number 20090224326
- Publication date Sep 10, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Chung Foong TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM EMPLOYING RESISTANCE ALTERING TECHNIQUES
- Publication number 20090221117
- Publication date Sep 3, 2009
- Chartered Semiconductor Manufacturing LTD.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Elimination of STI recess and facet growth in embedded silicon-germ...
- Publication number 20090184341
- Publication date Jul 23, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Yung Fu Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain-direct-on-insulator (SDOI) substrate and method of forming
- Publication number 20090179226
- Publication date Jul 16, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Lee Wee Teo
- H01 - BASIC ELECTRIC ELEMENTS

Chung Foong TAN

Person

Patents Grantslast 30 patents

LDMOS with improved breakdown voltage and with non-uniformed gate d...

FinFET

LDMOS with improved breakdown voltage

FinFET with stressors

LDMOS with two gate stacks having different work functions for impr...

Semiconductor device with reduced contact resistance and method of...

Integrated circuit system employing resistance altering techniques

Channel surface technique for fabrication of FinFET devices

Finfet

Non-volatile memory using pyramidal nanocrystals as electron storag...

LDMOS with improved breakdown voltage

Non-volatile memory utilizing impact ionization and tunnelling and...

Methods to reduce gate contact resistance for AC reff reduction

Asymmetrical transistor device and method of fabrication

Integrated circuit system with bandgap material and method of manuf...

Memory cell with improved retention

Nano-electro-mechanical system (NEMS) structures with actuatable se...

FinFET with stressors

Semiconductor device with reduced contact resistance and method of...

Non-volatile memory using pyramidal nanocrystals as electron storag...

Channel surface technique for fabrication of FinFET devices

Integrated circuit system with a floating dielectric region and met...

Asymmetrical transistor device and method of fabrication

Strain-direct-on-insulator (SDOI) substrate and method of forming

Process for fabricating a semiconductor device having embedded epit...

Avoiding plasma charging in integrated circuits

Integrated circuit system employing grain size enlargement

Methods for normalizing strain in a semiconductor device

End of range (EOR) secondary defect engineering using chemical vapo...

Material architecture for the fabrication of low temperature transi...

Patents Applicationslast 30 patents

FINFET WITH STRESSORS

LDMOS WITH IMPROVED BREAKDOWN VOLTAGE

FINFET

LDMOS WITH IMPROVED BREAKDOWN VOLTAGE

NON-VOLATILE MEMORY USING PYRAMIDAL NANOCRYSTALS AS ELECTRON STORAG...

FINFET WITH STRESSORS

SEMICONDUCTOR DEVICE WITH REDUCED CONTACT RESISTANCE AND METHOD OF...

CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES

NANO-ELECTRO-MECHANICAL SYSTEM (NEMS) STRUCTURES ON BULK SUBSTRATES

CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES

LDMOS WITH IMPROVED BREAKDOWN VOLTAGE

LDMOS WITH IMPROVED BREAKDOWN VOLTAGE

FINFET WITH STRESSORS

FINFET

ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION

INTEGRATED CIRCUIT SYSTEM WITH BANDGAP MATERIAL AND METHOD OF MANUF...

Novel methods to reduce gate contact resistance for AC reff reduction

Semiconductor device with reduced contact resistance and method of...

MEMORY CELL WITH IMPROVED RETENTION

ASYMMETRICAL TRANSISTOR DEVICE AND METHOD OF FABRICATION

Non-volatile memory using pyramidal nanocrystals as electron storag...

Non-volatile memory utilizing impact ionization and tunnelling and...

INTEGRATED CIRCUIT SYSTEM WITH VERTICAL CONTROL GATE AND METHOD OF...

INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND MET...

INTEGRATED CIRCUIT SYSTEM EMPLOYING GRAIN SIZE ENLARGEMENT

METHODS FOR NORMALIZING STRAIN IN A SEMICONDUCTOR DEVICE

AVOIDING PLASMA CHARGING IN INTEGRATED CIRCUITS

INTEGRATED CIRCUIT SYSTEM EMPLOYING RESISTANCE ALTERING TECHNIQUES

Elimination of STI recess and facet growth in embedded silicon-germ...

Strain-direct-on-insulator (SDOI) substrate and method of forming