Daniel C. Worledge

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 12,190,925
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Low RA narrow base modified double magnetic tunnel junction structure
- Patent number 12,063,868
- Issue date Aug 13, 2024
- International Business Machines Corporation
- Daniel Worledge
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory array
- Patent number 12,020,736
- Issue date Jun 25, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Grant
Double spin filter tunnel junction
- Patent number 11,569,439
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Daniel C. Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure containing an ordered ma...
- Patent number 11,557,628
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 11,527,707
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous spin diffusion layer for modified double magnetic tunnel...
- Patent number 11,501,810
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double spin filter tunnel junction
- Patent number 11,417,837
- Issue date Aug 16, 2022
- International Business Machines Corporation
- Daniel C. Worledge
- G11 - INFORMATION STORAGE
Information Patent Grant
Double spin filter tunnel junction
- Patent number 11,309,488
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Daniel C. Worledge
- G11 - INFORMATION STORAGE
Information Patent Grant
STT MRAM matertails with heavy metal insertion
- Patent number 11,302,863
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction having all-around structure
- Patent number 11,289,644
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Kotb Jabeur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure for spin-transfer torque...
- Patent number 11,264,559
- Issue date Mar 1, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin reference layer for STT MRAM
- Patent number 11,223,010
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin hall write select for magneto-resistive random access memory
- Patent number 11,164,615
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered magnetic free layer structure containing an ordered ma...
- Patent number 10,916,581
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic redundancy for memory
- Patent number 10,839,935
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Daniel Worledge
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic field sensor based on topological insulator and insulating...
- Patent number 10,734,571
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure for spin-transfer torque...
- Patent number 10,686,123
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 10,553,781
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 10,510,391
- Issue date Dec 17, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer having low switching curre...
- Patent number 10,510,390
- Issue date Dec 17, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified double magnetic tunnel junctions
- Patent number 10,468,455
- Issue date Nov 5, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer with double tunnel barrier...
- Patent number 10,453,509
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Bad bit register for memory
- Patent number 10,437,665
- Issue date Oct 8, 2019
- International Business Machines Corporation
- John K. DeBrosse
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 10,424,727
- Issue date Sep 24, 2019
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bad bit register for memory
- Patent number 10,394,647
- Issue date Aug 27, 2019
- International Business Machines Corporation
- John K. DeBrosse
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
In-situ annealing and etch back steps to improve exchange stiffness...
- Patent number 10,374,145
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin reference layer for STT MRAM
- Patent number 10,361,361
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic exchange coupled MTJ free layer with double tunnel barrier...
- Patent number 10,332,576
- Issue date Jun 25, 2019
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transfer torque cell for magnetic random access memory
- Patent number 10,326,074
- Issue date Jun 18, 2019
- International Business Machines Corporation
- Michael C. Gaidis
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MRAM WITH ASYMMETRIC STRUCTURE
- Publication number 20240365675
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE
- Publication number 20240188447
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Chanro Park
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY ARRAY
- Publication number 20230049812
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL...
- Publication number 20220301612
- Publication date Sep 22, 2022
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
LOW RA NARROW BASE MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE
- Publication number 20220302368
- Publication date Sep 22, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...
- Publication number 20220123049
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STT MRAM MATERIALS WITH HEAVY METAL INSERTION
- Publication number 20210257540
- Publication date Aug 19, 2021
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction Having All-Around Structure
- Publication number 20210193910
- Publication date Jun 24, 2021
- International Business Machines Corporation
- Kotb Jabeur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...
- Publication number 20210118949
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20200259071
- Publication date Aug 13, 2020
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC REDUNDANCY FOR MEMORY
- Publication number 20200250029
- Publication date Aug 6, 2020
- International Business Machines Corporation
- Daniel Worledge
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...
- Publication number 20200251525
- Publication date Aug 6, 2020
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...
- Publication number 20200243749
- Publication date Jul 30, 2020
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...
- Publication number 20200152699
- Publication date May 14, 2020
- International Business Machines Corporation
- Daniel Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...
- Publication number 20200083438
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMPLIFIED DOUBLE MAGNETIC TUNNEL JUNCTIONS
- Publication number 20200066791
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayered magnetic free layer structure for spin-transfer torque...
- Publication number 20200058845
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
THIN REFERENCE LAYER FOR STT MRAM
- Publication number 20190288186
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Exchange Coupled MTJ Free Layer Having Low Switching Curre...
- Publication number 20190244647
- Publication date Aug 8, 2019
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20190221738
- Publication date Jul 18, 2019
- International Business Machines Corporation
- MICHAEL C. GAIDIS
- B82 - NANO-TECHNOLOGY
Information Patent Application
Three Terminal Spin Hall MRAM
- Publication number 20190043547
- Publication date Feb 7, 2019
- International Business Machines Corporation
- John K. DeBrosse
- G11 - INFORMATION STORAGE
Information Patent Application
BAD BIT REGISTER FOR MEMORY
- Publication number 20180373588
- Publication date Dec 27, 2018
- International Business Machines Corporation
- John K. DeBrosse
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BAD BIT REGISTER FOR MEMORY
- Publication number 20180373589
- Publication date Dec 27, 2018
- International Business Machines Corporation
- John K. DeBrosse
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...
- Publication number 20180358067
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...
- Publication number 20180358065
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...
- Publication number 20180358066
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...
- Publication number 20180358068
- Publication date Dec 13, 2018
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
SECURE OFF-CHIP MRAM
- Publication number 20180330779
- Publication date Nov 15, 2018
- International Business Machines Corporation
- John K. DeBrosse
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC FIELD SENSOR BASED ON TOPOLOGICAL INSULATOR AND INSULATING...
- Publication number 20180315918
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS

Daniel C. Worledge

Person

Patents Grantslast 30 patents

Magnetic exchange coupled MTJ free layer having low switching curre...

Low RA narrow base modified double magnetic tunnel junction structure

Spin-orbit-torque magnetoresistive random-access memory array

Double spin filter tunnel junction

Multilayered magnetic free layer structure containing an ordered ma...

In-situ annealing and etch back steps to improve exchange stiffness...

Amorphous spin diffusion layer for modified double magnetic tunnel...

Double spin filter tunnel junction

Double spin filter tunnel junction

STT MRAM matertails with heavy metal insertion

Magnetic tunnel junction having all-around structure

Multilayered magnetic free layer structure for spin-transfer torque...

Thin reference layer for STT MRAM

Spin hall write select for magneto-resistive random access memory

Multilayered magnetic free layer structure containing an ordered ma...

Dynamic redundancy for memory

Magnetic field sensor based on topological insulator and insulating...

Multilayered magnetic free layer structure for spin-transfer torque...

In-situ annealing and etch back steps to improve exchange stiffness...

Magnetic exchange coupled MTJ free layer having low switching curre...

Magnetic exchange coupled MTJ free layer having low switching curre...

Simplified double magnetic tunnel junctions

Magnetic exchange coupled MTJ free layer with double tunnel barrier...

Bad bit register for memory

Spin transfer torque cell for magnetic random access memory

Bad bit register for memory

In-situ annealing and etch back steps to improve exchange stiffness...

Thin reference layer for STT MRAM

Magnetic exchange coupled MTJ free layer with double tunnel barrier...

Spin transfer torque cell for magnetic random access memory

Patents Applicationslast 30 patents

MRAM WITH ASYMMETRIC STRUCTURE

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY ARRAY

AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL...

LOW RA NARROW BASE MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...

STT MRAM MATERIALS WITH HEAVY METAL INSERTION

Magnetic Tunnel Junction Having All-Around Structure

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

DYNAMIC REDUNDANCY FOR MEMORY

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE CONTAINING AN ORDERED MA...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE FOR SPIN-TRANSFER TORQUE...

IN-SITU ANNEALING AND ETCH BACK STEPS TO IMPROVE EXCHANGE STIFFNESS...

SIMPLIFIED DOUBLE MAGNETIC TUNNEL JUNCTIONS

Multilayered magnetic free layer structure for spin-transfer torque...

THIN REFERENCE LAYER FOR STT MRAM

Magnetic Exchange Coupled MTJ Free Layer Having Low Switching Curre...

SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY

Three Terminal Spin Hall MRAM

BAD BIT REGISTER FOR MEMORY

BAD BIT REGISTER FOR MEMORY

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIER...

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...

MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER HAVING LOW SWITCHING CURRE...

SECURE OFF-CHIP MRAM

MAGNETIC FIELD SENSOR BASED ON TOPOLOGICAL INSULATOR AND INSULATING...