Darsen D. Lu

Person

Mount Kisco, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 11,728,428
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 10,892,364
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 10,886,385
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 10,734,477
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed decoupling capacitor
- Patent number 10,593,663
- Issue date Mar 17, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 10,546,955
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 10,347,752
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed decoupling capacitor
- Patent number 10,262,991
- Issue date Apr 16, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 10,243,042
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 10,177,223
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 10,056,474
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for compressively strained silicon germanium f...
- Patent number 9,997,540
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain release in pFET regions
- Patent number 9,966,387
- Issue date May 8, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 9,954,083
- Issue date Apr 24, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 9,917,188
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET PCM access transistor having gate-wrapped source and drain r...
- Patent number 9,825,093
- Issue date Nov 21, 2017
- GLOBALFOUNDRIES Inc.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET PCM access transistor having gate-wrapped source and drain r...
- Patent number 9,825,094
- Issue date Nov 21, 2017
- GLOBALFOUNDRIES Inc.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 9,786,737
- Issue date Oct 10, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain release in PFET regions
- Patent number 9,761,610
- Issue date Sep 12, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to make strained FinFET with improved junction...
- Patent number 9,653,541
- Issue date May 16, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for advanced bulk fin isolation
- Patent number 9,583,492
- Issue date Feb 28, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric finFET memory access transistor
- Patent number 9,583,624
- Issue date Feb 28, 2017
- International Business Machines Corporation
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for advanced bulk fin isolation
- Patent number 9,564,439
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric finFET memory access transistor
- Patent number 9,553,173
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 9,548,213
- Issue date Jan 17, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for compressively strained silicon germanium f...
- Patent number 9,548,386
- Issue date Jan 17, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain release in PFET regions
- Patent number 9,543,323
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor having graded SiGe base
- Patent number 9,525,027
- Issue date Dec 20, 2016
- GLOBALFOUNDRIES Inc.
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation tolerant device structure
- Patent number 9,515,171
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed decoupling capacitor
- Patent number 9,455,250
- Issue date Sep 27, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20200083374
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...
- Publication number 20190237561
- Publication date Aug 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20190165095
- Publication date May 30, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...
- Publication number 20180130894
- Publication date May 10, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20180122944
- Publication date May 3, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20170365659
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20170365658
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20170162650
- Publication date Jun 8, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR COMPRESSIVELY STRAINED SILICON GERMANIUM F...
- Publication number 20170125447
- Publication date May 4, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...
- Publication number 20170053966
- Publication date Feb 23, 2017
- GLOBALFOUNDRIES INC.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...
- Publication number 20170053994
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...
- Publication number 20170054005
- Publication date Feb 23, 2017
- GLOBAL FOUNDRIES Inc.
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...
- Publication number 20170053839
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELEASE IN PFET REGIONS
- Publication number 20170053943
- Publication date Feb 23, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20170040452
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED DECOUPLING CAPACITOR
- Publication number 20170005088
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED DECOUPLING CAPACITOR
- Publication number 20170005087
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELEASE IN PFET REGIONS
- Publication number 20160359003
- Publication date Dec 8, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20160233315
- Publication date Aug 11, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELEASE IN PFET REGIONS
- Publication number 20160204131
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADVANCED BULK FIN ISOLATION
- Publication number 20160197078
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADVANCED BULK FIN ISOLATION
- Publication number 20160197077
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION...
- Publication number 20160133697
- Publication date May 12, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADVANCED BULK FIN ISOLATION
- Publication number 20160086858
- Publication date Mar 24, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-FET WITH GRADED SILICON-GERMANIUM CHANNEL
- Publication number 20150270344
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING GRADED SiGe BASE
- Publication number 20150263091
- Publication date Sep 17, 2015
- International Business Machines Corporation
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION...
- Publication number 20150255606
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20150243755
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...
- Publication number 20140264591
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS

Darsen D. Lu

Person

Patents Grantslast 30 patents

Dielectric isolated fin with improved fin profile

Dielectric isolated fin with improved fin profile

Semiconductor structures having increased channel strain using fin...

FinFET with reduced parasitic capacitance

Distributed decoupling capacitor

Dielectric isolated fin with improved fin profile

Semiconductor structures having increased channel strain using fin...

Distributed decoupling capacitor

FinFET with reduced parasitic capacitance

FinFET with reduced parasitic capacitance

Semiconductor structures having increased channel strain using fin...

Structure and method for compressively strained silicon germanium f...

Strain release in pFET regions

Semiconductor structures having increased channel strain using fin...

Dielectric isolated fin with improved fin profile

FinFET PCM access transistor having gate-wrapped source and drain r...

FinFET PCM access transistor having gate-wrapped source and drain r...

FinFET with reduced parasitic capacitance

Strain release in PFET regions

Structure and method to make strained FinFET with improved junction...

Structure and method for advanced bulk fin isolation

Asymmetric finFET memory access transistor

Structure and method for advanced bulk fin isolation

Asymmetric finFET memory access transistor

Dielectric isolated fin with improved fin profile

Structure and method for compressively strained silicon germanium f...

Strain release in PFET regions

Lateral bipolar junction transistor having graded SiGe base

Radiation tolerant device structure

Distributed decoupling capacitor

Patents Applicationslast 30 patents

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...

FINFET WITH REDUCED PARASITIC CAPACITANCE

SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

FINFET WITH REDUCED PARASITIC CAPACITANCE

FINFET WITH REDUCED PARASITIC CAPACITANCE

FINFET WITH REDUCED PARASITIC CAPACITANCE

STRUCTURE AND METHOD FOR COMPRESSIVELY STRAINED SILICON GERMANIUM F...

FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...

SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...

FINFET PCM ACCESS TRANSISTOR HAVING GATE-WRAPPED SOURCE AND DRAIN R...

SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...

STRAIN RELEASE IN PFET REGIONS

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

DISTRIBUTED DECOUPLING CAPACITOR

DISTRIBUTED DECOUPLING CAPACITOR

STRAIN RELEASE IN PFET REGIONS

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

STRAIN RELEASE IN PFET REGIONS

STRUCTURE AND METHOD FOR ADVANCED BULK FIN ISOLATION

STRUCTURE AND METHOD FOR ADVANCED BULK FIN ISOLATION

STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION...

STRUCTURE AND METHOD FOR ADVANCED BULK FIN ISOLATION

P-FET WITH GRADED SILICON-GERMANIUM CHANNEL

LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING GRADED SiGe BASE

STRUCTURE AND METHOD TO MAKE STRAINED FINFET WITH IMPROVED JUNCTION...

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...