Churamani GAIRE

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming defect-free relaxed SiGe fins
- Patent number 9,882,052
- Issue date Jan 30, 2018
- GLOBALFOUNDRIES Inc.
- Robert Judson Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for selectively forming a layer of increased dopant concent...
- Patent number 9,349,864
- Issue date May 24, 2016
- GLOBALFOUNDRIES, INC.
- Timothy James Mcardle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming finFETs with self aligned fin formation
- Patent number 9,147,696
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMING DEFECT-FREE RELAXED SiGe FINS
- Publication number 20180130656
- Publication date May 10, 2018
- GLOBALFOUNDRIES INC.
- Judson Robert Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DEFECT-FREE RELAXED SIGE FINS
- Publication number 20180006155
- Publication date Jan 4, 2018
- GLOBALFOUNDRIES INC.
- Robert Judson HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150333067
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE
- Publication number 20150255353
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...
- Publication number 20150214345
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FIN STRUCTURES AND METHODS OF FABRICATION
- Publication number 20150194307
- Publication date Jul 9, 2015
- GLOBALFOUNDRIES INC.
- Churamani GAIRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150091094
- Publication date Apr 2, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS

Churamani GAIRE

Person

Patents Grantslast 30 patents

Forming defect-free relaxed SiGe fins

Methods for selectively forming a layer of increased dopant concent...

Devices and methods of forming finFETs with self aligned fin formation

Patents Applicationslast 30 patents

FORMING DEFECT-FREE RELAXED SiGe FINS

FORMING DEFECT-FREE RELAXED SIGE FINS

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION

FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE

DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...

STRAINED FIN STRUCTURES AND METHODS OF FABRICATION

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION