Daniel Calafut

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nano MOSFET with trench bottom oxide shielded and third dimensional...
- Patent number 10,192,982
- Issue date Jan 29, 2019
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with integrated schottky diode
- Patent number 10,008,579
- Issue date Jun 26, 2018
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano MOSFET with trench bottom oxide shielded and third dimensional...
- Patent number 9,748,375
- Issue date Aug 29, 2017
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual oxide trench gate power MOSFET using oxide filled trench
- Patent number 9,673,289
- Issue date Jun 6, 2017
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally on high voltage switch
- Patent number 9,530,885
- Issue date Dec 27, 2016
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and methods of making high density MOSFETs for loa...
- Patent number 9,484,453
- Issue date Nov 1, 2016
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench-based power MOSFETs with self-aligned active co...
- Patent number 9,450,088
- Issue date Sep 20, 2016
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with integrated schottky diode
- Patent number 9,412,733
- Issue date Aug 9, 2016
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 9,391,193
- Issue date Jul 12, 2016
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with termination structure for power MOSFET ap...
- Patent number 9,356,022
- Issue date May 31, 2016
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano MOSFET with trench bottom oxide shielded and third dimensional...
- Patent number 9,281,394
- Issue date Mar 8, 2016
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with integrated Schottky barrier diode
- Patent number 9,281,416
- Issue date Mar 8, 2016
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual oxide trench gate power MOSFET using oxide...
- Patent number 9,190,478
- Issue date Nov 17, 2015
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench-based power MOSFETs with self-aligned active co...
- Patent number 9,190,512
- Issue date Nov 17, 2015
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and methods of making high density MOSFETs for loa...
- Patent number 9,136,380
- Issue date Sep 15, 2015
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET package
- Patent number 9,136,370
- Issue date Sep 15, 2015
- Alpha and Omega Semiconductor Incorporated
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination trench for power MOSFET applications
- Patent number 9,105,494
- Issue date Aug 11, 2015
- Alpha and Omega Semiconductors, Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally on high voltage switch
- Patent number 9,082,790
- Issue date Jul 14, 2015
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,963,212
- Issue date Feb 24, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench-based power MOSFETs with self-aligned active co...
- Patent number 8,951,867
- Issue date Feb 10, 2015
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,932,924
- Issue date Jan 13, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistor
- Patent number 8,884,365
- Issue date Nov 11, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a schottky barrier diode integrated with a trenc...
- Patent number 8,865,540
- Issue date Oct 21, 2014
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate trench MOSFET package
- Patent number 8,829,603
- Issue date Sep 9, 2014
- Alpha and Omega Semiconductor Incorporated
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structure and methods of making high density MOSFETs for loa...
- Patent number 8,809,948
- Issue date Aug 19, 2014
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano MOSFET with trench bottom oxide shielded and third dimensional...
- Patent number 8,785,278
- Issue date Jul 22, 2014
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with gated and non-gated trenches
- Patent number 8,742,401
- Issue date Jun 3, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and schottky diode structures
- Patent number 8,680,611
- Issue date Mar 25, 2014
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with integrated Schottky barrier diode
- Patent number 8,610,235
- Issue date Dec 17, 2013
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with source, heavy body region and shielded...
- Patent number 8,592,895
- Issue date Nov 26, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...
- Publication number 20170373185
- Publication date Dec 28, 2017
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20160300924
- Publication date Oct 13, 2016
- Alpha and Omega Semiconductor Incorporated
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...
- Publication number 20160190309
- Publication date Jun 30, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL OXIDE TRENCH GATE POWER MOSFET USING OXIDE FILLED TRENCH
- Publication number 20160099325
- Publication date Apr 7, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CO...
- Publication number 20160064551
- Publication date Mar 3, 2016
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE AND METHODS OF MAKING HIGH DENSITY MOSFETS FOR LOA...
- Publication number 20150380544
- Publication date Dec 31, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TERMINATION STRUCTURE FOR POWER MOSFET AP...
- Publication number 20150333174
- Publication date Nov 19, 2015
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY ON HIGH VOLTAGE SWITCH
- Publication number 20150279989
- Publication date Oct 1, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20150194521
- Publication date Jul 9, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL OXIDE TRENCH GATE POWER MOSFET USING OXIDE FILLED TRENCH
- Publication number 20150179750
- Publication date Jun 25, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CO...
- Publication number 20150145037
- Publication date May 28, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY ON HIGH VOLTAGE SWITCH
- Publication number 20150021682
- Publication date Jan 22, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH INTEGRATED SCHOTTKY BARRIER DIODE
- Publication number 20150001616
- Publication date Jan 1, 2015
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20140374824
- Publication date Dec 25, 2014
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURE AND METHODS OF MAKING HIGH DENSITY MOSFETS FOR LOA...
- Publication number 20140339630
- Publication date Nov 20, 2014
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...
- Publication number 20140319605
- Publication date Oct 30, 2014
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET PACKAGE
- Publication number 20140264571
- Publication date Sep 18, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION TRENCH FOR POWER MOSFET APPLICATIONS
- Publication number 20140239388
- Publication date Aug 28, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
- Publication number 20140203355
- Publication date Jul 24, 2014
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CO...
- Publication number 20140175536
- Publication date Jun 26, 2014
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SCHOTTKY BARRIER DIODE INTEGRATED WITH A TRENC...
- Publication number 20140073098
- Publication date Mar 13, 2014
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH GATED AND NON-GATED TRENCHES
- Publication number 20140054691
- Publication date Feb 27, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20140042536
- Publication date Feb 13, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20140042532
- Publication date Feb 13, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20130248991
- Publication date Sep 26, 2013
- Fairchild Semiconductor Corporation
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...
- Publication number 20130200451
- Publication date Aug 8, 2013
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND HEAVY BODY REG...
- Publication number 20130181282
- Publication date Jul 18, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET with Integrated Schottky Barrier Diode
- Publication number 20130075808
- Publication date Mar 28, 2013
- Alpha and Omega Semiconductor Inc.
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFET PACKAGE
- Publication number 20130043527
- Publication date Feb 21, 2013
- SIK LUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
- Publication number 20120319197
- Publication date Dec 20, 2012
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS

Daniel Calafut

Person

Patents Grantslast 30 patents

Nano MOSFET with trench bottom oxide shielded and third dimensional...

MOSFET with integrated schottky diode

Nano MOSFET with trench bottom oxide shielded and third dimensional...

Dual oxide trench gate power MOSFET using oxide filled trench

Normally on high voltage switch

Device structure and methods of making high density MOSFETs for loa...

High density trench-based power MOSFETs with self-aligned active co...

MOSFET with integrated schottky diode

Trench-based power semiconductor devices with increased breakdown v...

Semiconductor device with termination structure for power MOSFET ap...

Nano MOSFET with trench bottom oxide shielded and third dimensional...

Trench MOSFET with integrated Schottky barrier diode

Method for forming dual oxide trench gate power MOSFET using oxide...

High density trench-based power MOSFETs with self-aligned active co...

Device structure and methods of making high density MOSFETs for loa...

Shielded gate trench MOSFET package

Termination trench for power MOSFET applications

Normally on high voltage switch

Trench-based power semiconductor devices with increased breakdown v...

High density trench-based power MOSFETs with self-aligned active co...

Trench-based power semiconductor devices with increased breakdown v...

Trench-gate field effect transistor

Method for forming a schottky barrier diode integrated with a trenc...

Shielded gate trench MOSFET package

Device structure and methods of making high density MOSFETs for loa...

Nano MOSFET with trench bottom oxide shielded and third dimensional...

Field effect transistor with gated and non-gated trenches

Field effect transistor and schottky diode structures

Trench MOSFET with integrated Schottky barrier diode

Field effect transistor with source, heavy body region and shielded...

Patents Applicationslast 30 patents

NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...

MOSFET WITH INTEGRATED SCHOTTKY DIODE

NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...

DUAL OXIDE TRENCH GATE POWER MOSFET USING OXIDE FILLED TRENCH

HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CO...

DEVICE STRUCTURE AND METHODS OF MAKING HIGH DENSITY MOSFETS FOR LOA...

SEMICONDUCTOR DEVICE WITH TERMINATION STRUCTURE FOR POWER MOSFET AP...

NORMALLY ON HIGH VOLTAGE SWITCH

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

DUAL OXIDE TRENCH GATE POWER MOSFET USING OXIDE FILLED TRENCH

HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CO...

NORMALLY ON HIGH VOLTAGE SWITCH

TRENCH MOSFET WITH INTEGRATED SCHOTTKY BARRIER DIODE

MOSFET WITH INTEGRATED SCHOTTKY DIODE

DEVICE STRUCTURE AND METHODS OF MAKING HIGH DENSITY MOSFETS FOR LOA...

NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...

SHIELDED GATE TRENCH MOSFET PACKAGE

TERMINATION TRENCH FOR POWER MOSFET APPLICATIONS

FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CO...

METHOD FOR FORMING A SCHOTTKY BARRIER DIODE INTEGRATED WITH A TRENC...

FIELD EFFECT TRANSISTOR WITH GATED AND NON-GATED TRENCHES

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR

NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL...

FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND HEAVY BODY REG...

Trench MOSFET with Integrated Schottky Barrier Diode

SHIELDED GATE TRENCH MOSFET PACKAGE

FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES