Chwan-Ying Lee

Person

Tainan, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide semiconductor device and manufacturing method thereof
- Patent number 11,615,959
- Issue date Mar 28, 2023
- HESTIA POWER SHANGHAI TECHNOLOGY INC.
- Lurng-Shehng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device, driving circuit and control method
- Patent number 11,184,003
- Issue date Nov 23, 2021
- SHANGHAI HESTIA POWER INC.
- Fu-Jen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device, driving circuit and control method
- Patent number 11,108,388
- Issue date Aug 31, 2021
- Shanghai Hestia Power, Inc.
- Fu-Jen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 10,497,777
- Issue date Dec 3, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,483,389
- Issue date Nov 19, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,418,476
- Issue date Sep 17, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intelligent power module operable to be driven by negative gate vol...
- Patent number 10,396,774
- Issue date Aug 27, 2019
- Hestia Power Inc.
- Chien-Chung Hung
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide semiconductor element and manufacturing method thereof
- Patent number 10,020,368
- Issue date Jul 10, 2018
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor device with adjustable voltage level
- Patent number 9,761,703
- Issue date Sep 12, 2017
- Hestia Power Inc.
- Fu-Jen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field effect transistor
- Patent number 9,685,552
- Issue date Jun 20, 2017
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacture thereof
- Patent number 9,373,713
- Issue date Jun 21, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC junction barrier controlled schottky rectifier
- Patent number 9,368,650
- Issue date Jun 14, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,246,016
- Issue date Jan 26, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated device having MOSFET cell array embedded with barrier Sc...
- Patent number 9,209,293
- Issue date Dec 8, 2015
- Industrial Technology Research Institute
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power device equipped with termination structure
- Patent number 9,018,640
- Issue date Apr 28, 2015
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode and fabricating method thereof
- Patent number 8,956,963
- Issue date Feb 17, 2015
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier device having a plurality of double-recessed trenches
- Patent number 8,878,327
- Issue date Nov 4, 2014
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped trench MOSFET and method of fabricating the same
- Patent number 8,841,721
- Issue date Sep 23, 2014
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS transistor having a trench doped region formed deeper th...
- Patent number 8,835,935
- Issue date Sep 16, 2014
- Industrial Technology Research Institute
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-based trench-type schottky device
- Patent number 8,766,279
- Issue date Jul 1, 2014
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating a thin film bulk acoustic reso...
- Patent number 6,794,212
- Issue date Sep 21, 2004
- Winbond Electronics Corp.
- Chwan-Ying Lee
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of electroless plating copper on nitride barrier
- Patent number 6,713,377
- Issue date Mar 30, 2004
- Industrial Technology Research Institute
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of electroless plating copper on nitride barrier
- Patent number 6,660,625
- Issue date Dec 9, 2003
- Industrial Technology Research Institute
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating epitaxy base bipolar transistor
- Patent number 6,589,849
- Issue date Jul 8, 2003
- Chwan-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of electroless plating copper on nitride barrier
- Patent number 6,436,816
- Issue date Aug 20, 2002
- Industrial Technology Research Institute
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nickel-silicide formation by electroless Ni deposition on polysilicon
- Patent number 6,406,743
- Issue date Jun 18, 2002
- Industrial Technology Research Institute
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming SiGe bipolar transistor
- Patent number 6,333,235
- Issue date Dec 25, 2001
- Industrial TechnologyResearch Institute
- Chwan-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial depostion technology
- Patent number 6,228,733
- Issue date May 8, 2001
- Industrial Technology Research Institute
- Chwan-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for a single polysilicon layer, bipolar junctio...
- Patent number 6,180,478
- Issue date Jan 30, 2001
- Industrial Technology Research Institute
- Chwan-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper metallization of USLI by electroless process
- Patent number 6,180,523
- Issue date Jan 30, 2001
- Industrial Technology Research Institute
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230064733
- Publication date Mar 2, 2023
- Hestia Power Shanghai Technology Inc.
- Lurng-Shehng LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBRIDE POWER DEVICE, DRIVING CIRCUIT AND CONTROL METHOD
- Publication number 20210273637
- Publication date Sep 2, 2021
- SHANGHAI HESTIA POWER INC.
- Fu-Jen HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE, DRIVING CIRCUIT AND CONTROL METHOD
- Publication number 20210273636
- Publication date Sep 2, 2021
- SHANGHAI HESTIA POWER INC.
- Fu-Jen HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTELLIGENT POWER MODULE OPERABLE TO BE DRIVEN BY NEGATIVE GATE VOL...
- Publication number 20190181849
- Publication date Jun 13, 2019
- Hestia Power Inc.
- Chien-Chung Hung
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20190081136
- Publication date Mar 14, 2019
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20170250275
- Publication date Aug 31, 2017
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20170207305
- Publication date Jul 20, 2017
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20160141412
- Publication date May 19, 2016
- Hestia Power Inc.
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE FIELD EFFECT TRANSISTOR
- Publication number 20160126346
- Publication date May 5, 2016
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160111533
- Publication date Apr 21, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160005883
- Publication date Jan 7, 2016
- Hestia Power Inc.
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20150287818
- Publication date Oct 8, 2015
- ACREO SWEDISH ICT AB
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE EQUIPPED WITH TERMINATION STRUCTURE
- Publication number 20150102362
- Publication date Apr 16, 2015
- Hestia Power Inc.
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC-BASED TRENCH-TYPE SCHOTTKY DEVICE
- Publication number 20140175457
- Publication date Jun 26, 2014
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICE HAVING MOSFET CELL ARRAY EMBEDDED WITH BARRIER SC...
- Publication number 20140175559
- Publication date Jun 26, 2014
- Industrial Technology Research Institute
- Chien-Chung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEPPED TRENCH MOSFET AND METHOD OF FABRICATING THE SAME
- Publication number 20140167151
- Publication date Jun 19, 2014
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRENCH GATE TRANSISTOR WITH SEGMENTED FIELD SHIELDING REGION AN...
- Publication number 20140159053
- Publication date Jun 12, 2014
- Industrial Technology Research Institute
- Young-Shying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Barrier Diode and Fabricating Method Thereof
- Publication number 20140145207
- Publication date May 29, 2014
- Cheng-Tyng YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-RECESSED TRENCH SCHOTTKY BARRIER DEVICE
- Publication number 20140001489
- Publication date Jan 2, 2014
- Industrial Technology Research Institute
- Cheng-Tyng Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURIN...
- Publication number 20130161736
- Publication date Jun 27, 2013
- Industrial Technology Research Institute
- Chien-Chung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-D MULTI-WAFER STACKED SEMICONDUCTOR STRUCTURE AND METHOD FOR MANU...
- Publication number 20110057321
- Publication date Mar 10, 2011
- Industrial Technology Research Institute
- Sum-Min Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of electroless plating copper on nitride barrier
- Publication number 20030060040
- Publication date Mar 27, 2003
- INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of electroless plating copper on nitride barrier
- Publication number 20030054633
- Publication date Mar 20, 2003
- INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Chwan-Ying Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and apparatus for fabricating a thin film bulk acoustic reso...
- Publication number 20030003612
- Publication date Jan 2, 2003
- Chwan-Ying Lee
- H03 - BASIC ELECTRONIC CIRCUITRY

Chwan-Ying Lee

Person

Patents Grantslast 30 patents

Silicon carbide semiconductor device and manufacturing method thereof

Silicon carbide power device, driving circuit and control method

Silicon carbide power device, driving circuit and control method

Semiconductor power device

Silicon carbide semiconductor device

Silicon carbide semiconductor device

Intelligent power module operable to be driven by negative gate vol...

Silicon carbide semiconductor element and manufacturing method thereof

Wide bandgap semiconductor device with adjustable voltage level

Silicon carbide field effect transistor

Silicon carbide semiconductor device and method of manufacture thereof

SiC junction barrier controlled schottky rectifier

Silicon carbide semiconductor device

Integrated device having MOSFET cell array embedded with barrier Sc...

Silicon carbide power device equipped with termination structure

Schottky barrier diode and fabricating method thereof

Schottky barrier device having a plurality of double-recessed trenches

Stepped trench MOSFET and method of fabricating the same

Trench MOS transistor having a trench doped region formed deeper th...

SiC-based trench-type schottky device

Method and apparatus for fabricating a thin film bulk acoustic reso...

Method of electroless plating copper on nitride barrier

Method of electroless plating copper on nitride barrier

Method for fabricating epitaxy base bipolar transistor

Method of electroless plating copper on nitride barrier

Nickel-silicide formation by electroless Ni deposition on polysilicon

Method for forming SiGe bipolar transistor

Non-selective epitaxial depostion technology

Fabrication process for a single polysilicon layer, bipolar junctio...

Copper metallization of USLI by electroless process

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBRIDE POWER DEVICE, DRIVING CIRCUIT AND CONTROL METHOD

SILICON CARBIDE POWER DEVICE, DRIVING CIRCUIT AND CONTROL METHOD

INTELLIGENT POWER MODULE OPERABLE TO BE DRIVEN BY NEGATIVE GATE VOL...

SEMICONDUCTOR POWER DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

SILICON CARBIDE FIELD EFFECT TRANSISTOR

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE

SILICON CARBIDE POWER DEVICE EQUIPPED WITH TERMINATION STRUCTURE

SIC-BASED TRENCH-TYPE SCHOTTKY DEVICE

INTEGRATED DEVICE HAVING MOSFET CELL ARRAY EMBEDDED WITH BARRIER SC...

STEPPED TRENCH MOSFET AND METHOD OF FABRICATING THE SAME

SIC TRENCH GATE TRANSISTOR WITH SEGMENTED FIELD SHIELDING REGION AN...

Schottky Barrier Diode and Fabricating Method Thereof

DOUBLE-RECESSED TRENCH SCHOTTKY BARRIER DEVICE

TRENCH METAL OXIDE SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURIN...

3-D MULTI-WAFER STACKED SEMICONDUCTOR STRUCTURE AND METHOD FOR MANU...

Method of electroless plating copper on nitride barrier

Method of electroless plating copper on nitride barrier

Method and apparatus for fabricating a thin film bulk acoustic reso...