Cory C. Bomberger

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 12,272,727
- Issue date Apr 8, 2025
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin smoothing and integrated circuit structures resulting therefrom
- Patent number 12,237,420
- Issue date Feb 25, 2025
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having source or drai...
- Patent number 12,159,901
- Issue date Dec 3, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with low resistivity
- Patent number 12,027,585
- Issue date Jul 2, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with high germanium concentration cappin...
- Patent number 12,027,417
- Issue date Jul 2, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin smoothing and integrated circuit structures resulting therefrom
- Patent number 12,021,149
- Issue date Jun 25, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional integrated circuits (3DICs) including bottom gate...
- Patent number 11,996,404
- Issue date May 28, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,990,513
- Issue date May 21, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures with sub-fin dopant diffusion blocking layers
- Patent number 11,984,449
- Issue date May 14, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,978,784
- Issue date May 7, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top gate recessed channel CMOS thin film transistor in the back end...
- Patent number 11,929,320
- Issue date Mar 12, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor structures with regrown source and drain
- Patent number 11,887,988
- Issue date Jan 30, 2024
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,735,670
- Issue date Aug 22, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures with source or drain dopant diffusion...
- Patent number 11,735,630
- Issue date Aug 22, 2023
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium nMOS transistors
- Patent number 11,699,756
- Issue date Jul 11, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin smoothing and integrated circuit structures resulting therefrom
- Patent number 11,682,731
- Issue date Jun 20, 2023
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with low resistivity
- Patent number 11,621,325
- Issue date Apr 4, 2023
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical semiconductor nanowire field-effect transistor
- Patent number 11,575,005
- Issue date Feb 7, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,532,706
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,532,734
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having source or drai...
- Patent number 11,522,048
- Issue date Dec 6, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures with sub-fin dopant diffusion blocking layers
- Patent number 11,521,968
- Issue date Dec 6, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate defect blocking layers for strained channel semiconductor...
- Patent number 11,482,457
- Issue date Oct 25, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-rich nanowire transistor with relaxed buffer layer
- Patent number 11,450,739
- Issue date Sep 20, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming crystalline source/drain contacts on semiconductor devices
- Patent number 11,430,787
- Issue date Aug 30, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diverse transistor channel materials enabled by thin, inverse-grade...
- Patent number 11,404,575
- Issue date Aug 2, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with contact etch stop layer
- Patent number 11,374,100
- Issue date Jun 28, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top gate recessed channel CMOS thin film transistor in the back end...
- Patent number 11,328,988
- Issue date May 10, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device, method and system for promoting channel stress in a NMOS tr...
- Patent number 11,264,501
- Issue date Mar 1, 2022
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional integrated circuits (3DICs) including bottom gate...
- Patent number 11,244,943
- Issue date Feb 8, 2022
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20250142870
- Publication date May 1, 2025
- Intel Corporation
- Cory BOMBERGER
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20240274718
- Publication date Aug 15, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20240186378
- Publication date Jun 6, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF...
- Publication number 20240136277
- Publication date Apr 25, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION...
- Publication number 20230343826
- Publication date Oct 26, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON
- Publication number 20230317789
- Publication date Oct 5, 2023
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20230275157
- Publication date Aug 31, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF METAL CONTACTS TO SILICON GERMANIUM LAYERS WITH ETCH R...
- Publication number 20230207655
- Publication date Jun 29, 2023
- Intel Corporation
- Rushabh D. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20230207651
- Publication date Jun 29, 2023
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATION VIA ION IMPLANTATION IN RELAXED BUFFER LAYER TO...
- Publication number 20230207317
- Publication date Jun 29, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DOPED INTRINSIC GERMANIUM CAPS ON SOURCE DRAIN REG...
- Publication number 20230207560
- Publication date Jun 29, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH TITANI...
- Publication number 20230197817
- Publication date Jun 22, 2023
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURE WITH BACKSIDE EPITAXIAL GROWTH
- Publication number 20230197862
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY
- Publication number 20230197785
- Publication date Jun 22, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN LINER FOR IMPROVED CONTACT...
- Publication number 20230197716
- Publication date Jun 22, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR DEVICE WITH COMPRESSIVELY STRAINED CHANN...
- Publication number 20230163212
- Publication date May 25, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON RICH CAPPING LAYER PRE-AMORPHIZED WITH GERMANIUM AND BORON...
- Publication number 20230101725
- Publication date Mar 30, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH A SILI...
- Publication number 20230087399
- Publication date Mar 23, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20230082276
- Publication date Mar 16, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...
- Publication number 20230071989
- Publication date Mar 9, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20230058558
- Publication date Feb 23, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES WITH SUB-FIN DOPANT DIFFUSION BLOCKING LAYERS
- Publication number 20230043665
- Publication date Feb 9, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...
- Publication number 20220416050
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CONTACT RESISTIVITY WITH PMOS GERMANIUM AND SILICON DOPED W...
- Publication number 20220416043
- Publication date Dec 29, 2022
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR IN THE BACK END...
- Publication number 20220223519
- Publication date Jul 14, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20220093797
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL INTEGRATED CIRCUITS (3DICS) INCLUDING BOTTOM GATE...
- Publication number 20220093586
- Publication date Mar 24, 2022
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...
- Publication number 20220037530
- Publication date Feb 3, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...
- Publication number 20210408283
- Publication date Dec 30, 2021
- Intel Corporation
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS

Cory C. Bomberger

Person

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having embedded GeSnB...

Fin smoothing and integrated circuit structures resulting therefrom

Gate-all-around integrated circuit structures having source or drai...

Source or drain structures with low resistivity

Source or drain structures with high germanium concentration cappin...

Fin smoothing and integrated circuit structures resulting therefrom

Three-dimensional integrated circuits (3DICs) including bottom gate...

Gate-all-around integrated circuit structures having embedded GeSnB...

Channel structures with sub-fin dopant diffusion blocking layers

Gate-all-around integrated circuit structures having germanium nano...

Top gate recessed channel CMOS thin film transistor in the back end...

Thin film transistor structures with regrown source and drain

Non-selective epitaxial source/drain deposition to reduce dopant di...

Integrated circuit structures with source or drain dopant diffusion...

Source/drain diffusion barrier for germanium nMOS transistors

Fin smoothing and integrated circuit structures resulting therefrom

Source or drain structures with low resistivity

Asymmetrical semiconductor nanowire field-effect transistor

Gate-all-around integrated circuit structures having embedded GeSnB...

Gate-all-around integrated circuit structures having germanium nano...

Gate-all-around integrated circuit structures having source or drai...

Channel structures with sub-fin dopant diffusion blocking layers

Substrate defect blocking layers for strained channel semiconductor...

Germanium-rich nanowire transistor with relaxed buffer layer

Forming crystalline source/drain contacts on semiconductor devices

Diverse transistor channel materials enabled by thin, inverse-grade...

Source or drain structures with contact etch stop layer

Top gate recessed channel CMOS thin film transistor in the back end...

Device, method and system for promoting channel stress in a NMOS tr...

Three-dimensional integrated circuits (3DICs) including bottom gate...

Patents Applicationslast 30 patents

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF...

INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION...

SOURCE OR DRAIN STRUCTURES WITH SELECTIVE SILICIDE CONTACTS THEREON

FIN SMOOTHING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

FORMATION OF METAL CONTACTS TO SILICON GERMANIUM LAYERS WITH ETCH R...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

STRAIN COMPENSATION VIA ION IMPLANTATION IN RELAXED BUFFER LAYER TO...

TRANSISTORS WITH DOPED INTRINSIC GERMANIUM CAPS ON SOURCE DRAIN REG...

LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH TITANI...

DIODE STRUCTURE WITH BACKSIDE EPITAXIAL GROWTH

SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN LINER FOR IMPROVED CONTACT...

GATE-ALL-AROUND TRANSISTOR DEVICE WITH COMPRESSIVELY STRAINED CHANN...

SILICON RICH CAPPING LAYER PRE-AMORPHIZED WITH GERMANIUM AND BORON...

LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH A SILI...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

CHANNEL STRUCTURES WITH SUB-FIN DOPANT DIFFUSION BLOCKING LAYERS

LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...

REDUCED CONTACT RESISTIVITY WITH PMOS GERMANIUM AND SILICON DOPED W...

TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR IN THE BACK END...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

THREE-DIMENSIONAL INTEGRATED CIRCUITS (3DICS) INCLUDING BOTTOM GATE...

NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...