Chunshan Yin

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Fingered capacitor with low-k and ultra-low-k dielectric layers
- Patent number 11,404,532
- Issue date Aug 2, 2022
- NXP B.V.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fingered capacitor with low-K and ultra-low-K dielectric layers
- Patent number 10,770,539
- Issue date Sep 8, 2020
- NXP B.V.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated diode having fingers with elevated gates
- Patent number 10,680,087
- Issue date Jun 9, 2020
- NXP B.V.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to tune narrow width effect with raised S/D structure
- Patent number 9,281,308
- Issue date Mar 8, 2016
- Globalfoundries Singapore Pte., Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control gate
- Patent number 9,087,813
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Patent number 8,824,208
- Issue date Sep 2, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to tune narrow width effect with raised S/D structure
- Patent number 8,785,287
- Issue date Jul 22, 2014
- GLOBALFOUNDRIES Singapore Pte, Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with novel body contact for multiple Vt applications
- Patent number 8,735,984
- Issue date May 27, 2014
- GLOBALFOUNDRIES Singapore Pte, Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate device
- Patent number 8,691,638
- Issue date Apr 8, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to reduce gate contact resistance for AC reff reduction
- Patent number 8,674,457
- Issue date Mar 18, 2014
- Globalfoundries Singapore Pte., Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control gate
- Patent number 8,647,946
- Issue date Feb 11, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Modifying growth rate of a device layer
- Patent number 8,633,081
- Issue date Jan 21, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with bandgap material and method of manuf...
- Patent number 8,563,386
- Issue date Oct 22, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with improved retention
- Patent number 8,530,310
- Issue date Sep 10, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lee Wee Teo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Patent number 8,446,779
- Issue date May 21, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit system with a floating dielectric region and met...
- Patent number 8,242,559
- Issue date Aug 14, 2012
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avoiding plasma charging in integrated circuits
- Patent number 7,846,800
- Issue date Dec 7, 2010
- Chartered Semiconductor Manufacturing, Ltd.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINGERED CAPACITOR WITH LOW-K AND ULTRA-LOW-K DIELECTRIC LAYERS
- Publication number 20200357881
- Publication date Nov 12, 2020
- NXP B.V.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINGERED CAPACITOR WITH LOW-K AND ULTRA-LOW-K DIELECTRIC LAYERS
- Publication number 20200098850
- Publication date Mar 26, 2020
- NXP B.V.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED DIODE HAVING FINGERS WITH ELEVATED GATES
- Publication number 20200075751
- Publication date Mar 5, 2020
- NXP B.V.
- Cheong Min Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO TUNE NARROW WIDTH EFFECT WITH RAISED S/D STRUCTURE
- Publication number 20140332902
- Publication date Nov 13, 2014
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL GATE
- Publication number 20140151775
- Publication date Jun 5, 2014
- GLOBAL FOUNDRIES SINGAPORE PTE LTD.
- Shyue Seng TAN
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MEMORY USING PYRAMIDAL NANOCRYSTALS AS ELECTRON STORAG...
- Publication number 20130328118
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFYING GROWTH RATE OF A DEVICE LAYER
- Publication number 20120168895
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chunshan YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE DEVICE
- Publication number 20120146160
- Publication date Jun 14, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH BANDGAP MATERIAL AND METHOD OF MANUF...
- Publication number 20120119281
- Publication date May 17, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel methods to reduce gate contact resistance for AC reff reduction
- Publication number 20120038009
- Publication date Feb 16, 2012
- Globalfoundries Singapore PTE, LTD.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET with novel body contact for multiple Vt applications
- Publication number 20120007180
- Publication date Jan 12, 2012
- Globalfoundries Singapore PTE, LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method to tune narrow width effect with raised S/D structure
- Publication number 20120007185
- Publication date Jan 12, 2012
- Globalfoundries Singapore PTE, LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH IMPROVED RETENTION
- Publication number 20110156121
- Publication date Jun 30, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Lee Wee Teo
- B82 - NANO-TECHNOLOGY
Information Patent Application
CONTROL GATE
- Publication number 20110115009
- Publication date May 19, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Shyue Seng TAN
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-volatile memory using pyramidal nanocrystals as electron storag...
- Publication number 20110044115
- Publication date Feb 24, 2011
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Elgin Quek
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH VERTICAL CONTROL GATE AND METHOD OF...
- Publication number 20100304556
- Publication date Dec 2, 2010
- Chartered Semiconductor Manufacturing LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND MET...
- Publication number 20100258868
- Publication date Oct 14, 2010
- Chartered Semiconductor Manufacturing LTD.
- Chunshan Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING PLASMA CHARGING IN INTEGRATED CIRCUITS
- Publication number 20090224326
- Publication date Sep 10, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Chung Foong TAN
- H01 - BASIC ELECTRIC ELEMENTS

Chunshan Yin

Person

Patents Grantslast 30 patents

Fingered capacitor with low-k and ultra-low-k dielectric layers

Fingered capacitor with low-K and ultra-low-K dielectric layers

Gated diode having fingers with elevated gates

Method to tune narrow width effect with raised S/D structure

Control gate

Non-volatile memory using pyramidal nanocrystals as electron storag...

Method to tune narrow width effect with raised S/D structure

FinFET with novel body contact for multiple Vt applications

High-K metal gate device

Methods to reduce gate contact resistance for AC reff reduction

Control gate

Modifying growth rate of a device layer

Integrated circuit system with bandgap material and method of manuf...

Memory cell with improved retention

Non-volatile memory using pyramidal nanocrystals as electron storag...

Integrated circuit system with a floating dielectric region and met...

Avoiding plasma charging in integrated circuits

Patents Applicationslast 30 patents

FINGERED CAPACITOR WITH LOW-K AND ULTRA-LOW-K DIELECTRIC LAYERS

FINGERED CAPACITOR WITH LOW-K AND ULTRA-LOW-K DIELECTRIC LAYERS

GATED DIODE HAVING FINGERS WITH ELEVATED GATES

NOVEL METHOD TO TUNE NARROW WIDTH EFFECT WITH RAISED S/D STRUCTURE

CONTROL GATE

NON-VOLATILE MEMORY USING PYRAMIDAL NANOCRYSTALS AS ELECTRON STORAG...

MODIFYING GROWTH RATE OF A DEVICE LAYER

HIGH-K METAL GATE DEVICE

INTEGRATED CIRCUIT SYSTEM WITH BANDGAP MATERIAL AND METHOD OF MANUF...

Novel methods to reduce gate contact resistance for AC reff reduction

FinFET with novel body contact for multiple Vt applications

Novel method to tune narrow width effect with raised S/D structure

MEMORY CELL WITH IMPROVED RETENTION

CONTROL GATE

Non-volatile memory using pyramidal nanocrystals as electron storag...

INTEGRATED CIRCUIT SYSTEM WITH VERTICAL CONTROL GATE AND METHOD OF...

INTEGRATED CIRCUIT SYSTEM WITH A FLOATING DIELECTRIC REGION AND MET...

AVOIDING PLASMA CHARGING IN INTEGRATED CIRCUITS