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Shanghai, CN
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last 30 patents
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Patent Grant
Method of making CMOS image sensor-hybrid silicide
Patent number
7,932,127
Issue date
Apr 26, 2011
Semiconductor Manufacturing International (Shanghai) Corporation
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and device for CMOS image sensing with separate source forma...
Patent number
7,582,522
Issue date
Sep 1, 2009
Semiconductor Manufacturing International (Shanghai) Corporation
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method and device for CMOS image sensing with separate source forma...
Patent number
7,335,546
Issue date
Feb 26, 2008
Semiconductor Manufacturing International (Shanghai) Corporation
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
METHOD OF MAKING CMOS IMAGE SENSOR-HYBRID SILICIDE
Publication number
20100136737
Publication date
Jun 3, 2010
Semiconductor Manufacturing International
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method and Device for CMOS Image Sensing with Separate Source Forma...
Publication number
20080128770
Publication date
Jun 5, 2008
Semiconductor Manufacturing International (Shanghai) Corporation
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method and device for CMOS image sensing with separate source forma...
Publication number
20060292730
Publication date
Dec 28, 2006
Semiconductor Manufacturing International (Shanghai) Corporation
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of making CMOS image sensor - hybrid silicide
Publication number
20060275945
Publication date
Dec 7, 2006
Semiconductor Manufacturing Int'l (Shanghai) Corporation
Jianping Yang
H01 - BASIC ELECTRIC ELEMENTS