Daping Fu

Person

Chengdu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral DMOS with integrated Schottky diode
- Patent number 11,749,751
- Issue date Sep 5, 2023
- Chengdu Monolithic Power Systems Co., Ltd.
- Tao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral schottky diode with high breakdown voltage capability
- Patent number 11,081,597
- Issue date Aug 3, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with sinker link
- Patent number 11,049,957
- Issue date Jun 29, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction semiconductor device and method for manufacturing...
- Patent number 10,090,200
- Issue date Oct 2, 2018
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistors and associated fabrication methods
- Patent number 9,230,956
- Issue date Jan 5, 2016
- Chengdu Monolithic Power Systems, Inc.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High side DMOS and the method for forming thereof
- Patent number 9,159,795
- Issue date Oct 13, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MAN...
- Publication number 20230261116
- Publication date Aug 17, 2023
- Chengdu Monolithic Power Systems Co., Ltd.
- Daping Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...
- Publication number 20210193805
- Publication date Jun 24, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DMOS WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20210159330
- Publication date May 27, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Tao Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SCHOTTKY DIODE WITH HIGH BREAKDOWN VOLTAGE CAPABILITY
- Publication number 20200185542
- Publication date Jun 11, 2020
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20170186648
- Publication date Jun 29, 2017
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20170170312
- Publication date Jun 15, 2017
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20150001619
- Publication date Jan 1, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTORS AND ASSOCIATED FABRICATION METHODS
- Publication number 20140117415
- Publication date May 1, 2014
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20140117416
- Publication date May 1, 2014
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Lateral DMOS with integrated Schottky diode

Lateral schottky diode with high breakdown voltage capability

LDMOS device with sinker link

Bipolar junction semiconductor device and method for manufacturing...

Junction field effect transistors and associated fabrication methods

High side DMOS and the method for forming thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MAN...

LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...

LATERAL DMOS WITH INTEGRATED SCHOTTKY DIODE

LATERAL SCHOTTKY DIODE WITH HIGH BREAKDOWN VOLTAGE CAPABILITY

BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF

HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF

JUNCTION FIELD EFFECT TRANSISTORS AND ASSOCIATED FABRICATION METHODS

SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING