Cory E. Weber

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 12,243,875
- Issue date Mar 4, 2025
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin doping and integrated circuit structures resulting therefrom
- Patent number 12,199,098
- Issue date Jan 14, 2025
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extension of nanocomb transistor arrangements to implement gate all...
- Patent number 12,068,206
- Issue date Aug 20, 2024
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanowire device having (111)-plane channel sidewalls
- Patent number 11,990,476
- Issue date May 21, 2024
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 11,923,370
- Issue date Mar 5, 2024
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures for thin-film transistors
- Patent number 11,881,517
- Issue date Jan 23, 2024
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator FIN...
- Patent number 11,862,702
- Issue date Jan 2, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having wrap-around contacts
- Patent number 11,757,026
- Issue date Sep 12, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical integration scheme and circuit elements architecture for a...
- Patent number 11,522,072
- Issue date Dec 6, 2022
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to n-type transistors with X-valley layer over L-valley ch...
- Patent number 11,515,420
- Issue date Nov 29, 2022
- Intel Corporation
- Dax M. Crum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanowire device having (111)-plane channel sidewalls
- Patent number 11,398,478
- Issue date Jul 26, 2022
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator fin...
- Patent number 11,342,432
- Issue date May 24, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures for thin-film transistors
- Patent number 11,335,789
- Issue date May 17, 2022
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping fin structures of non-planar transistor devices
- Patent number 11,264,453
- Issue date Mar 1, 2022
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping fin structures of non-planar transistor devices
- Patent number 11,222,947
- Issue date Jan 11, 2022
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for increasing channel region tensile strain in n-MOS de...
- Patent number 11,011,620
- Issue date May 18, 2021
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked devices with self-aligned regions formed by dire...
- Patent number 10,991,696
- Issue date Apr 27, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside fin recess control with multi-HSI option
- Patent number 10,910,405
- Issue date Feb 2, 2021
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical integration scheme and circuit elements architecture for a...
- Patent number 10,847,635
- Issue date Nov 24, 2020
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having wrap-around contacts
- Patent number 10,840,366
- Issue date Nov 17, 2020
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Backside fin recess control with multi-hsi option
- Patent number 10,600,810
- Issue date Mar 24, 2020
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for doping a sub-fin region of a semiconductor structure by...
- Patent number 10,497,781
- Issue date Dec 3, 2019
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having wrap-around contacts
- Patent number 10,483,385
- Issue date Nov 19, 2019
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Hybrid trigate and nanowire CMOS device architecture
- Patent number 10,411,090
- Issue date Sep 10, 2019
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical integration scheme and circuit elements architecture for a...
- Patent number 10,304,946
- Issue date May 28, 2019
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 10,084,087
- Issue date Sep 25, 2018
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 9,660,078
- Issue date May 23, 2017
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 9,583,487
- Issue date Feb 28, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...
- Publication number 20240355682
- Publication date Oct 24, 2024
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20240153956
- Publication date May 9, 2024
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...
- Publication number 20240088254
- Publication date Mar 14, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING ULTRA-HIGH CONDUCTIVITY GLOBAL...
- Publication number 20240006416
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY ACCESS TRANSISTOR WITH...
- Publication number 20240008253
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAYS WITH BACKSIDE COMPONENTS AND ANGLED TRANSISTORS
- Publication number 20240008255
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek A. Sharma
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL KEEPER OR POWER GATE...
- Publication number 20240006317
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL TRANSISTOR
- Publication number 20240006531
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING RECESSED CHANNEL TRANSISTOR
- Publication number 20240006412
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING RAISED EPITAXY ON CHANNEL TRAN...
- Publication number 20240006483
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING AIRGAPS FOR BACKSIDE SIGNAL RO...
- Publication number 20240006305
- Publication date Jan 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND...
- Publication number 20230422485
- Publication date Dec 28, 2023
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED CHANNEL SIZING
- Publication number 20230317808
- Publication date Oct 5, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NECKED FEATURE
- Publication number 20230317786
- Publication date Oct 5, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING METAL-CONTAINING SOURCE OR DRA...
- Publication number 20230095007
- Publication date Mar 30, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH REDUCED SOURCE/DRAIN LEAKAGE THROUGH BAC...
- Publication number 20230097948
- Publication date Mar 30, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DOPED SUBFIN
- Publication number 20230088753
- Publication date Mar 23, 2023
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INTEGRATION SCHEME AND CIRCUIT ELEMENTS ARCHITECTURE FOR A...
- Publication number 20230046755
- Publication date Feb 16, 2023
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE & DRAIN ETCH STOP
- Publication number 20220415708
- Publication date Dec 29, 2022
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS
- Publication number 20220310600
- Publication date Sep 29, 2022
- Intel Corporation
- Cory E. WEBER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DOPING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM
- Publication number 20220310601
- Publication date Sep 29, 2022
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...
- Publication number 20220246743
- Publication date Aug 4, 2022
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES FOR THIN-FILM TRANSISTORS
- Publication number 20220238685
- Publication date Jul 28, 2022
- Intel Corporation
- Abhishek SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20220093647
- Publication date Mar 24, 2022
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...
- Publication number 20220093474
- Publication date Mar 24, 2022
- Intel Corporation
- Varun Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES
- Publication number 20210384307
- Publication date Dec 9, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...
- Publication number 20210305388
- Publication date Sep 30, 2021
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS
- Publication number 20210074703
- Publication date Mar 11, 2021
- Intel Corporation
- Cory E. WEBER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INTEGRATION SCHEME AND CIRCUIT ELEMENTS ARCHITECTURE FOR A...
- Publication number 20210043755
- Publication date Feb 11, 2021
- Intel Corporation
- Rishabh MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS
- Publication number 20210036137
- Publication date Feb 4, 2021
- Intel Corporation
- Stephen M. CEA
- B82 - NANO-TECHNOLOGY

Cory E. Weber

Person

Patents Grantslast 30 patents

Forksheet transistors with dielectric or conductive spine

Fin doping and integrated circuit structures resulting therefrom

Reducing off-state leakage in semiconductor devices

Extension of nanocomb transistor arrangements to implement gate all...

Semiconductor nanowire device having (111)-plane channel sidewalls

Forksheet transistors with dielectric or conductive spine

Channel structures for thin-film transistors

Gate-all-around integrated circuit structures having insulator FIN...

Nanowire structures having wrap-around contacts

Vertical integration scheme and circuit elements architecture for a...

Contacts to n-type transistors with X-valley layer over L-valley ch...

Semiconductor nanowire device having (111)-plane channel sidewalls

Gate-all-around integrated circuit structures having insulator fin...

Channel structures for thin-film transistors

Methods of doping fin structures of non-planar transistor devices

Methods of doping fin structures of non-planar transistor devices

Techniques for increasing channel region tensile strain in n-MOS de...

Vertically stacked devices with self-aligned regions formed by dire...

Backside fin recess control with multi-HSI option

Vertical integration scheme and circuit elements architecture for a...

Semiconductor device having metallic source and drain regions

Nanowire structures having wrap-around contacts

Backside fin recess control with multi-hsi option

Methods for doping a sub-fin region of a semiconductor structure by...

Nanowire structures having wrap-around contacts

Hybrid trigate and nanowire CMOS device architecture

Vertical integration scheme and circuit elements architecture for a...

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Semiconductor device having metallic source and drain regions

Patents Applicationslast 30 patents

EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...

INTEGRATED CIRCUIT STRUCTURES HAVING ULTRA-HIGH CONDUCTIVITY GLOBAL...

INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY ACCESS TRANSISTOR WITH...

MEMORY ARRAYS WITH BACKSIDE COMPONENTS AND ANGLED TRANSISTORS

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL KEEPER OR POWER GATE...

INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL TRANSISTOR

INTEGRATED CIRCUIT STRUCTURES HAVING RECESSED CHANNEL TRANSISTOR

INTEGRATED CIRCUIT STRUCTURES HAVING RAISED EPITAXY ON CHANNEL TRAN...

INTEGRATED CIRCUIT STRUCTURES HAVING AIRGAPS FOR BACKSIDE SIGNAL RO...

INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND...

INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIATED CHANNEL SIZING

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NECKED FEATURE

INTEGRATED CIRCUIT STRUCTURES HAVING METAL-CONTAINING SOURCE OR DRA...

TRANSISTOR STRUCTURES WITH REDUCED SOURCE/DRAIN LEAKAGE THROUGH BAC...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DOPED SUBFIN

VERTICAL INTEGRATION SCHEME AND CIRCUIT ELEMENTS ARCHITECTURE FOR A...

TRANSISTORS WITH SOURCE & DRAIN ETCH STOP

SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS

FIN DOPING AND INTEGRATED CIRCUIT STRUCTURES RESULTING THEREFROM

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...

CHANNEL STRUCTURES FOR THIN-FILM TRANSISTORS

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL...

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...

SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS

VERTICAL INTEGRATION SCHEME AND CIRCUIT ELEMENTS ARCHITECTURE FOR A...

NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS