Chyi-Chyuan Huang

Person

Taipei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with reliable high-voltage gate oxide and meth...
- Patent number 8,669,150
- Issue date Mar 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chyi-Chyuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 8,389,341
- Issue date Mar 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reliable high-voltage gate oxide and meth...
- Patent number 8,338,243
- Issue date Dec 25, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chyi-Chyuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,989,890
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reliable high-voltage gate oxide and meth...
- Patent number 7,960,810
- Issue date Jun 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chyi-Chyuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilizing breakdown voltages by forming tunnels for ultra-high vo...
- Patent number 7,768,071
- Issue date Aug 3, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR DETECTING AND ANALYZING OBJECTS
- Publication number 20220230443
- Publication date Jul 21, 2022
- MICROMAX INTERNATIONAL CORP.
- KAI-LUNG HUA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20120003803
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Reliable High-Voltage Gate Oxide and Meth...
- Publication number 20110212585
- Publication date Sep 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chyi-Chyuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...
- Publication number 20100006933
- Publication date Jan 14, 2010
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels
- Publication number 20100006935
- Publication date Jan 14, 2010
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20090001462
- Publication date Jan 1, 2009
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with reliable high-voltage gate oxide and meth...
- Publication number 20080054399
- Publication date Mar 6, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chyi-Chyuan Huang
- H01 - BASIC ELECTRIC ELEMENTS

Chyi-Chyuan Huang

Person

Patents Grantslast 30 patents

Semiconductor device with reliable high-voltage gate oxide and meth...

Lateral power MOSFET with high breakdown voltage and low on-resistance

Semiconductor device with reliable high-voltage gate oxide and meth...

Lateral power MOSFET with high breakdown voltage and low on-resistance

Semiconductor device with reliable high-voltage gate oxide and meth...

Stabilizing breakdown voltages by forming tunnels for ultra-high vo...

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR DETECTING AND ANALYZING OBJECTS

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

Semiconductor Device with Reliable High-Voltage Gate Oxide and Meth...

Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...

Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

Semiconductor device with reliable high-voltage gate oxide and meth...