DAE-SUB JUNG

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,545,396
- Issue date Jan 3, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with isolation structures in doped region a...
- Patent number 11,239,358
- Issue date Feb 1, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and manufacturing method thereof
- Patent number 11,121,252
- Issue date Sep 14, 2021
- Semiconductor Manufacturing (Beijing) Intel Corporation
- Deyan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacture thereof
- Patent number 10,804,105
- Issue date Oct 13, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacture thereof
- Patent number 10,600,650
- Issue date Mar 24, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 10,593,781
- Issue date Mar 17, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- De Yan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating power semiconductor device
- Patent number 10,490,629
- Issue date Nov 26, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a recessed insulation region and fab...
- Patent number 10,411,115
- Issue date Sep 10, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor
- Patent number 10,340,304
- Issue date Jul 2, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with semiconductor pillars
- Patent number 10,090,403
- Issue date Oct 2, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor and fabrication method thereof
- Patent number 10,038,027
- Issue date Jul 31, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Powers semiconductor device
- Patent number 10,032,865
- Issue date Jul 24, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 9,837,323
- Issue date Dec 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chih Chun Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and fabrication method thereof
- Patent number 9,711,627
- Issue date Jul 18, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused MOSFET and fabrication method thereof
- Patent number 9,536,742
- Issue date Jan 3, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub Jung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210376145
- Publication date Dec 2, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Deyan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210028065
- Publication date Jan 28, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200273989
- Publication date Aug 27, 2020
- Semiconductor Manufacturing International (Beijing) Corporation
- Deyan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20200251590
- Publication date Aug 6, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
- Publication number 20200185223
- Publication date Jun 11, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
- Publication number 20180315603
- Publication date Nov 1, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae Sub JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING POWER SEMICONDUCTOR DEVICE
- Publication number 20180308932
- Publication date Oct 25, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- DAE SUB JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS IMAGE SENSOR
- Publication number 20180308893
- Publication date Oct 25, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20170358661
- Publication date Dec 14, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- De Yan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20170288043
- Publication date Oct 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- DAE SUB JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20170271482
- Publication date Sep 21, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Dae-Sub JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS IMAGE SENSOR AND FABRICATION METHOD THEREOF
- Publication number 20170200758
- Publication date Jul 13, 2017
- Semiconductor Manufacturing International (Beijing)
- Dae-Sub JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20170005094
- Publication date Jan 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHIH CHUN TAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160293698
- Publication date Oct 6, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- DAE SUB JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160293745
- Publication date Oct 6, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- DAE SUB JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150364598
- Publication date Dec 17, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- DAE-SUB JUNG
- H01 - BASIC ELECTRIC ELEMENTS

DAE-SUB JUNG

Person

Patents Grantslast 30 patents

Semiconductor structure and method for forming the same

Semiconductor structure with isolation structures in doped region a...

LDMOS device and manufacturing method thereof

Semiconductor device and manufacture thereof

Semiconductor device and manufacture thereof

Semiconductor device and fabrication method thereof

Method for fabricating power semiconductor device

Semiconductor device including a recessed insulation region and fab...

CMOS image sensor

Power semiconductor device with semiconductor pillars

CMOS image sensor and fabrication method thereof

Powers semiconductor device

Semiconductor structure and fabrication method thereof

Power semiconductor device and fabrication method thereof

Lateral double-diffused MOSFET and fabrication method thereof

Patents Applicationslast 30 patents

LDMOS DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

LDMOS DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

METHOD FOR FABRICATING POWER SEMICONDUCTOR DEVICE

CMOS IMAGE SENSOR

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

CMOS IMAGE SENSOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF