Clint Montgomery

Person

Coppell, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor formed on a recrystallized polysilicon layer
- Patent number 8,053,296
- Issue date Nov 8, 2011
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for full gate silicidation of metal gate structures
- Patent number 7,863,192
- Issue date Jan 4, 2011
- Texas Instruments Incorporated
- Aaron Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method to facilitate silicidation
- Patent number 7,448,395
- Issue date Nov 11, 2008
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having silicided re...
- Patent number 7,422,968
- Issue date Sep 9, 2008
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a void free via
- Patent number 7,323,409
- Issue date Jan 29, 2008
- Texas Instruments Incorporated
- Alfred J. Griffin, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a fully silicided gate electrode and me...
- Patent number 7,148,143
- Issue date Dec 12, 2006
- Texas Instruments Incorporated
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a void free via
- Patent number 6,977,437
- Issue date Dec 20, 2005
- Texas Instruments Incorporated
- Alfred J. Griffin, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post plasma clean process for a hardmask
- Patent number 6,921,721
- Issue date Jul 26, 2005
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITOR FORMED ON A RECRYSTALLIZED POLYSILICON LAYER
- Publication number 20100159665
- Publication date Jun 24, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FULL GATE SILICIDATION OF METAL GATE STRUCTURES
- Publication number 20090170258
- Publication date Jul 2, 2009
- Aaron Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM CMOS CIRCUITS WITH SUB 50NM STI STRUCTURES USING SEL...
- Publication number 20090096055
- Publication date Apr 16, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Clint L. Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Fully Silicided Gate Electrode and Me...
- Publication number 20070063294
- Publication date Mar 22, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device having silicided re...
- Publication number 20060024882
- Publication date Feb 2, 2006
- Texas Instruments, Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process method to facilitate silicidation
- Publication number 20060014393
- Publication date Jan 19, 2006
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a fully silicided gate electrode and me...
- Publication number 20050215055
- Publication date Sep 29, 2005
- Texas Instruments, Incorporated
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a void free via
- Publication number 20050146035
- Publication date Jul 7, 2005
- Alfred J. Griffin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor formed on a recrystallized polysilicon layer and a method...
- Publication number 20050110114
- Publication date May 26, 2005
- Texas Instruments, Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post plasma clean process for a hardmask
- Publication number 20050090115
- Publication date Apr 28, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a void free via
- Publication number 20040178504
- Publication date Sep 16, 2004
- Alfred J. Griffin
- H01 - BASIC ELECTRIC ELEMENTS

Clint Montgomery

Person

Patents Grantslast 30 patents

Capacitor formed on a recrystallized polysilicon layer

Methods for full gate silicidation of metal gate structures

Process method to facilitate silicidation

Method for manufacturing a semiconductor device having silicided re...

Method for forming a void free via

Semiconductor device having a fully silicided gate electrode and me...

Method for forming a void free via

Post plasma clean process for a hardmask

Patents Applicationslast 30 patents

CAPACITOR FORMED ON A RECRYSTALLIZED POLYSILICON LAYER

METHODS FOR FULL GATE SILICIDATION OF METAL GATE STRUCTURES

METHOD TO FORM CMOS CIRCUITS WITH SUB 50NM STI STRUCTURES USING SEL...

Semiconductor Device Having a Fully Silicided Gate Electrode and Me...

Method for manufacturing a semiconductor device having silicided re...

Process method to facilitate silicidation

Semiconductor device having a fully silicided gate electrode and me...

Method for forming a void free via

Capacitor formed on a recrystallized polysilicon layer and a method...

Post plasma clean process for a hardmask

Method for forming a void free via