DA TENG

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CULVER CITY, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Metal terminal edge for semiconductor structure and method of formi...
- Patent number 11,380,757
- Issue date Jul 5, 2022
- Zheng Zuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation for silicon carbide (SiC) device and method for fabrica...
- Patent number 10,497,636
- Issue date Dec 3, 2019
- AZ Power Inc.
- Zheng Zuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier structure for silicon carbide (SiC) power devices
- Patent number 9,960,247
- Issue date May 1, 2018
- Ruigang Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMI...
- Publication number 20210091177
- Publication date Mar 25, 2021
- AZ Power, Inc
- ZHENG ZUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMI...
- Publication number 20200312967
- Publication date Oct 1, 2020
- AZ Power, Inc
- ZHENG ZUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER STRUCTURE FOR SILICON CARBIDE (SiC) POWER DEVICES
- Publication number 20170207318
- Publication date Jul 20, 2017
- AZ Power, Inc
- RUIGANG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION FOR SILICON CARBIDE (SiC) DEVICE AND METHOD FOR FABRICA...
- Publication number 20170148645
- Publication date May 25, 2017
- AZ Power, Inc
- ZHENG ZUO
- H01 - BASIC ELECTRIC ELEMENTS