Clemens Ostermaier

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,159,918
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with improved leakage
- Patent number 11,557,670
- Issue date Jan 17, 2023
- Infineon Technologies Austria AG
- Christian Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device and method of fabricating...
- Patent number 11,349,012
- Issue date May 31, 2022
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor having a buried field plate
- Patent number 11,114,554
- Issue date Sep 7, 2021
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,600,710
- Issue date Mar 24, 2020
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertical potential short in a periphery region...
- Patent number 10,304,923
- Issue date May 28, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and method
- Patent number 10,199,216
- Issue date Feb 5, 2019
- Infineon Technologies Austria AG
- Clemens Ostermaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 10,177,061
- Issue date Jan 8, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of conditioning an etch chamber for contaminant free etching...
- Patent number 10,128,133
- Issue date Nov 13, 2018
- Infineon Technologies Austria AG
- Andreas Haghofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor probe test card with integrated hall measurement feat...
- Patent number 10,126,355
- Issue date Nov 13, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- G01 - MEASURING TESTING
Information Patent Grant
Non-planar normally off compound semiconductor device
- Patent number 10,090,406
- Issue date Oct 2, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical potential short in the periphery region of a III-nitride s...
- Patent number 10,038,051
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with carrier injection mitigation...
- Patent number 10,038,085
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a test structure formed in a group I...
- Patent number 9,947,600
- Issue date Apr 17, 2018
- Infineon Technologies Austria AG
- Franz Heider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,847,394
- Issue date Dec 19, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor having a multi-...
- Patent number 9,837,520
- Issue date Dec 5, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride bidirectional device
- Patent number 9,837,522
- Issue date Dec 5, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and methods
- Patent number 9,728,470
- Issue date Aug 8, 2017
- Infineon Technologies Austria AG
- Franz Heider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor having a buried field plate
- Patent number 9,728,630
- Issue date Aug 8, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures for compound semiconductor devices
- Patent number 9,666,705
- Issue date May 30, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor having a hetero...
- Patent number 9,647,104
- Issue date May 9, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 9,590,048
- Issue date Mar 7, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment of semiconductor substrate using free radical sta...
- Patent number 9,515,162
- Issue date Dec 6, 2016
- Infineon Technologies Austria AG
- Maria Reiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing HEMTs with an integrated Schottky diode
- Patent number 9,412,834
- Issue date Aug 9, 2016
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-channel HEMT
- Patent number 9,349,829
- Issue date May 24, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor
- Patent number 9,337,279
- Issue date May 10, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a high breakdown voltage III-nitride device
- Patent number 9,263,545
- Issue date Feb 16, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage cascaded diode with HEMT and monolithically integrated...
- Patent number 9,142,550
- Issue date Sep 22, 2015
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage III-nitride device
- Patent number 9,076,763
- Issue date Jul 7, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride-based enhancement mode transistor
- Patent number 9,048,303
- Issue date Jun 2, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Multi-Channel High Electron Mobility Transistor with Reduced Input...
- Publication number 20240304670
- Publication date Sep 12, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE TRANSISTOR DEVICE
- Publication number 20240170487
- Publication date May 23, 2024
- Infineon Technologies Austria AG
- Bhargav Pandya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Type III-V Semiconductor Device with Improved Leakage
- Publication number 20220285539
- Publication date Sep 8, 2022
- Infineon Technologies Austria AG
- Christian Koller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device
- Publication number 20220271147
- Publication date Aug 25, 2022
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride-Based Transistor Device and Method of Fabricating...
- Publication number 20200321447
- Publication date Oct 8, 2020
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20190096779
- Publication date Mar 28, 2019
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Probe Test Card with Integrated Hall Measurement Feat...
- Publication number 20180328981
- Publication date Nov 15, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- G01 - MEASURING TESTING
Information Patent Application
Method of Forming a Vertical Potential Short in a Periphery Region...
- Publication number 20180331175
- Publication date Nov 15, 2018
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Electron-Mobility Transistor Having a Buried Field Plate
- Publication number 20170365702
- Publication date Dec 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having a Test Structure Formed in a Group I...
- Publication number 20170330808
- Publication date Nov 16, 2017
- Infineon Technologies Austria AG
- Franz Heider
- G01 - MEASURING TESTING
Information Patent Application
Vertical Potential Short in the Periphery Region of a III-Nitride S...
- Publication number 20170243936
- Publication date Aug 24, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Carrier Injection Mitigation...
- Publication number 20170200817
- Publication date Jul 13, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer and method
- Publication number 20170186600
- Publication date Jun 29, 2017
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Bidirectional Device
- Publication number 20170125562
- Publication date May 4, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Switch Circuit, Semiconductor Device and Method
- Publication number 20170103978
- Publication date Apr 13, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Semiconductor Device
- Publication number 20170104076
- Publication date Apr 13, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE USING FREE RADICAL STA...
- Publication number 20160260817
- Publication date Sep 8, 2016
- Infineon Technologies Austria AG
- Maria Reiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-...
- Publication number 20160247905
- Publication date Aug 25, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20160240645
- Publication date Aug 18, 2016
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Device Having a Buried Insulating Region
- Publication number 20160155834
- Publication date Jun 2, 2016
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Planar Normally Off Compound Semiconductor Device
- Publication number 20160087089
- Publication date Mar 24, 2016
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Electron-Mobility Transistor Having a Buried Field Plate
- Publication number 20160071967
- Publication date Mar 10, 2016
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a High Breakdown Voltage III-Nitride Device
- Publication number 20150311312
- Publication date Oct 29, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride-Based Enhancement Mode Transistor Having a Hetero...
- Publication number 20150255590
- Publication date Sep 10, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-Nitride-Based Enhancement Mode Transistor
- Publication number 20150249134
- Publication date Sep 3, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT
- Publication number 20150221748
- Publication date Aug 6, 2015
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device
- Publication number 20150115326
- Publication date Apr 30, 2015
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing HEMTs with an Integrated Schottky Diode
- Publication number 20150011058
- Publication date Jan 8, 2015
- Infineon Technologies Austria
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Cascaded Diode with HEMT and Monolithically Integrated...
- Publication number 20140367700
- Publication date Dec 18, 2014
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Breakdown Voltage III-Nitride Device
- Publication number 20140042448
- Publication date Feb 13, 2014
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS

Clemens Ostermaier

Person

Patents Grantslast 30 patents

Group III nitride-based transistor device

Type III-V semiconductor device with improved leakage

Group III nitride-based transistor device and method of fabricating...

High-electron-mobility transistor having a buried field plate

Semiconductor device

Method of forming a vertical potential short in a periphery region...

Semiconductor wafer and method

Semiconductor device

Method of conditioning an etch chamber for contaminant free etching...

Semiconductor probe test card with integrated hall measurement feat...

Non-planar normally off compound semiconductor device

Vertical potential short in the periphery region of a III-nitride s...

High electron mobility transistor with carrier injection mitigation...

Semiconductor structure having a test structure formed in a group I...

Semiconductor device

Group III-nitride-based enhancement mode transistor having a multi-...

III-nitride bidirectional device

Semiconductor structure and methods

High-electron-mobility transistor having a buried field plate

Contact structures for compound semiconductor devices

Group III-nitride-based enhancement mode transistor having a hetero...

Electronic device

Surface treatment of semiconductor substrate using free radical sta...

Method of manufacturing HEMTs with an integrated Schottky diode

Method of manufacturing a multi-channel HEMT

Group III-nitride-based enhancement mode transistor

Method of manufacturing a high breakdown voltage III-nitride device

High-voltage cascaded diode with HEMT and monolithically integrated...

High breakdown voltage III-nitride device

Group III-nitride-based enhancement mode transistor

Patents Applicationslast 30 patents

Multi-Channel High Electron Mobility Transistor with Reduced Input...

GROUP III NITRIDE TRANSISTOR DEVICE

Type III-V Semiconductor Device with Improved Leakage

Group III Nitride-Based Transistor Device

Group III Nitride-Based Transistor Device and Method of Fabricating...

Semiconductor Device

Semiconductor Probe Test Card with Integrated Hall Measurement Feat...

Method of Forming a Vertical Potential Short in a Periphery Region...

High-Electron-Mobility Transistor Having a Buried Field Plate

Semiconductor Structure Having a Test Structure Formed in a Group I...

Vertical Potential Short in the Periphery Region of a III-Nitride S...

High Electron Mobility Transistor with Carrier Injection Mitigation...

Semiconductor wafer and method

III-Nitride Bidirectional Device

Switch Circuit, Semiconductor Device and Method

Semiconductor Device

SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATE USING FREE RADICAL STA...

Group III-Nitride-Based Enhancement Mode Transistor Having a Multi-...

Semiconductor Device

III-Nitride Device Having a Buried Insulating Region

Non-Planar Normally Off Compound Semiconductor Device

High-Electron-Mobility Transistor Having a Buried Field Plate

Method of Manufacturing a High Breakdown Voltage III-Nitride Device

Group III-Nitride-Based Enhancement Mode Transistor Having a Hetero...

Group III-Nitride-Based Enhancement Mode Transistor

METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT

Electronic Device

Method of Manufacturing HEMTs with an Integrated Schottky Diode

High-Voltage Cascaded Diode with HEMT and Monolithically Integrated...

High Breakdown Voltage III-Nitride Device