Daewon Yang

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
CMOS structures and methods for improving yield
- Patent number 9,318,344
- Issue date Apr 19, 2016
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for angular high density plasma chemical vapor...
- Patent number 9,080,239
- Issue date Jul 14, 2015
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for angular high density plasma chemical vapor...
- Patent number 9,016,236
- Issue date Apr 28, 2015
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Shallow trench isolation for device including deep trench capacitors
- Patent number 8,679,938
- Issue date Mar 25, 2014
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling structure height
- Patent number 8,557,649
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 8,030,707
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to fabricate MOSFET with short gate
- Patent number 7,943,467
- Issue date May 17, 2011
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compressive nitride film and method of manufacturing thereof
- Patent number 7,851,376
- Issue date Dec 14, 2010
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming nitride films with high compressive stress for im...
- Patent number 7,804,136
- Issue date Sep 28, 2010
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for reducing threshold voltage variation
- Patent number 7,750,414
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP/PECVD methods of fabricating stress nitride structures for fiel...
- Patent number 7,615,432
- Issue date Nov 10, 2009
- Samsung Electronics Co., Ltd.
- Junjung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interconnect including a dielectric cap having...
- Patent number 7,563,704
- Issue date Jul 21, 2009
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structures and methods using self-aligned dual stressed layers
- Patent number 7,521,307
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer stress liner for MOSFETS
- Patent number 7,521,308
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Deleep R. Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compressive nitride film and method of manufacturing thereof
- Patent number 7,514,370
- Issue date Apr 7, 2009
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming nitride films with high compressive stress for im...
- Patent number 7,491,660
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride films with high compressive stress for im...
- Patent number 7,462,527
- Issue date Dec 9, 2008
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bilayer cap structure including HDP/bHDP films for conductive metal...
- Patent number 7,179,760
- Issue date Feb 20, 2007
- International Buisness Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP process for high aspect ratio gap filling
- Patent number 6,914,015
- Issue date Jul 5, 2005
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilization of fluorine-containing dielectric materials in a meta...
- Patent number 6,911,378
- Issue date Jun 28, 2005
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS STRUCTURES AND METHODS FOR IMPROVING YIELD
- Publication number 20150087121
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELETRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIALL...
- Publication number 20140302685
- Publication date Oct 9, 2014
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR DEVICE INCLUDING DEEP TRENCH CAPACITORS
- Publication number 20130200482
- Publication date Aug 8, 2013
- International Business Machines Corporation
- Sunfei FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING STRUCTURE HEIGHT
- Publication number 20130102125
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR...
- Publication number 20120190203
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MODIFICATION OF NITRIDE TOP LAYER
- Publication number 20120027956
- Publication date Feb 2, 2012
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE TO REMEDY BOX UNDERCUT...
- Publication number 20100213522
- Publication date Aug 26, 2010
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR...
- Publication number 20100029082
- Publication date Feb 4, 2010
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FABRICATING A GATE STRUCTURE
- Publication number 20090311855
- Publication date Dec 17, 2009
- Richard A. Bruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Reducing Threshold Voltage Variation
- Publication number 20090294923
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO MAKE HIGH PERFORMANCE MOSFET WITH FULLY SIL...
- Publication number 20090236676
- Publication date Sep 24, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS STRUCTURES AND METHODS USING SELF-ALIGNED DUAL STRESSED LAYERS
- Publication number 20090194819
- Publication date Aug 6, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FABRICATE MOSFET WITH SHORT GATE
- Publication number 20090184378
- Publication date Jul 23, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPRESSIVE NITRIDE FILM AND METHOD OF MANUFACTURING THEREOF
- Publication number 20090137109
- Publication date May 28, 2009
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FABRICATING A GATE STRUCTURE AND THE STRUCTURE THEREOF
- Publication number 20090101980
- Publication date Apr 23, 2009
- International Business Machines Corporation
- Richard A. Bruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIAL...
- Publication number 20080173985
- Publication date Jul 24, 2008
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL LAYER STRESS LINER FOR MOSFETS
- Publication number 20080153217
- Publication date Jun 26, 2008
- Deleep R. Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE PLASMA CHARGE DAMAGE FROM HIGH DENSITY PLASMA CHEM...
- Publication number 20080146039
- Publication date Jun 19, 2008
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR
- Publication number 20080142897
- Publication date Jun 19, 2008
- Chartered Semiconductor Manufacturing LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IM...
- Publication number 20080045039
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IM...
- Publication number 20080036007
- Publication date Feb 14, 2008
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPRESSIVE NITRIDE FILM AND METHOD OF MANUFACTURING THEREOF
- Publication number 20070269992
- Publication date Nov 22, 2007
- International Business Machines Corporation
- Daewon Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CMOS STRUCTURES AND METHODS FOR IMPROVING YIELD
- Publication number 20070252230
- Publication date Nov 1, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS STRUCTURES AND METHODS USING SELF-ALIGNED DUAL STRESSED LAYERS
- Publication number 20070252214
- Publication date Nov 1, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HDP/PECVD methods of fabricating stress nitride structures for fiel...
- Publication number 20070096220
- Publication date May 3, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Junjung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING AN INTERCONNECT INCLUDING A DIELECT...
- Publication number 20070063348
- Publication date Mar 22, 2007
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IM...
- Publication number 20070007548
- Publication date Jan 11, 2007
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BILAYER CAP STRUCTURE INCLUDING HDP/bHDP FILMS FOR CONDUCTIVE METAL...
- Publication number 20060270245
- Publication date Nov 30, 2006
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HDP PROCESS FOR HIGH ASPECT RATIO GAP FILLING
- Publication number 20050095872
- Publication date May 5, 2005
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABILIZATION OF FLUORINE-CONTAINING DIELECTRIC MATERIALS IN A META...
- Publication number 20040266140
- Publication date Dec 30, 2004
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS

Daewon Yang

Person

Patents Grantslast 30 patents

CMOS structures and methods for improving yield

Method and apparatus for angular high density plasma chemical vapor...

Method and apparatus for angular high density plasma chemical vapor...

Shallow trench isolation for device including deep trench capacitors

Method for controlling structure height

Semiconductor structure

Structure and method to fabricate MOSFET with short gate

Compressive nitride film and method of manufacturing thereof

Method of forming nitride films with high compressive stress for im...

Structure and method for reducing threshold voltage variation

HDP/PECVD methods of fabricating stress nitride structures for fiel...

Method of forming an interconnect including a dielectric cap having...

CMOS structures and methods using self-aligned dual stressed layers

Dual layer stress liner for MOSFETS

Compressive nitride film and method of manufacturing thereof

Method of forming nitride films with high compressive stress for im...

Method of forming nitride films with high compressive stress for im...

Bilayer cap structure including HDP/bHDP films for conductive metal...

HDP process for high aspect ratio gap filling

Stabilization of fluorine-containing dielectric materials in a meta...

Patents Applicationslast 30 patents

CMOS STRUCTURES AND METHODS FOR IMPROVING YIELD

DIELETRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIALL...

SHALLOW TRENCH ISOLATION FOR DEVICE INCLUDING DEEP TRENCH CAPACITORS

METHOD FOR CONTROLLING STRUCTURE HEIGHT

METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR...

MODIFICATION OF NITRIDE TOP LAYER

METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE TO REMEDY BOX UNDERCUT...

METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR...

METHOD OF FABRICATING A GATE STRUCTURE

Structure and Method for Reducing Threshold Voltage Variation

STRUCTURE AND METHOD TO MAKE HIGH PERFORMANCE MOSFET WITH FULLY SIL...

CMOS STRUCTURES AND METHODS USING SELF-ALIGNED DUAL STRESSED LAYERS

STRUCTURE AND METHOD TO FABRICATE MOSFET WITH SHORT GATE

COMPRESSIVE NITRIDE FILM AND METHOD OF MANUFACTURING THEREOF

METHOD OF FABRICATING A GATE STRUCTURE AND THE STRUCTURE THEREOF

DIELECTRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIAL...

DUAL LAYER STRESS LINER FOR MOSFETS

METHOD TO REDUCE PLASMA CHARGE DAMAGE FROM HIGH DENSITY PLASMA CHEM...

INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR

METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IM...

METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IM...

COMPRESSIVE NITRIDE FILM AND METHOD OF MANUFACTURING THEREOF

CMOS STRUCTURES AND METHODS FOR IMPROVING YIELD

CMOS STRUCTURES AND METHODS USING SELF-ALIGNED DUAL STRESSED LAYERS

HDP/PECVD methods of fabricating stress nitride structures for fiel...

METHOD AND STRUCTURE OF FORMING AN INTERCONNECT INCLUDING A DIELECT...

METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IM...

BILAYER CAP STRUCTURE INCLUDING HDP/bHDP FILMS FOR CONDUCTIVE METAL...

HDP PROCESS FOR HIGH ASPECT RATIO GAP FILLING

STABILIZATION OF FLUORINE-CONTAINING DIELECTRIC MATERIALS IN A META...