Daniel Bensahel

Person

38000 Gremble, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming integrated circuits on a strained semiconductor...
- Patent number 9,525,067
- Issue date Dec 20, 2016
- STMicroelectronics (Crolles 2) SAS
- Daniel-Camille Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semi-conducting substrate located on an insulat...
- Patent number 9,356,094
- Issue date May 31, 2016
- STMicroelectronics (Crolles 2) SAS
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming integrated circuits on a strained semiconductor...
- Patent number 8,906,776
- Issue date Dec 9, 2014
- STMicroelectronics (Crolles 2) SAS
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a device with a concentration gradient and th...
- Patent number 8,895,420
- Issue date Nov 25, 2014
- STMicroelectronics (Crolles 2) SAS
- Daniel-Camille Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a device with a concentration gradient and th...
- Patent number 8,575,011
- Issue date Nov 5, 2013
- STMicroelectronics S.A.
- Daniel-Camille Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semi-conducting substrate located on an insulat...
- Patent number 8,536,027
- Issue date Sep 17, 2013
- STMicroelectronics (Crolles 2) SAS
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal semiconductor layer with heteroatomic macro-network
- Patent number 8,263,965
- Issue date Sep 11, 2012
- STMicroelectronics (Crolles 2) SAS
- Yves Campidelli
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated electronic circuit including a thin film portion based o...
- Patent number 8,154,091
- Issue date Apr 10, 2012
- Centre National de la Recherche Scientifique-CNRS
- Catherine Dubourdieu
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 8,049,224
- Issue date Nov 1, 2011
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single-crystal semiconductor layer with heteroatomic macronetwork
- Patent number 7,884,352
- Issue date Feb 8, 2011
- STMicroelectronics S.A.
- Daniel Bensahel
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electronic component manufacturing method
- Patent number 7,879,679
- Issue date Feb 1, 2011
- STMicroelectronics Crolles 2 SAS
- Oliver Kermarrec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 7,803,694
- Issue date Sep 28, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 7,534,701
- Issue date May 19, 2009
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroatomic single-crystal layers
- Patent number 7,381,267
- Issue date Jun 3, 2008
- STMicroelectronics S.A.
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 7,338,883
- Issue date Mar 4, 2008
- S.O.I. Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating strained layers of silicon or of a silicon/...
- Patent number 7,279,404
- Issue date Oct 9, 2007
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device comprising a gate diel...
- Patent number 7,129,563
- Issue date Oct 31, 2006
- STMicroelectronics S.A.
- Vincent Cosnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of a single-crystal region of a III-V compound on a single-c...
- Patent number 7,033,438
- Issue date Apr 25, 2006
- STMicroelectronics S.A.
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel isolated-gate field effect transistor, process for...
- Patent number 6,989,570
- Issue date Jan 24, 2006
- STMicroelectronics S.A.
- Thomas Skotnicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a localized region of a material difficult to etch
- Patent number 6,969,661
- Issue date Nov 29, 2005
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for transferring a layer of strained semiconductor material
- Patent number 6,953,736
- Issue date Oct 11, 2005
- S.O.I.Tec Silicon on Insulator Technologies S.A.
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a device comprising layers of planes of quantum dots
- Patent number 6,690,027
- Issue date Feb 10, 2004
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming of quantum dots
- Patent number 6,596,555
- Issue date Jul 22, 2003
- STMicroelectronics S.A.
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for treating a silicon substrate, by nitriding, to form a th...
- Patent number 6,551,698
- Issue date Apr 22, 2003
- Commissariat a l'Energie Atomique
- François Martin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for obtaining a layer of single-crystal germanium on a subs...
- Patent number 6,537,370
- Issue date Mar 25, 2003
- France Telecom
- Caroline Hernandez
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining a layer of single-crystal germanium or silico...
- Patent number 6,429,098
- Issue date Aug 6, 2002
- France Telecom
- Daniel Bensahel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for fabricating a planar heterostructure
- Patent number 6,399,502
- Issue date Jun 4, 2002
- France Telecom
- Caroline Hernandez
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for nitriding the gate oxide layer of a semiconductor devic...
- Patent number 6,372,581
- Issue date Apr 16, 2002
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for restricting interdiffusion in a semiconductor device wi...
- Patent number 6,255,149
- Issue date Jul 3, 2001
- France Telecom
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for obtaining a layer of single-crystal germanium or silico...
- Patent number 6,117,750
- Issue date Sep 12, 2000
- France Telecom
- Daniel Bensahel
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR...
- Publication number 20150054141
- Publication date Feb 26, 2015
- STMicroelectronics (Crolles 2) SAS
- Daniel-Camille Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND TH...
- Publication number 20140027886
- Publication date Jan 30, 2014
- STMicroelectronics (Crolles 2) SAS
- Daniel-Camille Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULAT...
- Publication number 20130264678
- Publication date Oct 10, 2013
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR...
- Publication number 20120094470
- Publication date Apr 19, 2012
- STMicroelectronics (Crolles 2) SAS
- Daniel Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CRYSTAL SEMICONDUCTOR LAYER WITH HETEROATOMIC MACRO-NETWORK
- Publication number 20110108801
- Publication date May 12, 2011
- STMicroelectronics (Crolles 2) SAS
- Daniel Bensahel
- G02 - OPTICS
Information Patent Application
PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL
- Publication number 20100314628
- Publication date Dec 16, 2010
- S.O.I.Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED O...
- Publication number 20100059834
- Publication date Mar 11, 2010
- STMicroelectronics (Crolles) SAS
- Catherine Dubourdieu
- G11 - INFORMATION STORAGE
Information Patent Application
PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL
- Publication number 20080265261
- Publication date Oct 30, 2008
- S.O.I.Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND TH...
- Publication number 20080246121
- Publication date Oct 9, 2008
- STMicroelectronics (Crolles 2) SAS
- Daniel-Camille Bensahel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC COMPONENT MANUFACTURING METHOD
- Publication number 20080239625
- Publication date Oct 2, 2008
- STMicroelectronics CROLLES 2 SAS
- Oliver Kermarrec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL
- Publication number 20080164492
- Publication date Jul 10, 2008
- S.O.I.Tec Silicon on Insulator Technologies
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork
- Publication number 20070248818
- Publication date Oct 25, 2007
- STMicroelectronics S.A.
- Daniel Bensahel
- G02 - OPTICS
Information Patent Application
Process for transferring a layer of strained semiconductor material
- Publication number 20050255682
- Publication date Nov 17, 2005
- S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating strained layers of silicon or of a silicon/...
- Publication number 20050037599
- Publication date Feb 17, 2005
- STMicroelectronics S.A.
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a localized region of a material difficult to etch
- Publication number 20050026457
- Publication date Feb 3, 2005
- Aomar Halimaoui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device comprising a gate diel...
- Publication number 20040256699
- Publication date Dec 23, 2004
- STMicroelectronics S.A.
- Vincent Cosnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heteroatomic single-crystal layers
- Publication number 20040250752
- Publication date Dec 16, 2004
- Daniel Bensahel
- C30 - CRYSTAL GROWTH
Information Patent Application
Strained-channel isolated-gate field effect transistor, process for...
- Publication number 20040188760
- Publication date Sep 30, 2004
- Thomas Skotnicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for transferring a layer of strained semiconductor material
- Publication number 20040053477
- Publication date Mar 18, 2004
- S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A.
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Growth of a single-crystal region of a III-V compound on a single-c...
- Publication number 20040016395
- Publication date Jan 29, 2004
- Daniel Bensahel
- C30 - CRYSTAL GROWTH
Information Patent Application
Forming of quantum dots
- Publication number 20020039833
- Publication date Apr 4, 2002
- STMicroelectronics S.A.
- Daniel Bensahel
- B82 - NANO-TECHNOLOGY

Daniel Bensahel

Person

Patents Grantslast 30 patents

Method for forming integrated circuits on a strained semiconductor...

Method for making a semi-conducting substrate located on an insulat...

Method for forming integrated circuits on a strained semiconductor...

Method of fabricating a device with a concentration gradient and th...

Method of fabricating a device with a concentration gradient and th...

Method for making a semi-conducting substrate located on an insulat...

Single-crystal semiconductor layer with heteroatomic macro-network

Integrated electronic circuit including a thin film portion based o...

Process for transferring a layer of strained semiconductor material

Single-crystal semiconductor layer with heteroatomic macronetwork

Electronic component manufacturing method

Process for transferring a layer of strained semiconductor material

Process for transferring a layer of strained semiconductor material

Heteroatomic single-crystal layers

Process for transferring a layer of strained semiconductor material

Process for fabricating strained layers of silicon or of a silicon/...

Method of fabricating a semiconductor device comprising a gate diel...

Growth of a single-crystal region of a III-V compound on a single-c...

Strained-channel isolated-gate field effect transistor, process for...

Method for forming a localized region of a material difficult to etch

Process for transferring a layer of strained semiconductor material

Method for making a device comprising layers of planes of quantum dots

Forming of quantum dots

Method for treating a silicon substrate, by nitriding, to form a th...

Process for obtaining a layer of single-crystal germanium on a subs...

Process for obtaining a layer of single-crystal germanium or silico...

Process for fabricating a planar heterostructure

Process for nitriding the gate oxide layer of a semiconductor devic...

Process for restricting interdiffusion in a semiconductor device wi...

Process for obtaining a layer of single-crystal germanium or silico...

Patents Applicationslast 30 patents

METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR...

METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND TH...

METHOD FOR MAKING A SEMI-CONDUCTING SUBSTRATE LOCATED ON AN INSULAT...

METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR...

SINGLE-CRYSTAL SEMICONDUCTOR LAYER WITH HETEROATOMIC MACRO-NETWORK

PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL

INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED O...

PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL

METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND TH...

ELECTRONIC COMPONENT MANUFACTURING METHOD

PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL

Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork

Process for transferring a layer of strained semiconductor material

Process for fabricating strained layers of silicon or of a silicon/...

Method for forming a localized region of a material difficult to etch

Method of fabricating a semiconductor device comprising a gate diel...

Heteroatomic single-crystal layers

Strained-channel isolated-gate field effect transistor, process for...

Process for transferring a layer of strained semiconductor material

Growth of a single-crystal region of a III-V compound on a single-c...

Forming of quantum dots