Craig Printy

Person

Buxton, ME, US

People

Patents Grantslast 30 patents

Information Patent Grant
High performance SiGe:C HBT with phosphorous atomic layer doping
- Patent number 8,115,196
- Issue date Feb 14, 2012
- National Semiconductor Corporation
- Janial Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for controlling an etch process for a single crys...
- Patent number 8,007,675
- Issue date Aug 30, 2011
- National Semiconductor Corporation
- Andre P. Labonte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance SiGe:C HBT with phosphorous atomic layer doping
- Patent number 7,892,915
- Issue date Feb 22, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having localized insulated block in bulk subst...
- Patent number 7,829,429
- Issue date Nov 9, 2010
- National Semiconductor Corporation
- Craig Printy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a single deposition emitter/base in...
- Patent number 7,781,295
- Issue date Aug 24, 2010
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for measuring germanium concentration for manufac...
- Patent number 7,508,531
- Issue date Mar 24, 2009
- National Semiconductor Corporation
- Craig Printy
- G01 - MEASURING TESTING
Information Patent Grant
High performance SiGe HBT with arsenic atomic layer doping
- Patent number 7,485,538
- Issue date Feb 3, 2009
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for measuring germanium concentration for manufac...
- Patent number 7,319,530
- Issue date Jan 15, 2008
- National Semiconductor Corporation
- Craig Printy
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
HIGH PERFORMANCE SiGe:C HBT WITH PHOSPHOROUS ATOMIC LAYER DOPING
- Publication number 20110180848
- Publication date Jul 28, 2011
- National Semiconductor Corporation
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOCALIZED INSULATED BLOCK IN BULK SUBST...
- Publication number 20110042778
- Publication date Feb 24, 2011
- National Semiconductor Corporation
- Craig Printy
- H01 - BASIC ELECTRIC ELEMENTS

Craig Printy

Person

Patents Grantslast 30 patents

High performance SiGe:C HBT with phosphorous atomic layer doping

System and method for controlling an etch process for a single crys...

High performance SiGe:C HBT with phosphorous atomic layer doping

Semiconductor device having localized insulated block in bulk subst...

System and method for providing a single deposition emitter/base in...

System and method for measuring germanium concentration for manufac...

High performance SiGe HBT with arsenic atomic layer doping

System and method for measuring germanium concentration for manufac...

Patents Applicationslast 30 patents

HIGH PERFORMANCE SiGe:C HBT WITH PHOSPHOROUS ATOMIC LAYER DOPING

SEMICONDUCTOR DEVICE HAVING LOCALIZED INSULATED BLOCK IN BULK SUBST...