Daeshik Kim

Person

Hwaseong-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device which generates improved read current according to si...
- Patent number 12,094,509
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device which generates improved write voltage according to s...
- Patent number 11,894,038
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device including reference memory cell with fixe...
- Patent number 10,210,931
- Issue date Feb 19, 2019
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of operating a magnetic memory device
- Patent number 9,183,913
- Issue date Nov 10, 2015
- Samsung Electronics Co., Ltd.
- Daeshik Kim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THEREOF
- Publication number 20240161824
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Kyungmin LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...
- Publication number 20240119983
- Publication date Apr 11, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE CONFIGURED TO GENERATE READ CURRENT BASED ON SIZE OF...
- Publication number 20240062795
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WHICH GENERATES IMPROVED READ CURRENT ACCORDING TO SI...
- Publication number 20220328085
- Publication date Oct 13, 2022
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...
- Publication number 20220051710
- Publication date Feb 17, 2022
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE INCLUDING REFERENCE MEMORY CELL WITH FIXE...
- Publication number 20180137913
- Publication date May 17, 2018
- Samsung Electronics Co., Ltd.
- Daeshik KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Systems that Perform Rewrites of Resistive Memory Elements a...
- Publication number 20160147599
- Publication date May 26, 2016
- Daeshik Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS OF OPERATING A MAGNETIC MEMORY DEVICE
- Publication number 20150063018
- Publication date Mar 5, 2015
- Daeshik Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC FIELD GENERATION UNIT AND SEMICONDUCTOR TEST APPARATUS INC...
- Publication number 20140070800
- Publication date Mar 13, 2014
- Ho-Youn CHO
- G01 - MEASURING TESTING

Daeshik Kim

Person

Patents Grantslast 30 patents

Memory device which generates improved read current according to si...

Memory device which generates improved write voltage according to s...

Nonvolatile memory device including reference memory cell with fixe...

Methods of operating a magnetic memory device

Patents Applicationslast 30 patents

MEMORY DEVICE AND OPERATING METHOD OF THEREOF

MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...

MEMORY DEVICE CONFIGURED TO GENERATE READ CURRENT BASED ON SIZE OF...

MEMORY DEVICE WHICH GENERATES IMPROVED READ CURRENT ACCORDING TO SI...

MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO S...

NONVOLATILE MEMORY DEVICE INCLUDING REFERENCE MEMORY CELL WITH FIXE...

Memory Systems that Perform Rewrites of Resistive Memory Elements a...

METHODS OF OPERATING A MAGNETIC MEMORY DEVICE

MAGNETIC FIELD GENERATION UNIT AND SEMICONDUCTOR TEST APPARATUS INC...