Cristiano Calligaro

Person

Torre D'Isola, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Radioisotope power source embedded in electronic devices
- Patent number 10,083,771
- Issue date Sep 25, 2018
- Tower Semiconductor LTD
- Yakov Roizin
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Semiconductor field-effect transistor, memory cell and memory device
- Patent number 9,287,284
- Issue date Mar 15, 2016
- Micron Technology, Inc.
- Paolo Rolandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor field-effect transistor, memory cell and memory device
- Patent number 8,759,915
- Issue date Jun 24, 2014
- Micron Technology, Inc.
- Paolo Rolandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method for reading a memory cell that can store multipl...
- Patent number RE38166
- Issue date Jul 1, 2003
- STMicroelectronics, SRL
- Cristiano Calligaro
- 365 - Static information storage and retrieval
Information Patent Grant
Method and circuit for generating a gate voltage in non-volatile me...
- Patent number 6,016,271
- Issue date Jan 18, 2000
- STMicroeletronics S.R.L.
- Paolo Rolandi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel non-volatile memory devices
- Patent number 5,999,445
- Issue date Dec 7, 1999
- SGS Thomson Microelectronics S.r.l.
- Paolo Rolandi
- G11 - INFORMATION STORAGE
Information Patent Grant
Clock circuit for reading a multilevel non volatile memory cells de...
- Patent number 5,986,921
- Issue date Nov 16, 1999
- SGS-Thomson Microelectronics S.r.L.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading circuit for semiconductor memory cells
- Patent number 5,973,966
- Issue date Oct 26, 1999
- SGS-Thomson Microelectronics, S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading circuit for semiconductor memory cells
- Patent number 5,883,837
- Issue date Mar 16, 1999
- SGS-Thomson Microelectronics, S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading circuit for multilevel non volatile memory cell devices
- Patent number 5,838,612
- Issue date Nov 17, 1998
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage step-up circuit with output voltage regulation
- Patent number 5,777,460
- Issue date Jul 7, 1998
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G05 - CONTROLLING REGULATING
Information Patent Grant
Page-mode memory device with multiple-level memory cells
- Patent number 5,757,719
- Issue date May 26, 1998
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Parallel-dichotomic serial sensing method for sensing multiple-leve...
- Patent number 5,729,490
- Issue date Mar 17, 1998
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading circuit for memory cells
- Patent number 5,710,739
- Issue date Jan 20, 1998
- SGS-Thomson Microelectronics, S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Serial dichotomic method for sensing multiple-level non-volatile me...
- Patent number 5,701,265
- Issue date Dec 23, 1997
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading circuit for memory cell devices having a low supply voltage
- Patent number 5,694,363
- Issue date Dec 2, 1997
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method for reading a memory cell that can store multipl...
- Patent number 5,673,221
- Issue date Sep 30, 1997
- SGS Thomson Microelectronics S.r.l.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage generator circuit providing potentials of opposite polarity
- Patent number 5,546,044
- Issue date Aug 13, 1996
- SGS-Thomson Microelectronics S.R.L.
- Cristiano Calligaro
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RADIOISOTOPE POWER SOURCE EMBEDDED IN ELECTRONIC DEVICES
- Publication number 20160379729
- Publication date Dec 29, 2016
- Tower Semiconductor Ltd.
- Yakov Roizin
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Field-Effect Transistor, Memory Cell and Memory Device
- Publication number 20140302649
- Publication date Oct 9, 2014
- Paolo Rolandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MEMORY CELL AND MEMORY DEVICE
- Publication number 20100213529
- Publication date Aug 26, 2010
- Paolo Rolandi
- H01 - BASIC ELECTRIC ELEMENTS

Cristiano Calligaro

Person

Patents Grantslast 30 patents

Radioisotope power source embedded in electronic devices

Semiconductor field-effect transistor, memory cell and memory device

Semiconductor field-effect transistor, memory cell and memory device

Circuit and method for reading a memory cell that can store multipl...

Method and circuit for generating a gate voltage in non-volatile me...

Multilevel non-volatile memory devices

Clock circuit for reading a multilevel non volatile memory cells de...

Reading circuit for semiconductor memory cells

Reading circuit for semiconductor memory cells

Reading circuit for multilevel non volatile memory cell devices

Voltage step-up circuit with output voltage regulation

Page-mode memory device with multiple-level memory cells

Parallel-dichotomic serial sensing method for sensing multiple-leve...

Reading circuit for memory cells

Serial dichotomic method for sensing multiple-level non-volatile me...

Reading circuit for memory cell devices having a low supply voltage

Circuit and method for reading a memory cell that can store multipl...

Voltage generator circuit providing potentials of opposite polarity

Patents Applicationslast 30 patents

RADIOISOTOPE POWER SOURCE EMBEDDED IN ELECTRONIC DEVICES

Semiconductor Field-Effect Transistor, Memory Cell and Memory Device

SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MEMORY CELL AND MEMORY DEVICE