Dae G. Yang

Person

Watervliet, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure having gap fill dielectric layer disposed b...
- Patent number 9,735,154
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and method of formation
- Patent number 9,608,086
- Issue date Mar 28, 2017
- Global Foundries Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor fins
- Patent number 9,196,499
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor (FinFET) device formed using a single s...
- Patent number 9,159,630
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming finFETs with self aligned fin formation
- Patent number 9,147,696
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming fins at tight fin pitches
- Patent number 9,105,478
- Issue date Aug 11, 2015
- GLOBALFOUNDRIES Inc.
- Andy Wei
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Facilitating mask pattern formation
- Patent number 9,034,767
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of gate structure sidewall(s) to facilitate sidew...
- Patent number 8,993,445
- Issue date Mar 31, 2015
- GLOBALFOUNDRIES Inc.
- Dae-Han Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double patterning via triangular shaped sidewall spacers
- Patent number 8,969,205
- Issue date Mar 3, 2015
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming finfet devices with a shared gate structure
- Patent number 8,936,986
- Issue date Jan 20, 2015
- GLOBALFOUNDRIES Inc.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming isolation structures and fins on a FinFET semico...
- Patent number 8,753,940
- Issue date Jun 17, 2014
- GLOBALFOUNDRIES Inc.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate formed on a uniform surface and...
- Patent number 8,697,501
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Dae-han Choi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL GATE STRUCTURE AND METHOD OF FORMATION
- Publication number 20170162688
- Publication date Jun 8, 2017
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20160043081
- Publication date Feb 11, 2016
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE AND METHOD OF FORMATION
- Publication number 20150340461
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150333067
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES
- Publication number 20150287595
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES INC.
- Andy WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20150279684
- Publication date Oct 1, 2015
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTO...
- Publication number 20150270175
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE
- Publication number 20150255353
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACILITATING MASK PATTERN FORMATION
- Publication number 20150132962
- Publication date May 14, 2015
- GLOBALFOUNDRIES INC.
- Xiang HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES
- Publication number 20150115418
- Publication date Apr 30, 2015
- GLOBALFOUNDRIES INC.
- Andy WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION
- Publication number 20150091094
- Publication date Apr 2, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS
- Publication number 20140291735
- Publication date Oct 2, 2014
- GLOBAL FOUNDRIES, INC.
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINFET DEVICES WITH A SHARED GATE STRUCTURE
- Publication number 20140273429
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEW...
- Publication number 20140199845
- Publication date Jul 17, 2014
- GLOBALFOUNDRIES, Inc.
- Dae-Han CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20140148011
- Publication date May 29, 2014
- GLOBALFOUNDRIES INC.
- Dae-han Choi
- H01 - BASIC ELECTRIC ELEMENTS

Dae G. Yang

Person

Patents Grantslast 30 patents

Semiconductor structure having gap fill dielectric layer disposed b...

Metal gate structure and method of formation

Method of forming semiconductor fins

Fin field-effect transistor (FinFET) device formed using a single s...

Devices and methods of forming finFETs with self aligned fin formation

Devices and methods of forming fins at tight fin pitches

Facilitating mask pattern formation

Selective removal of gate structure sidewall(s) to facilitate sidew...

Double patterning via triangular shaped sidewall spacers

Methods of forming finfet devices with a shared gate structure

Methods of forming isolation structures and fins on a FinFET semico...

Semiconductor device having a gate formed on a uniform surface and...

Patents Applicationslast 30 patents

METAL GATE STRUCTURE AND METHOD OF FORMATION

METHOD OF FORMING SEMICONDUCTOR FINS

METAL GATE STRUCTURE AND METHOD OF FORMATION

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION

DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES

METHOD OF FORMING SEMICONDUCTOR FINS

PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTO...

FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE

FACILITATING MASK PATTERN FORMATION

DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES

DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION

DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS

METHODS OF FORMING FINFET DEVICES WITH A SHARED GATE STRUCTURE

SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEW...

METHOD OF FORMING SEMICONDUCTOR FINS