Daniel J. Blomberg

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,217,860
- Issue date Feb 26, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,186,612
- Issue date Jan 22, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation structures and systems and methods including...
- Patent number 9,917,150
- Issue date Mar 13, 2018
- NXP USA, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device fabrication methods
- Patent number 9,893,164
- Issue date Feb 13, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 9,728,600
- Issue date Aug 8, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-adjusted isolation bias in semiconductor devices
- Patent number 9,680,011
- Issue date Jun 13, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with multiple junctions
- Patent number 9,647,082
- Issue date May 9, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliability in mergeable semiconductor devices
- Patent number 9,640,635
- Issue date May 2, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation
- Patent number 9,601,564
- Issue date Mar 21, 2017
- NXP USA, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage LDMOS device
- Patent number 9,601,595
- Issue date Mar 21, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related fabrication methods
- Patent number 9,590,097
- Issue date Mar 7, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation structures and systems and methods including...
- Patent number 9,570,548
- Issue date Feb 14, 2017
- NXP USA, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with multiple junctions
- Patent number 9,543,454
- Issue date Jan 10, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resurf high voltage diode
- Patent number 9,496,333
- Issue date Nov 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing bipolar transistors with improved stability
- Patent number 9,466,687
- Issue date Oct 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation
- Patent number 9,343,526
- Issue date May 17, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related fabrication methods
- Patent number 9,306,060
- Issue date Apr 5, 2016
- Freescale Semiconductor Inc.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage LDMOS device
- Patent number 9,231,083
- Issue date Jan 5, 2016
- FREESCAL SEMICONDUCTOR INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating improved bipolar transistors
- Patent number 9,202,887
- Issue date Dec 1, 2015
- Freescale Semiconductor Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related fabrication methods
- Patent number 9,184,257
- Issue date Nov 10, 2015
- Freescale Semiconductor Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation structures and systems and methods including...
- Patent number 9,136,327
- Issue date Sep 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain-end drift diminution in semiconductor devices
- Patent number 9,136,323
- Issue date Sep 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with buried conduction path
- Patent number 9,130,006
- Issue date Sep 8, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mergeable semiconductor device with improved reliability
- Patent number 9,117,841
- Issue date Aug 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with high breakdown voltage
- Patent number 9,099,489
- Issue date Aug 4, 2015
- Freescale Semiconductor Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resurf high voltage diode
- Patent number 9,059,008
- Issue date Jun 16, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diagonal conduction path
- Patent number 9,054,149
- Issue date Jun 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related fabrication methods
- Patent number 8,946,860
- Issue date Feb 3, 2015
- Freescale Semiconductor Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming bipolar transistors
- Patent number 8,946,862
- Issue date Feb 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming high gain tunable bipolar transistors
- Patent number 8,946,041
- Issue date Feb 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES
- Publication number 20170125584
- Publication date May 4, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION STRUCTURES AND SYSTEMS AND METHODS INCLUDING...
- Publication number 20170110537
- Publication date Apr 20, 2017
- NXP USA, Inc.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH MULTIPLE JUNCTIONS
- Publication number 20170084715
- Publication date Mar 23, 2017
- NXP USA, Inc.
- XIN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077295
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077219
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION
- Publication number 20160233296
- Publication date Aug 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- XU CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS
- Publication number 20160181421
- Publication date Jun 23, 2016
- Freescale Semiconductor Inc.
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BREAKDOWN VOLTAGE LDMOS DEVICE
- Publication number 20160099341
- Publication date Apr 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION STRUCTURES AND SYSTEMS AND METHODS INCLUDING...
- Publication number 20160056234
- Publication date Feb 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR DEVICE FABRICATION METHODS
- Publication number 20150380513
- Publication date Dec 31, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES
- Publication number 20150364576
- Publication date Dec 17, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resurf High Voltage Diode
- Publication number 20150155350
- Publication date Jun 4, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20150104920
- Publication date Apr 16, 2015
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mergeable Semiconductor Device with Improved Reliability
- Publication number 20150097238
- Publication date Apr 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Buried Conduction Path
- Publication number 20150097265
- Publication date Apr 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES
- Publication number 20150004768
- Publication date Jan 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING IMPROVED BIPOLAR TRANSISTORS
- Publication number 20140363945
- Publication date Dec 11, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION
- Publication number 20140264724
- Publication date Sep 18, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xu Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20140231961
- Publication date Aug 21, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING BIPOLAR TRANSISTORS
- Publication number 20140187014
- Publication date Jul 3, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING BIPOLAR TRANSISTORS WITH IMPROVED STABILITY
- Publication number 20140134820
- Publication date May 15, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resurf High Voltage Diode
- Publication number 20140110814
- Publication date Apr 24, 2014
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diagonal Conduction Path
- Publication number 20140061858
- Publication date Mar 6, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH HIGH BREAKDOWN VOLTAGE
- Publication number 20140015090
- Publication date Jan 16, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BREAKDOWN VOLTAGE LDMOS DEVICE
- Publication number 20140001545
- Publication date Jan 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drain-End Drift Diminution
- Publication number 20130292764
- Publication date Nov 7, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING BIPOLAR TRANSISTORS WITH IMPROVED GAIN
- Publication number 20130149831
- Publication date Jun 13, 2013
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HIGH GAIN TUNABLE BIPOLAR TRANSISTORS
- Publication number 20120264270
- Publication date Oct 18, 2012
- FREESCALE SEMICONDUCTOR, INC.
- XIN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH IMPROVED GAIN
- Publication number 20120187538
- Publication date Jul 26, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH IMPROVED STABILITY
- Publication number 20120098095
- Publication date Apr 26, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS

Daniel J. Blomberg

Person

Patents Grantslast 30 patents

Partially biased isolation in semiconductor devices

Partially biased isolation in semiconductor devices

Deep trench isolation structures and systems and methods including...

Bipolar transistor device fabrication methods

Partially biased isolation in semiconductor devices

Self-adjusted isolation bias in semiconductor devices

Diodes with multiple junctions

Reliability in mergeable semiconductor devices

Deep trench isolation

High breakdown voltage LDMOS device

Semiconductor devices and related fabrication methods

Deep trench isolation structures and systems and methods including...

Diodes with multiple junctions

Resurf high voltage diode

Methods for producing bipolar transistors with improved stability

Deep trench isolation

Semiconductor devices and related fabrication methods

High breakdown voltage LDMOS device

Methods for fabricating improved bipolar transistors

Semiconductor device and related fabrication methods

Deep trench isolation structures and systems and methods including...

Drain-end drift diminution in semiconductor devices

Semiconductor device with buried conduction path

Mergeable semiconductor device with improved reliability

Bipolar transistor with high breakdown voltage

Resurf high voltage diode

Semiconductor device with diagonal conduction path

Semiconductor device and related fabrication methods

Methods for forming bipolar transistors

Methods for forming high gain tunable bipolar transistors

Patents Applicationslast 30 patents

SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES

DEEP TRENCH ISOLATION STRUCTURES AND SYSTEMS AND METHODS INCLUDING...

DIODES WITH MULTIPLE JUNCTIONS

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

DEEP TRENCH ISOLATION

SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

HIGH BREAKDOWN VOLTAGE LDMOS DEVICE

DEEP TRENCH ISOLATION STRUCTURES AND SYSTEMS AND METHODS INCLUDING...

BIPOLAR TRANSISTOR DEVICE FABRICATION METHODS

RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES

Resurf High Voltage Diode

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

Mergeable Semiconductor Device with Improved Reliability

Semiconductor Device with Buried Conduction Path

DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES

METHODS FOR FABRICATING IMPROVED BIPOLAR TRANSISTORS

DEEP TRENCH ISOLATION

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

METHODS FOR FORMING BIPOLAR TRANSISTORS

METHODS FOR PRODUCING BIPOLAR TRANSISTORS WITH IMPROVED STABILITY

Resurf High Voltage Diode

Semiconductor Device with Diagonal Conduction Path

BIPOLAR TRANSISTOR WITH HIGH BREAKDOWN VOLTAGE

HIGH BREAKDOWN VOLTAGE LDMOS DEVICE

Semiconductor Device with Drain-End Drift Diminution

METHODS FOR FABRICATING BIPOLAR TRANSISTORS WITH IMPROVED GAIN

METHODS FOR FORMING HIGH GAIN TUNABLE BIPOLAR TRANSISTORS

BIPOLAR TRANSISTOR WITH IMPROVED GAIN

BIPOLAR TRANSISTOR WITH IMPROVED STABILITY