Dae-Gyu Park

Person

Poughquaq, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of stabilizing hydrogenated amorphous silicon and amorphous...
- Patent number 9,812,599
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,417
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,416
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dopant junction for a group III-V semiconductor device
- Patent number 9,679,775
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature spacer for advanced semiconductor devices
- Patent number 9,590,054
- Issue date Mar 7, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated fin and strap structure for an access transistor of a tr...
- Patent number 9,576,964
- Issue date Feb 21, 2017
- International Businesss Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Changing effective work function using ion implantation during dual...
- Patent number 9,564,505
- Issue date Feb 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated fin and strap structure for an access...
- Patent number 9,564,444
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow extension junction
- Patent number 9,553,107
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dopant junction for a group III-V semiconductor device
- Patent number 9,418,846
- Issue date Aug 16, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,391,171
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and defect free epitaxial semiconductor material for...
- Patent number 9,349,649
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance and defect free epitaxial semiconductor material for...
- Patent number 9,349,650
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D atomic layer gate or junction extender
- Patent number 9,318,318
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow extension junction
- Patent number 9,306,038
- Issue date Apr 5, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature spacer for advanced semiconductor devices
- Patent number 9,293,557
- Issue date Mar 22, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET field-effect transistors with atomic layer doping
- Patent number 9,287,136
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D transistor channel mobility enhancement
- Patent number 9,275,907
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K/metal gate stack using capping layer methods, IC and related...
- Patent number 9,236,314
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES, INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of replacement source/drain for 3D CMOS transistors
- Patent number 9,105,741
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of stabilizing hydrogenated amorphous silicon and amorphous...
- Patent number 9,099,585
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Lateral heterojunction bipolar transistors
- Patent number 9,059,016
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Ge-containing fins and compound semiconductor fins
- Patent number 9,054,192
- Issue date Jun 9, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field-effect transistors with atomic layer doping
- Patent number 9,048,261
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process variability tolerant hard mask for replacement metal gate f...
- Patent number 9,034,748
- Issue date May 19, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
3D transistor channel mobility enhancement
- Patent number 9,023,697
- Issue date May 5, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of stabilizing hydrogenated amorphous silicon and amorphous...
- Patent number 8,778,448
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Changing effective work function using ion implantation during dual...
- Patent number 8,753,936
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate transistors using bi-layer hardmask
- Patent number 8,748,252
- Issue date Jun 10, 2014
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of high-K metal gate semiconductor transistor
- Patent number 8,643,061
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE
- Publication number 20160329211
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322500
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322264
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE
- Publication number 20160254150
- Publication date Sep 1, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW EXTENSION JUNCTION
- Publication number 20160172381
- Publication date Jun 16, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES
- Publication number 20160141377
- Publication date May 19, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...
- Publication number 20160099249
- Publication date Apr 7, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...
- Publication number 20150380314
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Kevin K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...
- Publication number 20150380489
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Kevin K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS...
- Publication number 20150340532
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20150236118
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES
- Publication number 20150236115
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20150214364
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF GE-CONTAINING FINS AND COMPOUND SEMICONDUCTOR FINS
- Publication number 20150179739
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...
- Publication number 20150064897
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
- Publication number 20150041858
- Publication date Feb 12, 2015
- International Business Machines Corporation
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT
- Publication number 20150041911
- Publication date Feb 12, 2015
- GLOBALFOUNDRIES, Inc.
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...
- Publication number 20140299882
- Publication date Oct 9, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...
- Publication number 20140225199
- Publication date Aug 14, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK
- Publication number 20140148003
- Publication date May 29, 2014
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS
- Publication number 20140070316
- Publication date Mar 13, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...
- Publication number 20140015051
- Publication date Jan 16, 2014
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...
- Publication number 20130256757
- Publication date Oct 3, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...
- Publication number 20130260526
- Publication date Oct 3, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...
- Publication number 20130140634
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K DIELECTRIC AND SILICON NITRIDE BOX REGION
- Publication number 20130093039
- Publication date Apr 18, 2013
- International Business Machines Corporation
- EFFENDI LEOBANDUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20130032883
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
- Publication number 20130032865
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS...
- Publication number 20130019944
- Publication date Jan 24, 2013
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS...
- Publication number 20130019945
- Publication date Jan 24, 2013
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS

Dae-Gyu Park

Person

Patents Grantslast 30 patents

Method of stabilizing hydrogenated amorphous silicon and amorphous...

Fin field effect transistor including a strained epitaxial semicond...

Fin field effect transistor including a strained epitaxial semicond...

Selective dopant junction for a group III-V semiconductor device

Low temperature spacer for advanced semiconductor devices

Integrated fin and strap structure for an access transistor of a tr...

Changing effective work function using ion implantation during dual...

Method of forming integrated fin and strap structure for an access...

Shallow extension junction

Selective dopant junction for a group III-V semiconductor device

Fin field effect transistor including a strained epitaxial semicond...

Low resistance and defect free epitaxial semiconductor material for...

Low resistance and defect free epitaxial semiconductor material for...

3D atomic layer gate or junction extender

Shallow extension junction

Low temperature spacer for advanced semiconductor devices

FinFET field-effect transistors with atomic layer doping

3D transistor channel mobility enhancement

High-K/metal gate stack using capping layer methods, IC and related...

Method of replacement source/drain for 3D CMOS transistors

Method of stabilizing hydrogenated amorphous silicon and amorphous...

Lateral heterojunction bipolar transistors

Integration of Ge-containing fins and compound semiconductor fins

Fabrication of field-effect transistors with atomic layer doping

Process variability tolerant hard mask for replacement metal gate f...

3D transistor channel mobility enhancement

Method of stabilizing hydrogenated amorphous silicon and amorphous...

Changing effective work function using ion implantation during dual...

Replacement metal gate transistors using bi-layer hardmask

Structure of high-K metal gate semiconductor transistor

Patents Applicationslast 30 patents

SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE

SHALLOW EXTENSION JUNCTION

LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES

INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...

LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...

LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR...

METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS...

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

LOW TEMPERATURE SPACER FOR ADVANCED SEMICONDUCTOR DEVICES

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

INTEGRATION OF GE-CONTAINING FINS AND COMPOUND SEMICONDUCTOR FINS

PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...

3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT

3D TRANSISTOR CHANNEL MOBILITY ENHANCEMENT

INTEGRATED FIN AND STRAP STRUCTURE FOR AN ACCESS TRANSISTOR OF A TR...

CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...

REPLACEMENT METAL GATE TRANSISTORS USING BI-LAYER HARDMASK

REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS

METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...

SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...

SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMIT...

METHOD OF REPLACING SILICON WITH METAL IN INTEGRATED CIRCUIT CHIP F...

HIGH-K DIELECTRIC AND SILICON NITRIDE BOX REGION

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING

METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS...

METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS...