Da Zhang

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistors with different threshold voltages
- Patent number 8,962,410
- Issue date Feb 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having gate dielectric protection and structure
- Patent number 8,330,231
- Issue date Dec 11, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to improve body effect and junction capacitance
- Patent number 8,299,545
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Balancing NFET and PFET performance using straining layers
- Patent number 8,106,462
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective uniaxial stress modification for use with strained silico...
- Patent number 8,039,341
- Issue date Oct 18, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS process with optimized PMOS and NMOS transistor devices
- Patent number 8,003,454
- Issue date Aug 23, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a transistor having gate dielectric protection a...
- Patent number 7,927,989
- Issue date Apr 19, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for transistor fabrication with optimized performance
- Patent number 7,883,953
- Issue date Feb 8, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor resistor formed in metal gate stack
- Patent number 7,879,666
- Issue date Feb 1, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device using stress memorization
- Patent number 7,858,482
- Issue date Dec 28, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain stressors formed using in-situ epitaxial growth
- Patent number 7,833,852
- Issue date Nov 16, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a semiconductor fin
- Patent number 7,800,141
- Issue date Sep 21, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a semiconductor device having epitaxially grown source and...
- Patent number 7,795,089
- Issue date Sep 14, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for PFET enhancement
- Patent number 7,763,510
- Issue date Jul 27, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device using a stressor
- Patent number 7,727,870
- Issue date Jun 1, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with differently doped strained current electrode region
- Patent number 7,687,337
- Issue date Mar 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor structure and structure thereof
- Patent number 7,615,806
- Issue date Nov 10, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a planar and vertical semiconductor structure ha...
- Patent number 7,575,975
- Issue date Aug 18, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain stressor and method therefor
- Patent number 7,572,706
- Issue date Aug 11, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer source/drain stressor
- Patent number 7,544,997
- Issue date Jun 9, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process integrating source/drain stressors and interl...
- Patent number 7,538,002
- Issue date May 26, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a seed layer and...
- Patent number 7,514,313
- Issue date Apr 7, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Omar Zia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication process using etch stop layer to optimize...
- Patent number 7,494,856
- Issue date Feb 24, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stressors and method therefor
- Patent number 7,479,422
- Issue date Jan 20, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a CMOS device with stressor source/drain regions
- Patent number 7,446,026
- Issue date Nov 4, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a semiconductor fin
- Patent number 7,413,970
- Issue date Aug 19, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device with strain enhancement
- Patent number 7,282,415
- Issue date Oct 16, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming uniaxially strained devices
- Patent number 7,238,561
- Issue date Jul 3, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor fabrication using double etch/refill process
- Patent number 7,226,820
- Issue date Jun 5, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate device having a heterojunction source/drain and straine...
- Patent number 7,067,868
- Issue date Jun 27, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES
- Publication number 20130109141
- Publication date May 2, 2013
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A NON-VOLATILE MEMORY CELL HAVING A FLOATING GATE
- Publication number 20130102143
- Publication date Apr 25, 2013
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE
- Publication number 20120196413
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE
- Publication number 20110180883
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BALANCING NFET AND PFET PERFORMANCE USING STRAINING LAYERS
- Publication number 20110169096
- Publication date Jul 14, 2011
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A TRANSISTOR HAVING GATE DIELECTRIC PROTECTION A...
- Publication number 20110163360
- Publication date Jul 7, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PFET ENHANCEMENT
- Publication number 20100171180
- Publication date Jul 8, 2010
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Transistor Fabrication with Optimized Performance
- Publication number 20100078687
- Publication date Apr 1, 2010
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Resistor Formed in Metal Gate Stack
- Publication number 20100019328
- Publication date Jan 28, 2010
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS Process with Optimized PMOS and NMOS Transistor Devices
- Publication number 20090291540
- Publication date Nov 26, 2009
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Making Transistors and the Device Thereof
- Publication number 20090289280
- Publication date Nov 26, 2009
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE USING STRESS MEMORIZATION
- Publication number 20090242944
- Publication date Oct 1, 2009
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A TRANSISTOR HAVING GATE DIELECTRIC PROTECTION A...
- Publication number 20090026552
- Publication date Jan 29, 2009
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRESSORS FORMED USING IN-SITU EPITAXIAL GROWTH
- Publication number 20090026554
- Publication date Jan 29, 2009
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DIFFERENTLY DOPED STRAINED CURRENT ELECTRODE REGION
- Publication number 20090020783
- Publication date Jan 22, 2009
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A SEMICONDUCTOR FIN AND A PROCESS FOR F...
- Publication number 20080296620
- Publication date Dec 4, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A STRESSOR
- Publication number 20080261362
- Publication date Oct 23, 2008
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SEMICONDUCTOR DEVICE HAVING EPITAXIALLY GROWN SOURCE AND...
- Publication number 20080206940
- Publication date Aug 28, 2008
- Laegu Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRESSOR AND METHOD THEREFOR
- Publication number 20080203449
- Publication date Aug 28, 2008
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER SOURCE/DRAIN STRESSOR
- Publication number 20080197412
- Publication date Aug 21, 2008
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE UNIAXIAL STRESS MODIFICATION FOR USE WITH STRAINED SILICO...
- Publication number 20080014688
- Publication date Jan 17, 2008
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor fabrication process using etch stop layer to optimize...
- Publication number 20070238250
- Publication date Oct 11, 2007
- Freescale Semiconductor, Inc.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device and a process for forming the electronic device
- Publication number 20070235813
- Publication date Oct 11, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Omar Zia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a semiconductor fin and a process for f...
- Publication number 20070215908
- Publication date Sep 20, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with stressors and method therefor
- Publication number 20070210314
- Publication date Sep 13, 2007
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor process integrating source/drain stressors and interl...
- Publication number 20070202651
- Publication date Aug 30, 2007
- Freescale Semiconductor, Inc.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stressed-channel CMOS transistors
- Publication number 20070184600
- Publication date Aug 9, 2007
- FREESCALE SEMICONDUCTOR
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device
- Publication number 20070184601
- Publication date Aug 9, 2007
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor structure and structure thereof
- Publication number 20070099353
- Publication date May 3, 2007
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor structure and structure thereof
- Publication number 20070099361
- Publication date May 3, 2007
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistors with different threshold voltages

Transistor having gate dielectric protection and structure

Method and structure to improve body effect and junction capacitance

Balancing NFET and PFET performance using straining layers

Selective uniaxial stress modification for use with strained silico...

CMOS process with optimized PMOS and NMOS transistor devices

Method for forming a transistor having gate dielectric protection a...

Method for transistor fabrication with optimized performance

Semiconductor resistor formed in metal gate stack

Method of forming a semiconductor device using stress memorization

Source/drain stressors formed using in-situ epitaxial growth

Electronic device including a semiconductor fin

Forming a semiconductor device having epitaxially grown source and...

Method for PFET enhancement

Method of making a semiconductor device using a stressor

Transistor with differently doped strained current electrode region

Method for forming a semiconductor structure and structure thereof

Method for forming a planar and vertical semiconductor structure ha...

Source/drain stressor and method therefor

Multi-layer source/drain stressor

Semiconductor process integrating source/drain stressors and interl...

Process of forming an electronic device including a seed layer and...

Semiconductor fabrication process using etch stop layer to optimize...

Semiconductor device with stressors and method therefor

Method of forming a CMOS device with stressor source/drain regions

Process of forming an electronic device including a semiconductor fin

Method for making a semiconductor device with strain enhancement

Method for forming uniaxially strained devices

Transistor fabrication using double etch/refill process

Double gate device having a heterojunction source/drain and straine...

Patents Applicationslast 30 patents

TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES

METHOD OF MAKING A NON-VOLATILE MEMORY CELL HAVING A FLOATING GATE

METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE

METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE

BALANCING NFET AND PFET PERFORMANCE USING STRAINING LAYERS

METHOD FOR FORMING A TRANSISTOR HAVING GATE DIELECTRIC PROTECTION A...

METHOD FOR PFET ENHANCEMENT

Method for Transistor Fabrication with Optimized Performance

Semiconductor Resistor Formed in Metal Gate Stack

CMOS Process with Optimized PMOS and NMOS Transistor Devices

Method for Making Transistors and the Device Thereof

METHOD OF FORMING A SEMICONDUCTOR DEVICE USING STRESS MEMORIZATION

METHOD FOR FORMING A TRANSISTOR HAVING GATE DIELECTRIC PROTECTION A...

SOURCE/DRAIN STRESSORS FORMED USING IN-SITU EPITAXIAL GROWTH

TRANSISTOR WITH DIFFERENTLY DOPED STRAINED CURRENT ELECTRODE REGION

ELECTRONIC DEVICE INCLUDING A SEMICONDUCTOR FIN AND A PROCESS FOR F...

METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A STRESSOR

FORMING A SEMICONDUCTOR DEVICE HAVING EPITAXIALLY GROWN SOURCE AND...

SOURCE/DRAIN STRESSOR AND METHOD THEREFOR

MULTI-LAYER SOURCE/DRAIN STRESSOR

SELECTIVE UNIAXIAL STRESS MODIFICATION FOR USE WITH STRAINED SILICO...

Semiconductor fabrication process using etch stop layer to optimize...

Electronic device and a process for forming the electronic device

Electronic device including a semiconductor fin and a process for f...

Semiconductor device with stressors and method therefor

Semiconductor process integrating source/drain stressors and interl...

Stressed-channel CMOS transistors

Method of forming a semiconductor device

Method for forming a semiconductor structure and structure thereof

Method for forming a semiconductor structure and structure thereof