Daniel Schloegl

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor diode including field stop region
- Patent number 11,569,392
- Issue date Jan 31, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a power semiconductor device having a redu...
- Patent number 10,727,311
- Issue date Jul 28, 2020
- Infineon Technologies AG
- Gerhard Schmidt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for processing a semiconductor device and semiconductor device
- Patent number 10,665,687
- Issue date May 26, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a power semiconductor device
- Patent number 10,529,809
- Issue date Jan 7, 2020
- Infineon Technologies AG
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having an undulated...
- Patent number 10,497,801
- Issue date Dec 3, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices by using epitaxy and...
- Patent number 10,276,656
- Issue date Apr 30, 2019
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Producing a semiconductor device by epitaxial growth
- Patent number 10,243,066
- Issue date Mar 26, 2019
- Infineon Technologies Austria AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including undulated profile of net doping in a...
- Patent number 10,211,325
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,186,587
- Issue date Jan 22, 2019
- Infineon Technologies AG
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor to metal transition for semiconductor devices
- Patent number 9,685,504
- Issue date Jun 20, 2017
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a semiconductor device and semiconductor device
- Patent number 9,653,296
- Issue date May 16, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Producing a semiconductor device by epitaxial growth
- Patent number 9,647,083
- Issue date May 9, 2017
- Infineon Technologies Austria AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor to metal transition
- Patent number 9,443,971
- Issue date Sep 13, 2016
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and method of manufacturing a semiconductor diode
- Patent number 9,385,181
- Issue date Jul 5, 2016
- Infineon Technologies AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for manufacturing a semiconductor...
- Patent number 9,337,186
- Issue date May 10, 2016
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for manufacturing a semiconductor...
- Patent number 8,884,378
- Issue date Nov 11, 2014
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including a dielectr...
- Patent number 8,748,317
- Issue date Jun 10, 2014
- Infineon Technologies Austria AG
- Gerhard Schmidt
- B24 - GRINDING POLISHING

Patents Applicationslast 30 patents

Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406600
- Publication date Dec 22, 2022
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406947
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Benedikt Stoib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Diode Including Field Stop Region
- Publication number 20220085215
- Publication date Mar 17, 2022
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210320174
- Publication date Oct 14, 2021
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having an Undulated...
- Publication number 20190157435
- Publication date May 23, 2019
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Power Semiconductor Device
- Publication number 20190157401
- Publication date May 23, 2019
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Power Semiconductor Device Having a Redu...
- Publication number 20190035909
- Publication date Jan 31, 2019
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Semiconductor Devices by Using Epitaxy and...
- Publication number 20180226471
- Publication date Aug 9, 2018
- INFINEON TECHNOLOGIES AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20170373157
- Publication date Dec 28, 2017
- INFINEON TECHNOLOGIES AG
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Producing a Semiconductor Device by Epitaxial Growth
- Publication number 20170243963
- Publication date Aug 24, 2017
- INFINEON TECHNOLOGIES AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20170194450
- Publication date Jul 6, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor to Metal Transition for Semiconductor Devices
- Publication number 20160372539
- Publication date Dec 22, 2016
- INFINEON TECHNOLOGIES AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Producing a Semiconductor Device by Epitaxial Growth
- Publication number 20160322472
- Publication date Nov 3, 2016
- INFINEON TECHNOLOGIES AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor to Metal Transition
- Publication number 20160141406
- Publication date May 19, 2016
- INFINEON TECHNOLOGIES AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20150340234
- Publication date Nov 26, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Undulated Profile of Net Doping in a...
- Publication number 20150214347
- Publication date Jul 30, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
- Publication number 20150206983
- Publication date Jul 23, 2015
- INFINEON TECHNOLOGIES AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Method for Manufacturing a Semiconductor...
- Publication number 20150014815
- Publication date Jan 15, 2015
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device including a Dielectr...
- Publication number 20140038413
- Publication date Feb 6, 2014
- Infineon Technologies Austria AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Method for Manufacturing a Semiconductor...
- Publication number 20120104537
- Publication date May 3, 2012
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS

Daniel Schloegl

Person

Patents Grantslast 30 patents

Vertical power semiconductor device including a field stop region h...

Power semiconductor diode including field stop region

Method for manufacturing a power semiconductor device having a redu...

Method for processing a semiconductor device and semiconductor device

Method of manufacturing a power semiconductor device

Method of manufacturing a semiconductor device having an undulated...

Method of manufacturing semiconductor devices by using epitaxy and...

Producing a semiconductor device by epitaxial growth

Semiconductor device including undulated profile of net doping in a...

Power semiconductor device

Semiconductor to metal transition for semiconductor devices

Method for processing a semiconductor device and semiconductor device

Producing a semiconductor device by epitaxial growth

Semiconductor to metal transition

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor device and a method for manufacturing a semiconductor...

Semiconductor device and a method for manufacturing a semiconductor...

Method of manufacturing a semiconductor device including a dielectr...

Patents Applicationslast 30 patents

Vertical Power Semiconductor Device and Manufacturing Method

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

Power Semiconductor Diode Including Field Stop Region

VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Method of Manufacturing a Semiconductor Device Having an Undulated...

Method of Manufacturing a Power Semiconductor Device

Method for Manufacturing a Power Semiconductor Device Having a Redu...

Method of Manufacturing Semiconductor Devices by Using Epitaxy and...

Power Semiconductor Device

Producing a Semiconductor Device by Epitaxial Growth

METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor to Metal Transition for Semiconductor Devices

Producing a Semiconductor Device by Epitaxial Growth

Semiconductor to Metal Transition

METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor Device Including Undulated Profile of Net Doping in a...

Semiconductor Diode and Method of Manufacturing a Semiconductor Diode

Semiconductor Device and a Method for Manufacturing a Semiconductor...

Method of Manufacturing a Semiconductor Device including a Dielectr...

Semiconductor Device and a Method for Manufacturing a Semiconductor...