Chung-Hau Fei

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,768,076
- Issue date Sep 19, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 9,324,622
- Issue date Apr 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming MOS devices with raised source/drain regions
- Patent number 8,889,501
- Issue date Nov 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a sealing structure for high-k metal gate
- Patent number 8,450,161
- Issue date May 28, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a SiGe feature and a metal gate stack
- Patent number 8,373,199
- Issue date Feb 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having metal gate stacks
- Patent number 8,003,467
- Issue date Aug 23, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20160240442
- Publication date Aug 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20140048886
- Publication date Feb 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming MOS Devices with Raised Source/Drain Regions
- Publication number 20130323893
- Publication date Dec 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEALING STRUCTURE FOR HIGH-K METAL GATE AND METHOD OF MAKING
- Publication number 20120225529
- Publication date Sep 6, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Balance Step-Height Selective Bi-Channel Structure on HKMG Devices
- Publication number 20110278646
- Publication date Nov 17, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BALANCE STEP-HEIGHT SELECTIVE BI-CHANNEL STRUCTURE ON HKMG DEVICES
- Publication number 20100109088
- Publication date May 6, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jin-Aun Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE STRUCTURE ON A SAME CHIP FOR HIGH-K METAL GATE TECHNOLOGY
- Publication number 20100052072
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chii-Horng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEALING STRUCTURE FOR HIGH-K METAL GATE AND METHOD OF MAKING
- Publication number 20100044803
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS

Chung-Hau Fei

Person

Patents Grantslast 30 patents

Semiconductor device and method of forming the same

Semiconductor device and method of forming the same

Methods for forming MOS devices with raised source/drain regions

Method of fabricating a sealing structure for high-k metal gate

Semiconductor device having a SiGe feature and a metal gate stack

Method for making a semiconductor device having metal gate stacks

Patents Applicationslast 30 patents

Semiconductor Device and Method of Forming the Same

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Methods for Forming MOS Devices with Raised Source/Drain Regions

SEALING STRUCTURE FOR HIGH-K METAL GATE AND METHOD OF MAKING

Balance Step-Height Selective Bi-Channel Structure on HKMG Devices

BALANCE STEP-HEIGHT SELECTIVE BI-CHANNEL STRUCTURE ON HKMG DEVICES

DUAL GATE STRUCTURE ON A SAME CHIP FOR HIGH-K METAL GATE TECHNOLOGY

SEALING STRUCTURE FOR HIGH-K METAL GATE AND METHOD OF MAKING