Daniel Le

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Santa Clara, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Atomic layer etching of silicon nitride
- Patent number 10,079,154
- Issue date Sep 18, 2018
- Lam Research Corporation
- Daniel Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen activated atomic layer etching
- Patent number 9,779,956
- Issue date Oct 3, 2017
- Lam Research Corporation
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for low-K dielectric etch with reduced damage
- Patent number 8,236,188
- Issue date Aug 7, 2012
- Lam Research Corporation
- Bing Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line edge roughness reduction for trench etch
- Patent number 6,949,460
- Issue date Sep 27, 2005
- Lam Research Corporation
- Eric Wagganer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ATOMIC LAYER ETCHING OF SILICON NITRIDE
- Publication number 20180269071
- Publication date Sep 20, 2018
- LAM RESEARCH CORPORATION
- Daniel LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE
- Publication number 20100261352
- Publication date Oct 14, 2010
- LAM RESEARCH CORPORATION
- Bing Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Line edge roughness reduction for trench etch
- Publication number 20050277289
- Publication date Dec 15, 2005
- Eric Wagganer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Line edge roughness reduction for trench etch
- Publication number 20050101126
- Publication date May 12, 2005
- Lam Research Corporation
- Eric Wagganer
- H01 - BASIC ELECTRIC ELEMENTS