Craig Huffman

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming fully silicided NMOS and PMOS semiconductor devic...
- Patent number 8,574,980
- Issue date Nov 5, 2013
- Texas Instruments Incorporated
- Freidoon Mehrad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gates using one metal to alter work function of another...
- Patent number 8,236,686
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigation of gate to contact capacitance in CMOS flow
- Patent number 8,119,470
- Issue date Feb 21, 2012
- Texas Instruments Incorporated
- Shashank Sureshchandra Ekbote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-gate MOSFET device and associated manufacturing methods
- Patent number 7,960,234
- Issue date Jun 14, 2011
- Texas Instruments Incorporated
- Craig Henry Huffman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided gate with oxide barrier on the source/...
- Patent number 7,737,015
- Issue date Jun 15, 2010
- Texas Instruments Incorporated
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode for FinFET device
- Patent number 7,094,650
- Issue date Aug 22, 2006
- Infineon Technologies AG
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch back of interconnect dielectrics
- Patent number 6,780,756
- Issue date Aug 24, 2004
- Texas Instruments Incorporated
- David G. Farber
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...
- Publication number 20120256270
- Publication date Oct 11, 2012
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devic...
- Publication number 20090321846
- Publication date Dec 31, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Freidoon Mehrad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...
- Publication number 20090294867
- Publication date Dec 3, 2009
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FULLY SILICIDED NMOS AND PMOS SEMICONDUCTOR DEVIC...
- Publication number 20090057776
- Publication date Mar 5, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Freidoon Mehrad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH DIVOT CONTROL POST
- Publication number 20080268589
- Publication date Oct 30, 2008
- TEXAS INSTRUMENTS INCORPORATED
- David Gerald Farber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-gate MOSFET device and associated manufacturing methods
- Publication number 20080233697
- Publication date Sep 25, 2008
- Texas Instruments Inc.
- Craig Henry Huffman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mitigation of gate to contact capacitance in CMOS flow
- Publication number 20080230815
- Publication date Sep 25, 2008
- Texas Instruments Inc.
- Shashank Sureshchandra Ekbote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of fully silicided gate with oxide barrier on the source/...
- Publication number 20080206988
- Publication date Aug 28, 2008
- Texas Instruments Inc.
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE FOR FINFET DEVICE
- Publication number 20060160312
- Publication date Jul 20, 2006
- Nirmal Chaudhary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch back of interconnect dielectrics
- Publication number 20040169279
- Publication date Sep 2, 2004
- David G. Farber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH BACK OF INTERCONNECT DIELECTRICS
- Publication number 20040169280
- Publication date Sep 2, 2004
- David G. Farber
- H01 - BASIC ELECTRIC ELEMENTS

Craig Huffman

Person

Patents Grantslast 30 patents

Method of forming fully silicided NMOS and PMOS semiconductor devic...

Dual metal gates using one metal to alter work function of another...

Mitigation of gate to contact capacitance in CMOS flow

Multiple-gate MOSFET device and associated manufacturing methods

Formation of fully silicided gate with oxide barrier on the source/...

Gate electrode for FinFET device

Etch back of interconnect dielectrics

Patents Applicationslast 30 patents

DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...

Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devic...

DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...

METHOD OF FORMING FULLY SILICIDED NMOS AND PMOS SEMICONDUCTOR DEVIC...

SHALLOW TRENCH DIVOT CONTROL POST

Multiple-gate MOSFET device and associated manufacturing methods

Mitigation of gate to contact capacitance in CMOS flow

Formation of fully silicided gate with oxide barrier on the source/...

GATE ELECTRODE FOR FINFET DEVICE

Etch back of interconnect dielectrics

ETCH BACK OF INTERCONNECT DIELECTRICS