Dah Wen Tsang

Person

Bend, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Edge termination for high voltage semiconductor device
- Patent number 8,110,888
- Issue date Feb 7, 2012
- Microsemi Corporation
- Jinshu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned power MOSFET device with recessed gate and source
- Patent number 5,801,417
- Issue date Sep 1, 1998
- Advanced Power Technology, Inc.
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density power device fabrication process using undercut oxide...
- Patent number 5,648,283
- Issue date Jul 15, 1997
- Advanced Power Technology, Inc.
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device with platinum lifetime control and reduced gaw
- Patent number 5,528,058
- Issue date Jun 18, 1996
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density power device fabrication process
- Patent number 5,283,201
- Issue date Feb 1, 1994
- Advanced Power Technology, Inc.
- Dah W. Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device with platinum lifetime control having gradient or profi...
- Patent number 5,283,202
- Issue date Feb 1, 1994
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT process to produce platinum lifetime control
- Patent number 5,262,336
- Issue date Nov 16, 1993
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT process to produce platinum lifetime control
- Patent number 5,190,885
- Issue date Mar 2, 1993
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topographic pattern delineated power MOSFET with profile tailored r...
- Patent number 5,045,903
- Issue date Sep 3, 1991
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making topographic pattern delineated power MOSFET with p...
- Patent number 5,019,522
- Issue date May 28, 1991
- Advanced Power Technology, Inc.
- Theodore O. Meyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EDGE TERMINATION FOR HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20090072340
- Publication date Mar 19, 2009
- MICROSEMI CORPORATION
- Jinshu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned power MOSFET with enhanced base region
- Publication number 20020074585
- Publication date Jun 20, 2002
- ADVANCED POWER TECHNOLOGY, INC., Delaware corporation
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS

Dah Wen Tsang

Person

Patents Grantslast 30 patents

Edge termination for high voltage semiconductor device

Self-aligned power MOSFET device with recessed gate and source

High density power device fabrication process using undercut oxide...

IGBT device with platinum lifetime control and reduced gaw

High density power device fabrication process

IGBT device with platinum lifetime control having gradient or profi...

IGBT process to produce platinum lifetime control

IGBT process to produce platinum lifetime control

Topographic pattern delineated power MOSFET with profile tailored r...

Method of making topographic pattern delineated power MOSFET with p...

Patents Applicationslast 30 patents

EDGE TERMINATION FOR HIGH VOLTAGE SEMICONDUCTOR DEVICE

Self-aligned power MOSFET with enhanced base region