Dave Chapek

Person

Merrimack, NH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including a layer of polycrystalline silicon...
- Patent number 8,288,832
- Issue date Oct 16, 2012
- Micron Technology, Inc.
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned isolation structure utilizing sid...
- Patent number 8,173,517
- Issue date May 8, 2012
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned T-shaped isolation trench
- Patent number 7,749,860
- Issue date Jul 6, 2010
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for stabilizing high pressure oxidation of a semiconductor d...
- Patent number 7,410,911
- Issue date Aug 12, 2008
- Micron Technology, Inc.
- Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stabilizing high pressure oxidation of a semiconducto...
- Patent number 7,282,457
- Issue date Oct 16, 2007
- Micron Technology, Inc.
- Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stabilizing high pressure oxidation of a semiconducto...
- Patent number 7,279,435
- Issue date Oct 9, 2007
- Micron Technology, Inc.
- Daniel F Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for semiconductor devices
- Patent number 7,235,856
- Issue date Jun 26, 2007
- Micron Technology, Inc.
- John T. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for stabilizing high pressure oxidation of a semiconductor d...
- Patent number 6,955,996
- Issue date Oct 18, 2005
- Micron Technology, Inc.
- Daniel F Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit formed by removing undesirable second oxide whil...
- Patent number 6,891,245
- Issue date May 10, 2005
- Micron Technology, Inc.
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for stabilizing high pressure oxidation of a semiconducto...
- Patent number 6,827,790
- Issue date Dec 7, 2004
- Micron Technology, Inc.
- Daniel Gealy
Information Patent Grant
System for performing thermal reflow operations under high gravity...
- Patent number 6,747,249
- Issue date Jun 8, 2004
- Micron Technology, Inc.
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Method for stabilizing high pressure oxidation of a semiconductor d...
- Patent number 6,596,651
- Issue date Jul 22, 2003
- Micron Technology, Inc.
- F. Daniel Gealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems for performing thermal reflow operations under high gravity...
- Patent number 6,573,478
- Issue date Jun 3, 2003
- Micron Technology, Inc.
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Method and apparatus for stabilizing high pressure oxidation of a s...
- Patent number 6,423,649
- Issue date Jul 23, 2002
- Micron Technology, Inc.
- Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for performing thermal reflow operations under...
- Patent number 6,414,275
- Issue date Jul 2, 2002
- Micron Technology, Inc.
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Semiconductor processing methods, methods of forming silicon dioxid...
- Patent number 6,323,101
- Issue date Nov 27, 2001
- Micron Technology, Inc.
- Weimin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for stabilizing high pressure oxidation of a s...
- Patent number 6,291,364
- Issue date Sep 18, 2001
- Micron Technology, Inc.
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for performing thermal reflow operations under...
- Patent number 6,288,367
- Issue date Sep 11, 2001
- Micron Technology, Inc.
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Method for forming oxide using high pressure
- Patent number 6,271,152
- Issue date Aug 7, 2001
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for semiconductor devices
- Patent number 6,214,697
- Issue date Apr 10, 2001
- Micron Technology, Inc.
- John T. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for performing thermal reflow operations under...
- Patent number 6,174,761
- Issue date Jan 16, 2001
- Micron Technology, Inc.
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Trench isolation method
- Patent number 6,165,853
- Issue date Dec 26, 2000
- Micron Technology, Inc.
- Michael Nuttall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the morphology of deposited silicon on a sil...
- Patent number 6,143,631
- Issue date Nov 7, 2000
- Micron Technology, Inc.
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for performing thermal reflow operations under...
- Patent number 6,096,998
- Issue date Aug 1, 2000
- Micron Technology, Inc.
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Grant
Method for removing undesirable second oxide while minimally affect...
- Patent number 6,096,660
- Issue date Aug 1, 2000
- Micron Technology, Inc.
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned isolation trench
- Patent number 6,097,076
- Issue date Aug 1, 2000
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming oxide using high pressure
- Patent number 6,066,576
- Issue date May 23, 2000
- Micron Technology, Inc.
- Randhir P. S. Thakur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation for semiconductor devices
- Patent number 6,051,480
- Issue date Apr 18, 2000
- Micron Technology, Inc.
- John T. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned isolation trench
- Patent number 5,953,621
- Issue date Sep 14, 1999
- Micron Technology Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for in-situ incorporation of desirable impurities into high...
- Patent number 5,846,888
- Issue date Dec 8, 1998
- Micron Technology, Inc.
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Devices Including a Layer of Polycrystalline Silicon...
- Publication number 20130001692
- Publication date Jan 3, 2013
- Micron Technology, Inc.
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SELF-ALIGNED ISOLATION STRUCTURE UTILIZING SID...
- Publication number 20120208345
- Publication date Aug 16, 2012
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SELF ALIGNED ISOLATION TRENCH
- Publication number 20100273309
- Publication date Oct 28, 2010
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for stabilizing high pressure oxidation of a semiconductor d...
- Publication number 20060035473
- Publication date Feb 16, 2006
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for stabilizing high pressure oxidation of a semiconductor d...
- Publication number 20050279283
- Publication date Dec 22, 2005
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for stabilizing high pressure oxidation of a semiconducto...
- Publication number 20050028936
- Publication date Feb 10, 2005
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for stabilizing high pressure oxidation of a semiconductor d...
- Publication number 20040185677
- Publication date Sep 23, 2004
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Application
System for performing thermal reflow operations under high gravity...
- Publication number 20030192870
- Publication date Oct 16, 2003
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Application
INTEGRATED CIRCUIT FORMED BY REMOVING UNDESRABLE SECOND OXIDE WHILE...
- Publication number 20030057514
- Publication date Mar 27, 2003
- David L. Chapek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for stabilizing high pressure oxidation of a s...
- Publication number 20020192978
- Publication date Dec 19, 2002
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for performing thermal reflow operations under...
- Publication number 20020108941
- Publication date Aug 15, 2002
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Application
Method and apparatus for performing thermal reflow operations under...
- Publication number 20010052514
- Publication date Dec 20, 2001
- Karl M. Robinson
- F27 - FURNACES KILNS OVENS RETORTS
Information Patent Application
METHOD FOR FORMING A SELF-ALIGNED ISOLATION TRENCH
- Publication number 20010046753
- Publication date Nov 29, 2001
- FERNANDO GONZALEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for stabilizing high pressure oxidation of a s...
- Publication number 20010044219
- Publication date Nov 22, 2001
- F. Daniel Gealy
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for stabilizing high pressure oxidation of a s...
- Publication number 20010008750
- Publication date Jul 19, 2001
- Daniel Gealy
- C30 - CRYSTAL GROWTH

Dave Chapek

Person

Patents Grantslast 30 patents

Semiconductor devices including a layer of polycrystalline silicon...

Method for forming a self-aligned isolation structure utilizing sid...

Method for forming a self-aligned T-shaped isolation trench

Method for stabilizing high pressure oxidation of a semiconductor d...

Apparatus for stabilizing high pressure oxidation of a semiconducto...

Apparatus for stabilizing high pressure oxidation of a semiconducto...

Trench isolation for semiconductor devices

Method for stabilizing high pressure oxidation of a semiconductor d...

Integrated circuit formed by removing undesirable second oxide whil...

Apparatus for stabilizing high pressure oxidation of a semiconducto...

System for performing thermal reflow operations under high gravity...

Method for stabilizing high pressure oxidation of a semiconductor d...

Systems for performing thermal reflow operations under high gravity...

Method and apparatus for stabilizing high pressure oxidation of a s...

Method and apparatus for performing thermal reflow operations under...

Semiconductor processing methods, methods of forming silicon dioxid...

Method and apparatus for stabilizing high pressure oxidation of a s...

Method and apparatus for performing thermal reflow operations under...

Method for forming oxide using high pressure

Trench isolation for semiconductor devices

Method and apparatus for performing thermal reflow operations under...

Trench isolation method

Method for controlling the morphology of deposited silicon on a sil...

Method and apparatus for performing thermal reflow operations under...

Method for removing undesirable second oxide while minimally affect...

Self-aligned isolation trench

Method for forming oxide using high pressure

Trench isolation for semiconductor devices

Method for forming a self-aligned isolation trench

Method for in-situ incorporation of desirable impurities into high...

Patents Applicationslast 30 patents

Semiconductor Devices Including a Layer of Polycrystalline Silicon...

METHOD FOR FORMING A SELF-ALIGNED ISOLATION STRUCTURE UTILIZING SID...

METHOD FOR FORMING A SELF ALIGNED ISOLATION TRENCH

Method for stabilizing high pressure oxidation of a semiconductor d...

Method for stabilizing high pressure oxidation of a semiconductor d...

Apparatus for stabilizing high pressure oxidation of a semiconducto...

Method for stabilizing high pressure oxidation of a semiconductor d...

System for performing thermal reflow operations under high gravity...

INTEGRATED CIRCUIT FORMED BY REMOVING UNDESRABLE SECOND OXIDE WHILE...

Method and apparatus for stabilizing high pressure oxidation of a s...

Method and apparatus for performing thermal reflow operations under...

Method and apparatus for performing thermal reflow operations under...

METHOD FOR FORMING A SELF-ALIGNED ISOLATION TRENCH

Method and apparatus for stabilizing high pressure oxidation of a s...

Method and apparatus for stabilizing high pressure oxidation of a s...