Craig Andyke

Follow

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming strained source drain junction field effect transistors
- Patent number 6,911,706
- Issue date Jun 28, 2005
- Intel Corporation
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming strained source drain junction field effect transistors
- Patent number 6,638,802
- Issue date Oct 28, 2003
- Intel Corporation
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Codoping of source drains using carbon or fluorine ion implants to...
- Publication number 20040102013
- Publication date May 27, 2004
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming strained source drain junction field effect transistors
- Publication number 20040038468
- Publication date Feb 26, 2004
- Jack Hwang
- H01 - BASIC ELECTRIC ELEMENTS