Daniel Kueck

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with transistor cells and a drift structure an...
- Patent number 10,700,182
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SiC semiconductor device with offset in trench bottom
- Patent number 10,553,685
- Issue date Feb 4, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming compound semiconductor body
- Patent number 10,332,876
- Issue date Jun 25, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 10,217,636
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region and trench gate structure
- Patent number 10,211,306
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,056,365
- Issue date Aug 21, 2018
- Infineon Technologies Austria AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,960,230
- Issue date May 1, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 9,934,972
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,923,053
- Issue date Mar 20, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor device
- Patent number 9,923,066
- Issue date Mar 20, 2018
- Infineon Technologies AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,577,073
- Issue date Feb 21, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,543,414
- Issue date Jan 10, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, junction field effect transistor and vertical...
- Patent number 9,029,974
- Issue date May 12, 2015
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,994,078
- Issue date Mar 31, 2015
- Infineon Technologies Austria AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...
- Publication number 20200006544
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Compound Semiconductor Body
- Publication number 20190081039
- Publication date Mar 14, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and a Drift Structure an...
- Publication number 20180331204
- Publication date Nov 15, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SiC Semiconductor Device with Offset in Trench Bottom
- Publication number 20180308938
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor Device with a Variable Gate Dielectric Thickness
- Publication number 20180248000
- Publication date Aug 30, 2018
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20180204725
- Publication date Jul 19, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diode Region and Trench Gate Structure
- Publication number 20180158920
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide-Bandgap Semiconductor Device with Trench Gate Structures
- Publication number 20170345905
- Publication date Nov 30, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-Carbide Transistor Device with a Shielded Gate
- Publication number 20170117352
- Publication date Apr 27, 2017
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20170103894
- Publication date Apr 13, 2017
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP SEMICONDUCTOR DEVICE
- Publication number 20170040425
- Publication date Feb 9, 2017
- INFINEON TECHNOLOGIES AG
- Daniel KUECK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Protecting a Surface of a Substrate and Semiconductor De...
- Publication number 20170032964
- Publication date Feb 2, 2017
- INFINEON TECHNOLOGIES AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SILICON-CARBIDE DEVICE WITH A SHIELDED GATE
- Publication number 20160172468
- Publication date Jun 16, 2016
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150171078
- Publication date Jun 18, 2015
- Infineon Technologies Austria AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL...
- Publication number 20150069411
- Publication date Mar 12, 2015
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20140001558
- Publication date Jan 2, 2014
- Infineon Technologies Austria AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS

Daniel Kueck

Person

Patents Grantslast 30 patents

Semiconductor device with transistor cells and a drift structure an...

SiC semiconductor device with offset in trench bottom

Method of forming compound semiconductor body

Method of manufacturing a silicon carbide semiconductor device by r...

Semiconductor device with diode region and trench gate structure

Semiconductor device

Silicon-carbide transistor device with a shielded gate

Method of manufacturing a silicon carbide semiconductor device by r...

Silicon-carbide transistor device with a shielded gate

Wide bandgap semiconductor device

Method of forming a silicon-carbide device with a shielded gate

Method of forming a silicon-carbide device with a shielded gate

Semiconductor device, junction field effect transistor and vertical...

Semiconductor device

Patents Applicationslast 30 patents

Silicon Carbide Semiconductor Component

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...

Silicon Carbide Semiconductor Component

Method of Forming Compound Semiconductor Body

Semiconductor Device with Transistor Cells and a Drift Structure an...

SiC Semiconductor Device with Offset in Trench Bottom

Vertical Transistor Device with a Variable Gate Dielectric Thickness

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...

Semiconductor Device with Diode Region and Trench Gate Structure

Wide-Bandgap Semiconductor Device with Trench Gate Structures

Silicon-Carbide Transistor Device with a Shielded Gate

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...

WIDE BANDGAP SEMICONDUCTOR DEVICE

Method for Protecting a Surface of a Substrate and Semiconductor De...

METHOD OF FORMING A SILICON-CARBIDE DEVICE WITH A SHIELDED GATE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL...

Semiconductor Device