Dae-han Choi

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure having gap fill dielectric layer disposed b...
- Patent number 9,735,154
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor fins
- Patent number 9,196,499
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor (FinFET) device formed using a single s...
- Patent number 9,159,630
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES Inc.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods of forming fins at tight fin pitches
- Patent number 9,105,478
- Issue date Aug 11, 2015
- GLOBALFOUNDRIES Inc.
- Andy Wei
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Facilitating mask pattern formation
- Patent number 9,034,767
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of gate structure sidewall(s) to facilitate sidew...
- Patent number 8,993,445
- Issue date Mar 31, 2015
- GLOBALFOUNDRIES Inc.
- Dae-Han Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double patterning via triangular shaped sidewall spacers
- Patent number 8,969,205
- Issue date Mar 3, 2015
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask formation processing
- Patent number 8,871,651
- Issue date Oct 28, 2014
- GLOBALFOUNDRIES Inc.
- Dae Han Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with improved semicondu...
- Patent number 8,835,328
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES, INC.
- Wontae Hwang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device having a gate formed on a uniform surface and...
- Patent number 8,697,501
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Dae-han Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective fin cut process
- Patent number 8,658,536
- Issue date Feb 25, 2014
- GLOBALFOUNDRIES Inc.
- Dae-Han Choi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20160043081
- Publication date Feb 11, 2016
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CONFINED EPITAXY
- Publication number 20160005868
- Publication date Jan 7, 2016
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES
- Publication number 20150287595
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES INC.
- Andy WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20150279684
- Publication date Oct 1, 2015
- GLOBALFOUNDRIES INC.
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTO...
- Publication number 20150270175
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Xiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE
- Publication number 20150255353
- Publication date Sep 10, 2015
- GLOBALFOUNDRIES INC.
- Jing WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACILITATING MASK PATTERN FORMATION
- Publication number 20150132962
- Publication date May 14, 2015
- GLOBALFOUNDRIES INC.
- Xiang HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES
- Publication number 20150115418
- Publication date Apr 30, 2015
- GLOBALFOUNDRIES INC.
- Andy WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS
- Publication number 20140291735
- Publication date Oct 2, 2014
- GLOBAL FOUNDRIES, INC.
- HongLiang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED SEMICONDU...
- Publication number 20140227879
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES, Inc.
- Wontae Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEW...
- Publication number 20140199845
- Publication date Jul 17, 2014
- GLOBALFOUNDRIES, Inc.
- Dae-Han CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE FORMATION PROCESSES
- Publication number 20140179093
- Publication date Jun 26, 2014
- GLOBALFOUNDRIES, Inc.
- Dae-Han CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR FINS
- Publication number 20140148011
- Publication date May 29, 2014
- GLOBALFOUNDRIES INC.
- Dae-han Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FIN CUT PROCESS
- Publication number 20140065828
- Publication date Mar 6, 2014
- GLOBALFOUNDRIES, Inc.
- Dae-Han CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS USING TAILORED CHAMFERE...
- Publication number 20130224944
- Publication date Aug 29, 2013
- GLOBALFOUNDRIES INC.
- Puneet Khanna
- H01 - BASIC ELECTRIC ELEMENTS

Dae-han Choi

Person

Patents Grantslast 30 patents

Semiconductor structure having gap fill dielectric layer disposed b...

Method of forming semiconductor fins

Fin field-effect transistor (FinFET) device formed using a single s...

Devices and methods of forming fins at tight fin pitches

Facilitating mask pattern formation

Selective removal of gate structure sidewall(s) to facilitate sidew...

Double patterning via triangular shaped sidewall spacers

Mask formation processing

Methods for fabricating integrated circuits with improved semicondu...

Semiconductor device having a gate formed on a uniform surface and...

Selective fin cut process

Patents Applicationslast 30 patents

METHOD OF FORMING SEMICONDUCTOR FINS

FINFET WITH CONFINED EPITAXY

DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES

METHOD OF FORMING SEMICONDUCTOR FINS

PARTIALLY CRYSTALLIZED FIN HARD MASK FOR FIN FIELD-EFFECT-TRANSISTO...

FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE

FACILITATING MASK PATTERN FORMATION

DEVICES AND METHODS OF FORMING FINS AT TIGHT FIN PITCHES

DOUBLE PATTERNING VIA TRIANGULAR SHAPED SIDEWALL SPACERS

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED SEMICONDU...

SELECTIVE REMOVAL OF GATE STRUCTURE SIDEWALL(S) TO FACILITATE SIDEW...

GATE STRUCTURE FORMATION PROCESSES

METHOD OF FORMING SEMICONDUCTOR FINS

SELECTIVE FIN CUT PROCESS

METHODS FOR FABRICATING INTEGRATED CIRCUITS USING TAILORED CHAMFERE...