Chunyao Wang

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,176,349
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 12,148,813
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of modulating stress of dielectric layers
- Patent number 12,125,911
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gapfill structure and manufacturing methods thereof
- Patent number 12,002,719
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 11,955,370
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Cyuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,942,549
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern formation through mask stress management and resulting stru...
- Patent number 11,935,746
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor patterning and resulting structures
- Patent number 11,929,254
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Ming Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium hump reduction
- Patent number 11,854,819
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming low-stress silicon nitride layer through hydrogen treatment
- Patent number 11,830,727
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,764,221
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,721,699
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with fin str...
- Patent number 11,688,645
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 11,652,158
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gapfill structure and manufacturing methods thereof
- Patent number 11,557,518
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gapfill structure and manufacturing methods thereof
- Patent number 11,532,523
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,527,653
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor patterning and resulting structures
- Patent number 11,521,856
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Ming Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress modulation for dielectric layers
- Patent number 11,502,196
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium hump reduction
- Patent number 11,437,245
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming low-stress silicon nitride layer through hydrogen treatment
- Patent number 11,393,674
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 11,380,776
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,867,807
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jie Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k gate spacer and formation thereof
- Patent number 10,854,521
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Cyuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress modulation for dielectric layers
- Patent number 10,720,526
- Issue date Jul 21, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K gate spacer and formation thereof
- Patent number 10,510,612
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Cyuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k gate spacer and formation thereof
- Patent number 10,483,168
- Issue date Nov 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Cyuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,134,604
- Issue date Nov 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Jie Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS
- Publication number 20240387729
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20240387697
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT
- Publication number 20240379346
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAPFILL STRUCTURE AND MANUFACTURING METHODS THEREOF
- Publication number 20240274476
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240258100
- Publication date Aug 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240204104
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Photolithography Methods and Resulting Structures
- Publication number 20240186142
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Patterning and Resulting Structures
- Publication number 20240177995
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Ming Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment
- Publication number 20230386826
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230326927
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN STRUCTURES
- Publication number 20230282521
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20230282731
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Modulation Using STI Capping Layer for Reducing Fin Bending
- Publication number 20230187265
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230163197
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20230154746
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Yi KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structure And Method For Forming The Same
- Publication number 20230119827
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gapfill Structure and Manufacturing Methods Thereof
- Publication number 20230122981
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Patterning and Resulting Structures
- Publication number 20230108424
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Ming Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230103640
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STR...
- Publication number 20220406663
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Modulation for Dielectric Layers
- Publication number 20220384649
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium Hump Reduction
- Publication number 20220375756
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20220336628
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment
- Publication number 20220336202
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pattern Formation Through Mask Stress Management and Resulting Stru...
- Publication number 20220293413
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220262649
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PATTERNING AND RESULTING STRUCTURES
- Publication number 20220102142
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Ming Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE
- Publication number 20220102527
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium Hump Reduction
- Publication number 20220102151
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAPFILL STRUCTURE AND MANUFACTURING METHODS THEREOF
- Publication number 20220051950
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-En Lin
- H01 - BASIC ELECTRIC ELEMENTS

Chunyao Wang

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacture

Field-effect transistor device with gate spacer structure

Method of modulating stress of dielectric layers

Gapfill structure and manufacturing methods thereof

Semiconductor devices and methods of manufacture

Semiconductor device and method of manufacture

Pattern formation through mask stress management and resulting stru...

Semiconductor patterning and resulting structures

Germanium hump reduction

Forming low-stress silicon nitride layer through hydrogen treatment

Semiconductor device and method of manufacture

Semiconductor device and method of manufacture

Structure and formation method of semiconductor device with fin str...

Field-effect transistor device with gate spacer structure

Gapfill structure and manufacturing methods thereof

Gapfill structure and manufacturing methods thereof

Semiconductor device and method of manufacture

Semiconductor patterning and resulting structures

Stress modulation for dielectric layers

Germanium hump reduction

Forming low-stress silicon nitride layer through hydrogen treatment

Field-effect transistor device with gate spacer structure

Semiconductor device and method

Low-k gate spacer and formation thereof

Stress modulation for dielectric layers

Low-K gate spacer and formation thereof

Low-k gate spacer and formation thereof

Semiconductor device and method

Patents Applicationslast 30 patents

METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT

GAPFILL STRUCTURE AND MANUFACTURING METHODS THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Photolithography Methods and Resulting Structures

Semiconductor Patterning and Resulting Structures

Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment

Semiconductor Device and Method of Manufacture

SEMICONDUCTOR DEVICE WITH FIN STRUCTURES

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

Stress Modulation Using STI Capping Layer for Reducing Fin Bending

Semiconductor Device and Method of Manufacture

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Semiconductor Device Structure And Method For Forming The Same

Gapfill Structure and Manufacturing Methods Thereof

Semiconductor Patterning and Resulting Structures

Semiconductor Device and Method of Manufacture

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH FIN STR...

Stress Modulation for Dielectric Layers

Germanium Hump Reduction

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment

Pattern Formation Through Mask Stress Management and Resulting Stru...

Semiconductor Device and Method

SEMICONDUCTOR PATTERNING AND RESULTING STRUCTURES

FIELD-EFFECT TRANSISTOR DEVICE WITH GATE SPACER STRUCTURE

Germanium Hump Reduction

GAPFILL STRUCTURE AND MANUFACTURING METHODS THEREOF