Constantin Bulucea

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structures to avoid floating resurf layer in high voltage lateral d...
- Patent number 10,319,809
- Issue date Jun 11, 2019
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating RESURF layer in high voltage lateral d...
- Patent number 9,876,071
- Issue date Jan 23, 2018
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure using empt...
- Patent number 8,735,980
- Issue date May 27, 2014
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of asymmetric field-effect transistor hav...
- Patent number 8,629,027
- Issue date Jan 14, 2014
- Texas Instruments Incorporated
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor architecture having field-effect transistors especial...
- Patent number 8,610,207
- Issue date Dec 17, 2013
- Texas Instruments Incorporated
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride HEMT with multi-layered substrate having a second...
- Patent number 8,513,703
- Issue date Aug 20, 2013
- National Semiconductor Corporation
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride HEMT having a well region formed on the surface o...
- Patent number 8,502,273
- Issue date Aug 6, 2013
- National Semiconductor Corporation
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure having asy...
- Patent number 8,415,752
- Issue date Apr 9, 2013
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of field-effect transistor using empty we...
- Patent number 8,410,549
- Issue date Apr 2, 2013
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor architecture having field-effect transistors especial...
- Patent number 8,395,212
- Issue date Mar 12, 2013
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of like-polarity field-effect transistors...
- Patent number 8,377,768
- Issue date Feb 19, 2013
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor architecture having field-effect trans...
- Patent number 8,309,420
- Issue date Nov 13, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure in which s...
- Patent number 8,304,320
- Issue date Nov 6, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure having bip...
- Patent number 8,304,308
- Issue date Nov 6, 2012
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure using empt...
- Patent number 8,304,835
- Issue date Nov 6, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor architecture having field-effect trans...
- Patent number 8,258,026
- Issue date Sep 4, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor structure having asymmetric field-effe...
- Patent number 8,163,619
- Issue date Apr 24, 2012
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of insulated-gate field-effect transistor...
- Patent number 8,148,777
- Issue date Apr 3, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor with vertical body-material...
- Patent number 8,129,262
- Issue date Mar 6, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of asymmetric field-effect transistors using L-shaped s...
- Patent number 8,101,479
- Issue date Jan 24, 2012
- National Semiconductor Corporation
- D. Courtney Parker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of like-polarity field-effect transistors...
- Patent number 8,084,827
- Issue date Dec 27, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor having hypoabrupt body dopan...
- Patent number 8,034,679
- Issue date Oct 11, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configuration and fabrication of semiconductor structure having bip...
- Patent number 8,030,151
- Issue date Oct 4, 2011
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor architecture having field-effect transistors especial...
- Patent number 8,013,390
- Issue date Sep 6, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure in which source and drain extensions of fie...
- Patent number 7,973,372
- Issue date Jul 5, 2011
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor architecture having field-effect trans...
- Patent number 7,972,918
- Issue date Jul 5, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric field-effect transistor having asymmetric channel zone a...
- Patent number 7,968,921
- Issue date Jun 28, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistor with reduced junction capaci...
- Patent number 7,879,669
- Issue date Feb 1, 2011
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure utilizing empty and filled wells
- Patent number 7,863,681
- Issue date Jan 4, 2011
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor architecture having field-effect trans...
- Patent number 7,838,369
- Issue date Nov 23, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20180108729
- Publication date Apr 19, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20160254346
- Publication date Sep 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectrically Terminated Superjunction FET
- Publication number 20140097491
- Publication date Apr 10, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPT...
- Publication number 20130126970
- Publication date May 23, 2013
- NATIONAL SEMICONDUCTOR CORPORATION
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Architecture Having Field-effect Transistors Especial...
- Publication number 20130126983
- Publication date May 23, 2013
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure Having Asy...
- Publication number 20130015535
- Publication date Jan 17, 2013
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Architecture Having Field-effect Transistors Especial...
- Publication number 20120299097
- Publication date Nov 29, 2012
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120273880
- Publication date Nov 1, 2012
- National Semiconductor Corporation
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Like-polarity Field-effect Transistors...
- Publication number 20120264263
- Publication date Oct 18, 2012
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120181614
- Publication date Jul 19, 2012
- Chih Sieh Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure Having Bip...
- Publication number 20120181619
- Publication date Jul 19, 2012
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Fabrication of Field-effect Transistor for Alleviatin...
- Publication number 20120181620
- Publication date Jul 19, 2012
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Semiconductor Architecture Having Field-effect Trans...
- Publication number 20120181626
- Publication date Jul 19, 2012
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and Fabrication of Semiconductor Structure in Which S...
- Publication number 20120184077
- Publication date Jul 19, 2012
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER
- Publication number 20120139013
- Publication date Jun 7, 2012
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-N HEMT with an Increased Buffer Breakdown Voltage
- Publication number 20120098035
- Publication date Apr 26, 2012
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-N HEMT with a Floating Substrate Region and a Grounded Su...
- Publication number 20120098036
- Publication date Apr 26, 2012
- Sandeep Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure using empt...
- Publication number 20100244128
- Publication date Sep 30, 2010
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of field-effect transistor using empty we...
- Publication number 20100244130
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of asymmetric field-effect transistor hav...
- Publication number 20100244131
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure having bip...
- Publication number 20100244143
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of like-polarity field-effect transistors...
- Publication number 20100244149
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure having ext...
- Publication number 20100244152
- Publication date Sep 30, 2010
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication and structure of asymmetric field-effect transistors us...
- Publication number 20100244106
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- D. Courtney Parker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure having asy...
- Publication number 20100244147
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Jeng-Jiun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Configuration and fabrication of semiconductor structure in which s...
- Publication number 20100244150
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and fabrication of field-effect transistor having source/...
- Publication number 20100244151
- Publication date Sep 30, 2010
- National Semiconductor Corporation
- William D. French
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of semiconductor architecture having field-effect trans...
- Publication number 20080311717
- Publication date Dec 18, 2008
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor architecture having field-effect transistors especial...
- Publication number 20080308878
- Publication date Dec 18, 2008
- National Semiconductor Corporation
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate-enhanced junction varactor with gradual capacitance variation
- Publication number 20030137796
- Publication date Jul 24, 2003
- Constantin Bulucea
- H03 - BASIC ELECTRONIC CIRCUITRY

Constantin Bulucea

Person

Patents Grantslast 30 patents

Structures to avoid floating resurf layer in high voltage lateral d...

Structures to avoid floating RESURF layer in high voltage lateral d...

Configuration and fabrication of semiconductor structure using empt...

Structure and fabrication of asymmetric field-effect transistor hav...

Semiconductor architecture having field-effect transistors especial...

Group III-nitride HEMT with multi-layered substrate having a second...

Group III-nitride HEMT having a well region formed on the surface o...

Configuration and fabrication of semiconductor structure having asy...

Structure and fabrication of field-effect transistor using empty we...

Semiconductor architecture having field-effect transistors especial...

Structure and fabrication of like-polarity field-effect transistors...

Fabrication of semiconductor architecture having field-effect trans...

Configuration and fabrication of semiconductor structure in which s...

Configuration and fabrication of semiconductor structure having bip...

Configuration and fabrication of semiconductor structure using empt...

Fabrication of semiconductor architecture having field-effect trans...

Fabrication of semiconductor structure having asymmetric field-effe...

Structure and fabrication of insulated-gate field-effect transistor...

Fabrication of field-effect transistor with vertical body-material...

Fabrication of asymmetric field-effect transistors using L-shaped s...

Structure and fabrication of like-polarity field-effect transistors...

Fabrication of field-effect transistor having hypoabrupt body dopan...

Configuration and fabrication of semiconductor structure having bip...

Semiconductor architecture having field-effect transistors especial...

Semiconductor structure in which source and drain extensions of fie...

Fabrication of semiconductor architecture having field-effect trans...

Asymmetric field-effect transistor having asymmetric channel zone a...

Fabrication of field-effect transistor with reduced junction capaci...

Semiconductor structure utilizing empty and filled wells

Fabrication of semiconductor architecture having field-effect trans...

Patents Applicationslast 30 patents

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

Dielectrically Terminated Superjunction FET

CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPT...

Semiconductor Architecture Having Field-effect Transistors Especial...

Configuration and Fabrication of Semiconductor Structure Having Asy...

Semiconductor Architecture Having Field-effect Transistors Especial...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Structure and Fabrication of Like-polarity Field-effect Transistors...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Configuration and Fabrication of Semiconductor Structure Having Bip...

Structure and Fabrication of Field-effect Transistor for Alleviatin...

Fabrication of Semiconductor Architecture Having Field-effect Trans...

Configuration and Fabrication of Semiconductor Structure in Which S...

STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER

Group III-N HEMT with an Increased Buffer Breakdown Voltage

Group III-N HEMT with a Floating Substrate Region and a Grounded Su...

Configuration and fabrication of semiconductor structure using empt...

Structure and fabrication of field-effect transistor using empty we...

Structure and fabrication of asymmetric field-effect transistor hav...

Configuration and fabrication of semiconductor structure having bip...

Structure and fabrication of like-polarity field-effect transistors...

Configuration and fabrication of semiconductor structure having ext...

Fabrication and structure of asymmetric field-effect transistors us...

Configuration and fabrication of semiconductor structure having asy...

Configuration and fabrication of semiconductor structure in which s...

Structure and fabrication of field-effect transistor having source/...

Fabrication of semiconductor architecture having field-effect trans...

Semiconductor architecture having field-effect transistors especial...

Gate-enhanced junction varactor with gradual capacitance variation