Cyril Cabral, JR.

Person

Mahopac, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and structure of forming silicide and diffusion barrier laye...
- Patent number 8,293,643
- Issue date Oct 23, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Formation of alpha particle shields in chip packaging
- Patent number 8,247,271
- Issue date Aug 21, 2012
- International Business Machines Corporation
- Paul Stephen Andry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dosimeter powered by passive RF absorption
- Patent number 8,212,218
- Issue date Jul 3, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- G01 - MEASURING TESTING
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 8,193,051
- Issue date Jun 5, 2012
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Particle emission analysis for semiconductor fabrication steps
- Patent number 8,158,449
- Issue date Apr 17, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- G01 - MEASURING TESTING
Information Patent Grant
Self-aligned metal to form contacts to Ge containing substrates and...
- Patent number 8,154,130
- Issue date Apr 10, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alpha particle blocking wire structure and method fabricating same
- Patent number 8,129,267
- Issue date Mar 6, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of silicide formation temperature on SiGe containing subs...
- Patent number 8,125,082
- Issue date Feb 28, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process for forming a self-aligned silicide contact
- Patent number 8,101,518
- Issue date Jan 24, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact metallurgy structure
- Patent number 8,089,157
- Issue date Jan 3, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 8,039,331
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microstructure modification in copper interconnect structure
- Patent number 8,008,199
- Issue date Aug 30, 2011
- International Business Machines Corporation
- Brett C. Baker-O'Neal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition metallic contacts, gates and diffusion barr...
- Patent number 7,998,842
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,928,514
- Issue date Apr 19, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack engineering by electrochemical processing utilizing thro...
- Patent number 7,868,410
- Issue date Jan 11, 2011
- International Business Machines Corporation
- Philippe M. Vereecken
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
High temperature processing compatible metal gate electrode for pFE...
- Patent number 7,863,083
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electrodeposited contacts
- Patent number 7,851,357
- Issue date Dec 14, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microstructure modification in copper interconnect structure
- Patent number 7,843,063
- Issue date Nov 30, 2010
- International Business Machines Corporation
- Brett C. Baker-O'Neal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Changing an electrical resistance of a resistor
- Patent number 7,804,391
- Issue date Sep 28, 2010
- International Business Machines Corporation
- Arne W. Ballantine
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,785,999
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for reduction of soft error rates in integrated circuits
- Patent number 7,781,871
- Issue date Aug 24, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS integration scheme employing a silicide electrode and a silici...
- Patent number 7,749,847
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide interconnect structure
- Patent number 7,749,898
- Issue date Jul 6, 2010
- GLOBALFOUNDRIES Inc.
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,745,278
- Issue date Jun 29, 2010
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal to form contacts to Ge containing substrates and...
- Patent number 7,682,968
- Issue date Mar 23, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal carbide gate structure and method of fabrication
- Patent number 7,667,278
- Issue date Feb 23, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,655,557
- Issue date Feb 2, 2010
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reduction of soft error rates in integrated circuits
- Patent number 7,601,627
- Issue date Oct 13, 2009
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Patent number 7,566,938
- Issue date Jul 28, 2009
- International Business Machines Corporation
- Cyril Cabral, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and process for forming a self-aligned silicide contact
- Patent number 7,544,610
- Issue date Jun 9, 2009
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYE...
- Publication number 20130001784
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND
- Publication number 20120326314
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED CARBIDE SOURCE/DRAIN FET
- Publication number 20120302005
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Cyril Cabral, JR.
- B82 - NANO-TECHNOLOGY
Information Patent Application
FORMATION OF ALPHA PARTICLE SHIELDS IN CHIP PACKAGING
- Publication number 20120267768
- Publication date Oct 25, 2012
- International Business Machines Corporation
- Paul Stephen Andry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES AND METHODS OF FABRICATION
- Publication number 20120261788
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Qinghuang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND
- Publication number 20120228773
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ELECTRODEPOSIT NICKEL ON SILICON FOR FORMING CONTROLLABLE...
- Publication number 20120091589
- Publication date Apr 19, 2012
- International Business Machines Corporation
- CYRIL CABRAL, JR.
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
INTERCONNECT STRUCTURE FOR IMPROVED TIME DEPENDENT DIELECTRIC BREAK...
- Publication number 20120038056
- Publication date Feb 16, 2012
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABILIZED NICKEL SILICIDE INTERCONNECTS
- Publication number 20120038048
- Publication date Feb 16, 2012
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALPHA PARTICLE BLOCKING WIRE STRUCTURE AND METHOD FABRICATING SAME
- Publication number 20120028458
- Publication date Feb 2, 2012
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantless Dopant Segregation for Silicide Contacts
- Publication number 20120009771
- Publication date Jan 12, 2012
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure of Forming Silicide and Diffusion Barrier Laye...
- Publication number 20110309508
- Publication date Dec 22, 2011
- International Business Machines Corporation
- Cyril Cabral, JR.
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD AND STRUCTURE OF PHOTOVOLTAIC GRID STACKS BY SOLUTION BASED...
- Publication number 20110272009
- Publication date Nov 10, 2011
- International Business Machines Corporation
- Cyril Cabral, JR.
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method And Structure To Reduce Soft Error Rate Susceptibility In Se...
- Publication number 20110175211
- Publication date Jul 21, 2011
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...
- Publication number 20110165767
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dosimeter Powered by Passive RF Absorption
- Publication number 20110127438
- Publication date Jun 2, 2011
- International Business Machines Corporation
- Cyril Cabral, JR.
- G01 - MEASURING TESTING
Information Patent Application
SELF ALIGNED CARBIDE SOURCE/DRAIN FET
- Publication number 20110127493
- Publication date Jun 2, 2011
- International Business Machines Corporation
- Cyril Cabral, JR.
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FORMING ELECTRODEPOSITED CONTACTS
- Publication number 20110084393
- Publication date Apr 14, 2011
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE
- Publication number 20100323517
- Publication date Dec 23, 2010
- International Business Machines Corporation
- Brett C. Baker-O'Neal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE EMISSION ANALYSIS FOR SEMICONDUCTOR FABRICATION STEPS
- Publication number 20100084656
- Publication date Apr 8, 2010
- Cyril Cabral, JR.
- G01 - MEASURING TESTING
Information Patent Application
SILICIDE INTERCONNECT STRUCTURE
- Publication number 20090315182
- Publication date Dec 24, 2009
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mobility Enhanced FET Devices
- Publication number 20090298244
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR REDUCTION OF SOFT ERROR RATES IN INTEGRATED CIRCUITS
- Publication number 20090243053
- Publication date Oct 1, 2009
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE
- Publication number 20090206484
- Publication date Aug 20, 2009
- International Business Machines Corporation
- Brett C. Baker-O'Neal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS INTEGRATION SCHEME EMPLOYING A SILICIDE ELECTRODE AND A SILICI...
- Publication number 20090206413
- Publication date Aug 20, 2009
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...
- Publication number 20090152642
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT ELECTRODEPOSITION OF COPPER ONTO TA-ALLOY BARRIERS
- Publication number 20090130845
- Publication date May 21, 2009
- International Business Machines Corporation
- Brett Baker-O'Neal
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
LARGE-AREA ALPHA-PARTICLE DETECTOR AND METHOD FOR USE
- Publication number 20090039270
- Publication date Feb 12, 2009
- Cyril Cabral, JR.
- G01 - MEASURING TESTING
Information Patent Application
STRUCTURE AND METHOD OF FORMING ELECTRODEPOSITED CONTACTS
- Publication number 20090014878
- Publication date Jan 15, 2009
- International Business Machines Corporation
- Cyril Cabral, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE TRESHOLD VOLT...
- Publication number 20090011610
- Publication date Jan 8, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS

Cyril Cabral, JR.

Person

Patents Grantslast 30 patents

Method and structure of forming silicide and diffusion barrier laye...

Formation of alpha particle shields in chip packaging

Dosimeter powered by passive RF absorption

Selective implementation of barrier layers to achieve threshold vol...

Particle emission analysis for semiconductor fabrication steps

Self-aligned metal to form contacts to Ge containing substrates and...

Alpha particle blocking wire structure and method fabricating same

Reduction of silicide formation temperature on SiGe containing subs...

Method and process for forming a self-aligned silicide contact

Contact metallurgy structure

Opto-thermal annealing methods for forming metal gate and fully sil...

Microstructure modification in copper interconnect structure

Atomic layer deposition metallic contacts, gates and diffusion barr...

Selective implementation of barrier layers to achieve threshold vol...

Gate stack engineering by electrochemical processing utilizing thro...

High temperature processing compatible metal gate electrode for pFE...

Method of forming electrodeposited contacts

Microstructure modification in copper interconnect structure

Changing an electrical resistance of a resistor

Formation of fully silicided metal gate using dual self-aligned sil...

Structure for reduction of soft error rates in integrated circuits

CMOS integration scheme employing a silicide electrode and a silici...

Silicide interconnect structure

Selective implementation of barrier layers to achieve threshold vol...

Self-aligned metal to form contacts to Ge containing substrates and...

Metal carbide gate structure and method of fabrication

CMOS silicide metal gate integration

Method for reduction of soft error rates in integrated circuits

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Method and process for forming a self-aligned silicide contact

Patents Applicationslast 30 patents

METHOD AND STRUCTURE OF FORMING SILICIDE AND DIFFUSION BARRIER LAYE...

LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND

SELF ALIGNED CARBIDE SOURCE/DRAIN FET

FORMATION OF ALPHA PARTICLE SHIELDS IN CHIP PACKAGING

SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES AND METHODS OF FABRICATION

LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND

METHOD TO ELECTRODEPOSIT NICKEL ON SILICON FOR FORMING CONTROLLABLE...

INTERCONNECT STRUCTURE FOR IMPROVED TIME DEPENDENT DIELECTRIC BREAK...

STABILIZED NICKEL SILICIDE INTERCONNECTS

ALPHA PARTICLE BLOCKING WIRE STRUCTURE AND METHOD FABRICATING SAME

Implantless Dopant Segregation for Silicide Contacts

Method and Structure of Forming Silicide and Diffusion Barrier Laye...

METHOD AND STRUCTURE OF PHOTOVOLTAIC GRID STACKS BY SOLUTION BASED...

Method And Structure To Reduce Soft Error Rate Susceptibility In Se...

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...

Dosimeter Powered by Passive RF Absorption

SELF ALIGNED CARBIDE SOURCE/DRAIN FET

METHOD OF FORMING ELECTRODEPOSITED CONTACTS

MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE

PARTICLE EMISSION ANALYSIS FOR SEMICONDUCTOR FABRICATION STEPS

SILICIDE INTERCONNECT STRUCTURE

Mobility Enhanced FET Devices

STRUCTURE FOR REDUCTION OF SOFT ERROR RATES IN INTEGRATED CIRCUITS

MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE

CMOS INTEGRATION SCHEME EMPLOYING A SILICIDE ELECTRODE AND A SILICI...

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...

DIRECT ELECTRODEPOSITION OF COPPER ONTO TA-ALLOY BARRIERS

LARGE-AREA ALPHA-PARTICLE DETECTOR AND METHOD FOR USE

STRUCTURE AND METHOD OF FORMING ELECTRODEPOSITED CONTACTS

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE TRESHOLD VOLT...