Chungho Lee

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual storage node memory
- Patent number 9,461,151
- Issue date Oct 4, 2016
- Cyress Semiconductor Corporation
- Fred T. K. Cheung
- G11 - INFORMATION STORAGE
Information Patent Grant
Oro and orpro with bit line trench to suppress transport program di...
- Patent number 9,245,895
- Issue date Jan 26, 2016
- Cypress Semiconductor Corporation
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating memory cells having split charge storage nodes
- Patent number 9,159,568
- Issue date Oct 13, 2015
- Cypress Semiconductor Corporation
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual storage node memory
- Patent number 8,564,042
- Issue date Oct 22, 2013
- Spansion LLC
- Fred Cheung
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate replacement with top oxide regrowth for the top oxide improvement
- Patent number 8,455,268
- Issue date Jun 4, 2013
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial nitride and gate replacement
- Patent number 8,329,598
- Issue date Dec 11, 2012
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual charge storage node memory device and methods for fabricating...
- Patent number 8,183,623
- Issue date May 22, 2012
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory comprising dual charge storage nodes and metho...
- Patent number 8,076,712
- Issue date Dec 13, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split charge storage node outer spacer process
- Patent number 8,039,891
- Issue date Oct 18, 2011
- Spansion LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ORO and ORPRO with bit line trench to suppress transport program di...
- Patent number 8,012,830
- Issue date Sep 6, 2011
- Spansion LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial nitride and gate replacement
- Patent number 7,981,745
- Issue date Jul 19, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SI trench between bitline HDP for BVDSS improvement
- Patent number 7,951,675
- Issue date May 31, 2011
- Spansion LLC
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual charge storage node memory device and methods for fabricating...
- Patent number 7,915,123
- Issue date Mar 29, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split charge storage node outer spacer process
- Patent number 7,883,963
- Issue date Feb 8, 2011
- Spansion LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split charge storage node inner spacer process
- Patent number 7,829,936
- Issue date Nov 9, 2010
- Spansion LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple poly-si replacement scheme for memory devices
- Patent number 7,807,580
- Issue date Oct 5, 2010
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory comprising dual charge storage nodes and metho...
- Patent number 7,767,517
- Issue date Aug 3, 2010
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a split charge storage node semiconductor m...
- Patent number 7,666,739
- Issue date Feb 23, 2010
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having implanted oxide to block electron drift, and m...
- Patent number 7,622,373
- Issue date Nov 24, 2009
- Spansion LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods for its fabrication
- Patent number 7,564,091
- Issue date Jul 21, 2009
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods for its fabrication
- Patent number 7,432,156
- Issue date Oct 7, 2008
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL STORAGE NODE MEMORY
- Publication number 20140024190
- Publication date Jan 23, 2014
- SPANSION LLC
- Fred CHEUNG
- G11 - INFORMATION STORAGE
Information Patent Application
ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...
- Publication number 20110278660
- Publication date Nov 17, 2011
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL NITRIDE AND GATE REPLACEMENT
- Publication number 20110237060
- Publication date Sep 29, 2011
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CHARGE STORAGE NODE MEMORY DEVICE AND METHODS FOR FABRICATING...
- Publication number 20110175158
- Publication date Jul 21, 2011
- Chungho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS
- Publication number 20110095355
- Publication date Apr 28, 2011
- SPANSION LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...
- Publication number 20100283100
- Publication date Nov 11, 2010
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SI TRENCH BETWEEN BITLINE HDP FOR BVDSS IMPROVEMENT
- Publication number 20090152669
- Publication date Jun 18, 2009
- SPANSION LLC
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS
- Publication number 20090108330
- Publication date Apr 30, 2009
- SPANSION LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS
- Publication number 20090101963
- Publication date Apr 23, 2009
- SPANSION LLC
- Minghao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL NITRIDE AND GATE REPLACEMENT
- Publication number 20090061650
- Publication date Mar 5, 2009
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT
- Publication number 20090061631
- Publication date Mar 5, 2009
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...
- Publication number 20090039405
- Publication date Feb 12, 2009
- SPANSION LLC
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHODS FOR ITS FABRICATION
- Publication number 20080315290
- Publication date Dec 25, 2008
- Chungho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE POLY-SI REPLACEMENT SCHEME FOR MEMORY DEVICES
- Publication number 20080268650
- Publication date Oct 30, 2008
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING IMPLANTED OXIDE TO BLOCK ELECTRON DRIFT, AND M...
- Publication number 20080150001
- Publication date Jun 26, 2008
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING A SPLIT CHARGE STORAGE NODE SEMICONDUCTOR M...
- Publication number 20080153222
- Publication date Jun 26, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...
- Publication number 20080149999
- Publication date Jun 26, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cells having split charge storage nodes and methods for fabr...
- Publication number 20080142875
- Publication date Jun 19, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual charge storage node with undercut gate oxide for deep sub-micr...
- Publication number 20080061359
- Publication date Mar 13, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual storage node memory
- Publication number 20070205454
- Publication date Sep 6, 2007
- Fred Cheung
- G11 - INFORMATION STORAGE

Chungho Lee

Person

Patents Grantslast 30 patents

Dual storage node memory

Oro and orpro with bit line trench to suppress transport program di...

Method for fabricating memory cells having split charge storage nodes

Dual storage node memory

Gate replacement with top oxide regrowth for the top oxide improvement

Sacrificial nitride and gate replacement

Dual charge storage node memory device and methods for fabricating...

Semiconductor memory comprising dual charge storage nodes and metho...

Split charge storage node outer spacer process

ORO and ORPRO with bit line trench to suppress transport program di...

Sacrificial nitride and gate replacement

SI trench between bitline HDP for BVDSS improvement

Dual charge storage node memory device and methods for fabricating...

Split charge storage node outer spacer process

Split charge storage node inner spacer process

Triple poly-si replacement scheme for memory devices

Semiconductor memory comprising dual charge storage nodes and metho...

Methods for fabricating a split charge storage node semiconductor m...

Memory device having implanted oxide to block electron drift, and m...

Memory device and methods for its fabrication

Memory device and methods for its fabrication

Patents Applicationslast 30 patents

DUAL STORAGE NODE MEMORY

ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...

SACRIFICIAL NITRIDE AND GATE REPLACEMENT

DUAL CHARGE STORAGE NODE MEMORY DEVICE AND METHODS FOR FABRICATING...

SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS

SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...

SI TRENCH BETWEEN BITLINE HDP FOR BVDSS IMPROVEMENT

SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS

SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS

SACRIFICIAL NITRIDE AND GATE REPLACEMENT

GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT

ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DI...

MEMORY DEVICE AND METHODS FOR ITS FABRICATION

TRIPLE POLY-SI REPLACEMENT SCHEME FOR MEMORY DEVICES

MEMORY DEVICE HAVING IMPLANTED OXIDE TO BLOCK ELECTRON DRIFT, AND M...

METHODS FOR FABRICATING A SPLIT CHARGE STORAGE NODE SEMICONDUCTOR M...

SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...

Memory cells having split charge storage nodes and methods for fabr...

Dual charge storage node with undercut gate oxide for deep sub-micr...

Dual storage node memory